CMPT6517 NPN
CMPT6520 PNP
w w w. c e n t r a l s e m i . c o m
SURFACE MOUNT
COMPLEMENTARY HIGH VOLTAGE
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT6517 and
CMPT6520 are complementary silicon transistors
manufactured by the epitaxial planar process, epoxy
molded in a surface mount package, designed for high
voltage driver and amplifier applications.
MARKING CODES: CMPT6517: C1Z
CMPT6520: C2Z
SOT-23 CASE
MAXIMUM RATINGS:
(TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Continuous Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PD
TJ, Tstg
Θ
JA
UNITS
V
V
V
mA
mA
mW
°C
°C/W
350
350
5.0
500
250
350
-65 to +150
357
ELECTRICAL CHARACTERISTICS:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=250V
IEBO
IEBO
BVCBO
BVCEO
BVEBO
BVEBO
VCE(SAT)
VCE(SAT)
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
VEB=5.0V (CMPT6517)
VEB=4.0V (CMPT6520)
IC=100µA
IC=1.0mA
IE=10µA (CMPT6517)
IE=10µA (CMPT6520)
IC=10mA,
IC=20mA,
IC=30mA,
IC=50mA,
IC=10mA,
IC=20mA,
IB=1.0mA
IB=2.0mA
IB=3.0mA
IB=5.0mA
IB=1.0mA
IB=2.0mA
MAX
50
50
50
UNITS
nA
nA
nA
V
V
V
V
350
350
6.0
5.0
0.30
0.35
0.50
1.0
0.75
0.85
0.90
2.0
20
30
V
V
V
V
V
V
V
V
IC=30mA, IB=3.0mA
IC=10V, IC=100mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
R5 (1-February 2010)
CMPT6517 NPN
CMPT6520 PNP
SURFACE MOUNT
COMPLEMENTARY HIGH VOLTAGE
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS - Continued:
(TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
MAX
hFE
VCE=10V, IC=30mA
30
200
hFE
VCE=10V, IC=50mA
20
200
hFE
VCE=10V, IC=100mA
15
fT
VCE=20V, IC=10mA, f=20MHz
40
200
Ccb
VCE=20V, IC=0, f=1.0MHz
6.0
Ceb
VEB=0.5V, IE=0, f=1.0MHz (CMPT6517)
80
Ceb
VEB=0.5V, IE=0, f=1.0MHz (CMPT6520)
100
UNITS
MHz
pF
pF
pF
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODES:
CMPT6517: C1Z
CMPT6520: C2Z
R5 (1-February 2010)
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REQUESTING PRODUCT PLATING
1.
2.
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