IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
99
32
47
Single
D
FEATURES
600
0.35
• Smaller TO-220 Package
• Low Gate Charge Q
g
Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Available
RoHS*
COMPLIANT
• Fully Characterized Capacitance and Avalanche Voltage
and Current
• Lead (Pb)-free Available
TO-220
APPLICATIONS
• Switch Mode Power Supply (SMPS)
G
S
G
D
S
N-Channel
MOSFET
• Uninterruptible Power Supply
• High Speed Power Switching
• Hard Switched and High Frequency Circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220
IRFB17N60KPbF
SiHFB17N60K-E3
IRFB17N60K
SiHFB17N60K
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
for 10 s
6-32 or M3 screw
T
C
= 25 °C
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
600
± 30
17
11
68
2.7
330
17
34
340
11
- 55 to + 150
300
d
10
W/°C
mJ
A
mJ
W
V/ns
°C
N
A
UNIT
V
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting T
J
= 25 °C, L = 2.3 mH, R
G
= 25
Ω,
I
AS
= 17 A (see fig. 12).
c. I
SD
≤
17 A, dI/dt
≤
380 A/µs, V
DD
≤
V
DS
, T
J
≤
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
www.vishay.com
1
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
SYMBOL
R
thJA
R
thCS
R
thJC
TYP.
-
0.50
-
MAX.
58
-
0.37
°C/W
UNIT
SPECIFICATIONS
T
J
= 25 °C, unless otherwise noted
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Effective Output Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward Current
a
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
I
S
I
SM
V
SD
t
rr
Q
rr
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
DS
ΔV
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
V
GS
= 0 V, I
D
= 250 µA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= ± 30 V
V
DS
= 600 V, V
GS
= 0 V
V
DS
= 480 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
= 10 A
b
V
DS
= 50 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 0 V
V
DS
= 1.0 V , f = 1.0 MHz
V
DS
= 480 V , f = 1.0 MHz
V
DS
= 0 V to 480 V
I
D
= 17 A, V
DS
= 480 V
see fig. 6 and 13
600
-
3.0
-
-
-
-
5.9
-
600
-
-
-
-
0.35
-
-
-
5.0
± 100
50
250
0.42
-
V
mV/°C
V
nA
µA
Ω
S
C
iss
C
oss
C
rss
C
oss
C
oss
eff.
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 10 V
-
-
-
-
-
-
-
-
-
-
2700
240
21
2950
67
120
-
-
-
25
82
38
32
-
-
-
-
-
-
99
32
47
-
-
-
-
ns
nC
pF
V
DD
= 300 V, I
D
= 17 A,
R
G
= 7.5
Ω,
V
GS
= 10 V, see fig.
10
b
-
-
-
-
-
-
-
-
520
5620
580
6470
17
A
68
1.5
780
8430
870
9700
V
ns
nC
ns
nC
G
S
T
J
= 25 °C, I
S
= 17 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
T
J
= 125 °C, I
F
= 17 A, dI/dt = 100 A/µs
b
-
-
-
-
-
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating, pulse width limited by max. junction temperature.
b. Pulse width
≤
300 µs; duty cycle
≤
2 %.
www.vishay.com
2
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
www.vishay.com
3
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91099
S-81243-Rev. B, 21-Jul-08
IRFB17N60K, SiHFB17N60K
Vishay Siliconix
R
D
V
DS
V
GS
R
G
D.U.T.
+
-
V
DD
10
V
Pulse
width
≤
1
µs
Duty factor
≤
0.1
%
Fig. 10a - Switching Time Test Circuit
V
DS
90
%
10
%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
15
V
V
DS
t
p
V
DS
L
Driver
R
G
20
V
t
p
D.U.T
I
AS
0.01
Ω
+
A
-
V
DD
A
I
AS
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91099
S-81243-Rev. B, 21-Jul-08
Fig. 12b - Unclamped Inductive Waveforms
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