Preliminary PTMA180152M
Wideband RF LDMOS Integrated Power Amplifier
15 W, 1800 – 2000 MHz
Description
The PTMA180152M is a wideband, matched, 15-watt, 2-stage
LDMOS integrated amplifier intended for wideband driver
applications in the 1800 to 2000 MHz band. This device is offered in
a 20-lead thermally-enhanced overmolded package for cool and
reliable operation.
PTMA180152M*
Package DSO-20-63
Features
•
Designed for wide RF bandwidth and low memory
effects
Broadband on-chip matching, 50-ohm input and
>10-ohm output
Typical GSM/EDGE performance at 1805 – 1880
MHz, 28 V, 7 W
- Gain = 30 dB
- Efficiency = 30 %
- EVM @ 2 W = 1.5%
- ACPR at 400 KHz = –63 dBc
- ACPR at 600 KHz = –70 dBc
Typical CW performance, 1800 MHz, 28 V
- Output power at P–1dB > 20 W
- Efficiency > 49%
Integrated ESD protection: Meets HBM Class 1B
(minimum), per JESD22-A114F
Capable of handling 3:1 VSWR @ 28 V,
15 W (CW) output power
Thermally-enhanced RoHS-compliant package
Broadband Performance
V
DD
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 120 mA
ƒ = 1805 - 1880 MHz
32
30
28
26
24
22
20
18
16
14
12
10
1700
1750
1800
1850
1900
1950
20
•
•
Gain
15
10
0
-5
-10
-15
Return Loss (dB)
5
Gain (dB)
•
Return Loss
-20
-25
-30
-35
2000
•
•
•
Frequency (MHz)
RF Characteristics
GSM/EDGE Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DS
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 150 mA, ƒ = 1805 – 1880 MHz, P
OUT
= 7 W average
Characteristic
Gain
Power Added Efficiency
Input Return Loss
Error Vector Magnitude
Adjacent Channel Power Ratio
P
OUT
Conditions
Symbol
G
ps
Min
—
—
—
—
—
—
Typ
30
30
—
1.5
–63
–70
Max
—
—
–10
—
—
—
Unit
dB
%
dB
%
dBc
dBc
η
IRL
EVM (RMS)
ACPR1
ACPR2
table continued next page
All published data at T
CASE
= 25°C unless otherwise indicated
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Preliminary Data Sheet
1 of 5
Rev. 01, 2009-03-03
*See Infineon distributor for future availability.
Preliminary PTMA180152M
RF Characteristics
(cont.)
GSM/EDGE Measurements
(cont.)
V
DS
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 150 mA, ƒ = 1805 – 1880 MHz, P
OUT
= 7 W average
Characteristic
Intermodulation Distortion
Spurs Load 3:1
Gain Flatness
Symbol
IMD3
—
∆G
Min
—
—
—
Typ
–37
–60
0.2
Max
—
—
—
Unit
dBc
dBc
dB
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Conditions
V
GS
= 0 V, I
DS
= 10 mA
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
Symbol
V
(BR)DSS
I
DSS
I
DSS
R
DS(on)
R
DS(on)
V
GS
I
GSS
Min
65
—
—
—
—
2
—
Typ
—
—
—
0.6
3.5
2.5
—
Max
—
1.0
10.0
—
—
3
1.0
Unit
V
µA
µA
Ω
Ω
V
µA
On-State Resistance
Stage 1
Stage 2
V
GS
= 10 V, V
DS
= 0.1 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V,
I
DQ
= CCC mA
V
GS
= 10 V, V
DS
= 0 V
Operating Gate Voltage
Gate Leakage Current
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Input Power
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (T
CASE
= 70°C, 15 W CW)
Stage 1
Stage 2
T
STG
R
θJC
R
θJC
Symbol
V
DSS
V
GS
T
J
P
IN
P
D
Value
65
–0.5 to +12
200
15
91
0.52
–40 to +150
TBD
TBD
Unit
V
V
°C
W
W
W/°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PTMA180152M V1
Preliminary Data Sheet
Package Outline
PG-DSO-20-63
Package Description
Thermally-enhanced surface-mount
2 of 5
Shipping
Tape
Marking
PTMA180152M
Rev. 01, 2009-03-03
Preliminary PTMA180152M
