STx6NM60N
N-channel 600 V, 0.85
Ω,
4.6 A MDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK, D
2
PAK
Features
Type
STB6NM60N
STD6NM60N
STD6NM60N-1
STF6NM60N
STP6NM60N
V
DSS
(@Tjmax)
650 V
650 V
650 V
650 V
650 V
R
DS(on)
max
< 0.92
Ω
< 0.92
Ω
< 0.92
Ω
< 0.92
Ω
< 0.92
Ω
I
D
4.6 A
4.6 A
4.6 A
4.6 A
(1)
4.6 A
1
3
3
1
2
TO-220
1. Limited only by maximum temperature allowed
■
■
■
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
DPAK
Application
■
Switching applications
Description
bs
O
This series of devices implements second
generation MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the STMicroelectronics’ strip
layout to yield one of the world’s lowest on-
resistance and gate charge. It is therefore suitable
for the most demanding high-efficiency
converters.
et
l
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ro
P
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uc
d
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t(
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-
Figure 1.
so
b
te
le
r
P
D²PAK
d
o
1
3
ct
u
TO-220FP
s)
(
3
1
2
3
2
1
IPAK
Internal schematic diagram
Table 1.
Device summary
Marking
B6NM60N
D6NM60N
D6NM60N
F6NM60N
P6NM60N
Package
D²PAK
IPAK
DPAK
TO-220FP
TO-220
Packaging
Tape and reel
Tube
Tape and reel
Tube
Tube
Order codes
STB6NM60N
STD6NM60N-1
STD6NM60N
STF6NM60N
STP6NM60N
January 2009
Rev 3
1/19
www.st.com
19
Contents
STx6NM60N
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................. 6
3
4
5
6
Test circuit
................................................ 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
bs
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et
l
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P
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t(
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so
b
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t(
2/19
STx6NM60N
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
Parameter
TO-220, D²PAK,
DPAK, IPAK
600
± 25
4.6
2.9
18.4
45
4.6
(1)
2.9
(1)
Unit
TO-220FP
V
V
V
DS
V
GS
I
D
I
D
I
DM (2)
P
TOT
Drain-source voltage (V
GS
=0)
Gate-source voltage
Drain current (continuous) at
T
C
= 25 °C
Drain current (continuous) at
T
C
= 100 °C
Drain current (pulsed)
Total dissipation at T
C
= 25 °C
dv/dt
(3)
Peak diode recovery voltage slope
V
ISO
T
j
T
stg
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t=1 s;T
C
=25 °C)
Operating junction temperature
Storage temperature
1. Limited by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
SD
≤
4.6A, di/dt
≤
400A/µs, V
DD
= 80% V
(BR)DSS
Table 3.
O
bs
et
l
o
Symbol
ro
P
e
T
l
Thermal data
Value
Parameter
TO-220 IPAK DPAK
2.78
62.5
100
300
62.5
D²PA
K
TO-
220FP
5
Unit
uc
d
s)
t(
O
-
s
b
te
le
o
15
r
P
d
o
18.4
(1)
20
ct
u
s)
(
A
A
A
W
V/ns
2500
V
-55 to 150
°C
Rthj-case Thermal resistance junction-case
Rthj-amb Thermal resistance junction-amb
Maximum lead temperature for
soldering purpose
°C/W
°C/W
°C
Table 4.
Symbol
I
AS
E
AS
Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tj max)
Single pulse avalanche energy
(starting Tj=25°C, I
D
=I
AS
, V
DD
= 50 V)
Value
2
65
Unit
A
mJ
3/19
Electrical characteristics
STx6NM60N
2
Electrical characteristics
(T
CASE
= 25 °C unless otherwise specified)
Table 5.
Symbol
V
(BR)DSS
dv/dt
(1)
I
DSS
I
GSS
V
GS(th)
R
DS(on)
1.
On/off states
Parameter
Drain-source breakdown
voltage
Drain-source voltage slope
Zero gate voltage drain
current (V
GS
= 0)
Gate body leakage current
(V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 1 mA, V
GS
= 0
V
DD
= 400 V, V
GS
= 10 V,
I
D
= 4.6 A
V
DS
= Max rating,
V
DS
= Max rating @125 °C
V
GS
= ±20 V
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 2.3 A
Min
600
40
Typ
Max
Unit
V
V/ns
µA
µA
Characteristics value at turn off on inductive load
Table 6.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
O
bs
et
l
o
C
oss eq.
(2)
ro
P
e
Rg
Q
g
Q
gs
Q
gd
uc
d
s)
t(
O
-
so
b
te
le
ro
P
2
Min.
uc
d
3
0.85
s)
t(
1
100
4
0.92
±
100
nA
V
Ω
Test conditions
Typ.
4
420
30
4
70
Max.
Unit
S
pF
pF
pF
pF
V
DS
=15 V, I
D
= 2.3 A
V
DS
= 50 V, f=1 MHz,
V
GS
=0
V
GS
=0 , V
DS
=0 to 480 V
f=1 MHz Gate DC Bias=0
test signal level=20 mV
open drain
V
DD
=480 V, I
D
= 4.6 A
V
GS
=10 V
Figure 19
6
13
2
7
Ω
nC
nC
nC
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
4/19
STx6NM60N
Electrical characteristics
Table 7.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
V
DD
= 300 V, I
D
= 2.3 A,
R
G
= 4.7
Ω,
V
GS
= 10 V
Figure 18
Min.
Typ.
10
8
40
9
Max.
Unit
ns
ns
ns
ns
Table 8.
Symbol
I
SD
I
SDM(1)
V
SD(2)
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 4.6 A, V
GS
=0
I
SD
= 4.6 A,
di/dt = 100 A/µs,
V
DD
=20 V,
Figure 20
Test conditions
Min
Typ.
Max
4.6
Unit
A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
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)-
(s
t
b
O
I
SD
= 4.6 A,
di/dt = 100 A/µs,
V
DD
= 20 V, Tj= 150 °C
Figure 20
so
t
le
P
e
ro
du
300
2
12
470
3
12
ct
18.4
1.3
s)
(
A
V
ns
µC
A
ns
µC
A
5/19
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