Typical Performance
(data taken in a production test fixture)
CW Performance
V
DD
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 120 mA
ƒ = 1805, 1830, 1880 MHz
32
30
28
26
65
50
Two-tone Drive-up
V
DD
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 120 mA
ƒ = 1805, 1830, 1880 MHz
-10
1805 MHz
1830 MHz
1880 MHz
Power Added Efficiency(%)
Power Added Efficiency (%)
Gain
1805 MHz
1830 MHz
1880 MHz
60
55
50
45
40
35
30
25
20
15
10
35
37
39
41
43
45
45
40
35
30
25
20
15
10
5
0
29
31
Efficiency
-15
-20
-30
-35
-40
-45
-50
-55
-60
-25
Gain (dB)
24
22
20
18
16
14
12
10
29
31
IMD3
Efficiency
33
33
35
37
39
41
43
Output Power (dBm)
Output Power, avg. (dBm)
Edge Modulation Spectrum Performance
V
DD
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 150 mA,
series are at selected frequencies
50
-35
Edge - EVM
V
DD
= 28 V, I
DQ1
= 70 mA, I
DQ2
= 150 mA,
series are at selected frequencies
50
10
1805.2 MHz
1836.6 MHz
1879.8 MHz
Power Added Efficiency (%)
Modulation Spectrum (dBc)
Power Added Efficiency (%)
40
35
30
25
20
15
10
5
0
1805.2 MHz
1836.6 MHz
1879.8 MHz
Efficiency
-45
-50
-55
-60
-65
-70
-75
40
35
30
25
20
15
10
5
0
Efficiency
8
7
6
5
4
3
2
1
0
400 kHz
EVM
600 kHz
30 31 32 33 34 35 36 37 38 39 40 41 42
-80
-85
30 31 32 33 34 35 36 37 38 39 40 41 42
Output Power (dBm)
Output Power (dBm)
*See Infineon distributor for future availability.
Preliminary Data Sheet
3 of 5
Rev. 01, 2009-03-03
Error Vector Magnitude (%)
45
-40
45
9
IMD3 (dBc)
Preliminary PTMA180152M
Package Outline Specifications
Package PG-DSO-20-63 Outline
6.
INDEX PIN 1
13.00
[0.512] MAX
10
1
2X 2.90
[0.114] MAX
(2 PLS)
14.20±0.30
11.00
[0.433]
2.95
[0.116]
6.00
6.
[0.236]
11
C66065-A0003-C643-01-0006 PG-DSO-20-63.dwg
20
BOTTOM VIEW
1.10
[0.043] MAX
(2 PLS)
4.
14°±1° (2 PLS)
TOP/BOTTOM
ALL SIDES
3.50
[0.137] MAX
11.00±0.10
[0.433±0.004]
SEE DETAIL A
9 X 1.27 = 11.43
9 X .050 = .450
TOP VIEW
1.27
[0.050]
15.90±0.10
[0.626±0.004]
0.40+0.13
[0.015+0.005]
5.
0.25mm
C A
B
END VIEW
SIDE VIEW
GAUGE PLANE
0.15
[0.006] REF
0.25+0.07
-0.02
+0.003
0.010-0.001
[
0+0.1
[0.004]
STANDOFF
0.95±0.15
[0.037±0.006]
1.60
[0.063] REF
]
DETAIL A
Notes: Unless otherwise specified
1.
2.
3.
4.
5.
6.
Interpret dimensions and tolerances per ASME Y14.5M-1994.
Package dimensions: 11.0 mm by 15.9 mm by 3.35 mm.
JEDEC drawing number: MO-166.
Does not include plastic or metal protrusion of 0.15 mm max per side.
Does not include dambar protrusion; maximum allowable dambar protrusion shall be
0.08 mm.
Bottom metallization.
Preliminary Data Sheet
4 of 5
Rev. 01, 2009-03-03
PTMA180152M
Confidential, Limited Internal Distribution
Revision History:
2009-03-03
Previous Version:
Page
None
Subjects (major changes since last revision)
Preliminary Data Sheet
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
To request other information, contact us at:
+1 877 465 3667 (1-877-GO-LDMOS) USA
or +1 408 776 0600 International
GOLDMOS
®
is a registered trademark of Infineon Technologies AG.
Edition 2009-03-03
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of
any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com/rfpower).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Preliminary Data Sheet
5 of 5
Rev. 01, 2009-03-03
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