StrongIRFET™
IRFI7446GPbF
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
HEXFET
®
Power MOSFET
D
V
DSS
R
DS(on)
typ.
40V
2.6m
3.3m
80A
G
S
max
I
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-Free, RoHS compliant
G
Gate
G
S
D
TO-220AB Full-Pak
D
Drain
S
Source
Base part number
IRFI7446GPbF
Package Type
TO-220 Full-Pak
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
IRFI7446GPbF
RDS(on), Drain-to -Source On Resistance (m
)
10
9
8
7
6
5
4
3
2
1
4
6
8
10
12
14
16
18
20
T J = 25°C
T J = 125°C
ID, Drain Current (A)
100
ID = 48A
80
60
40
20
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
VGS, Gate -to -Source Voltage (V)
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Maximum Drain Current vs. Case Temperature
1
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Absolute Maximium Rating
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
IRFI7446GPbF
Max.
80
57
320
40.5
0.27
± 20
-55 to + 175
300
10 lbf·in (1.1 N·m)
233
319
See Fig. 15, 16, 23a, 23b
Units
A
W
W/°C
V
°C
Avalanche Characteristics
E
AS (Thermally limited)
Single Pulse Avalanche Energy
E
AS (tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
Repetitive Avalanche Energy
E
AR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
R
JC
Junction-to-Ambient
R
JA
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
I
GSS
R
G
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
40
–––
–––
2.2
–––
–––
–––
–––
–––
Typ. Max.
––– –––
38
2.6
3.0
–––
–––
–––
–––
1.3
–––
3.3
3.9
1.0
150
100
-100
–––
mJ
A
mJ
Units
°C/W
Typ.
–––
–––
Max.
3.7
65
Units
Conditions
V
V
GS
= 0V, I
D
= 250µA
mV/°C Reference to 25°C, I
D
= 1.0mA
m V
GS
= 10V, I
D
= 48A
V
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 40V, V
GS
= 0V
µA
V
DS
= 40V,V
GS
= 0V,T
J
=125°C
V
GS
= 20V
nA
V
GS
= -20V
Notes:
Repetitive
rating; pulse width limited by max. junction temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 270µH, R
G
= 50, I
AS
= 48A, V
GS
=10V.
I
SD
48A, di/dt
894A/µs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse
width
400µs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
R
is measured at T
J
approximately 90°C.
This value determined from sample failure population, starting T
J
=25°C, L = 270µH, R
G
= 50, I
AS
= 48A, V
GS
=10V.
2
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May 19, 2014
IRFI7446GPbF
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Output Capacitance (Time Related)
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery dv/dt
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Min.
139
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S V
DS
= 10V, I
D
=48A
60
90
I
D
= 48A
13
–––
V
DS
= 20V
nC
22
–––
V
GS
= 10V
38
–––
13
–––
V
DD
= 20V
I
D
= 48A
68
–––
ns
29
–––
R
G
= 2.7
V
GS
= 10V
26
–––
3199 –––
V
GS
= 0V
473 –––
V
DS
= 25V
320 –––
pF
ƒ = 1.0MHz, See Fig.7
561
679
–––
–––
V
GS
= 0V, V
DS
= 0V to 32V
V
GS
= 0V, V
DS
= 0V to 32V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss eff.(ER)
C
oss eff.(TR)
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
Diode Characteristics
Typ. Max. Units
–––
–––
–––
6.6
28
29
25
27
1.5
80
A
320
1.3
–––
–––
–––
–––
–––
–––
V
D
G
S
T
J
= 25°C,I
S
= 48A,V
GS
= 0V
V
DD
= 34V
I
F
= 48A,
di/dt = 100A/µs
V/ns T
J
= 175°C,I
S
=48A, V
DS
= 40V
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
nC
T
J
= 125°C
ns
A
T
J
= 25°C
3
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May 19, 2014
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
IRFI7446GPbF
1000
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
10
100
4.5V
1
4.5V
60µs PULSE WIDTH
Tj = 25°C
0.1
0.01
0.1
1
10
V DS, Drain-to-Source Voltage (V)
10
0.1
60µs PULSE WIDTH
Tj = 175°C
1
V DS, Drain-to-Source Voltage (V)
10
Fig 3.
Typical Output Characteristics
1000
Fig 4.
Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 48A
VGS = 10V
100
T J = 175°C
10
T J = 25°C
1
VDS = 10V
60µs PULSE WIDTH
0.1
2
3
4
5
6
7
8
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
Fig 5.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
Fig 6.
Normalized On-Resistance vs. Temperature
14
ID= 48A
VGS, Gate-to-Source Voltage (V)
12
10
8
6
4
2
0
VDS= 32V
VDS= 20V
C, Capacitance (pF)
VDS= 8.0V
10000
Ciss
Coss
Crss
1000
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 7.
Typical Capacitance vs. Drain-to-Source Voltage
4
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© 2014 International Rectifier
Fig 8.
Typical Gate Charge vs. Gate-to-Source Voltage
Submit Datasheet Feedback
May 19, 2014
1000
IRFI7446GPbF
100µsec
1msec
OPERATION
IN THIS AREA
LIMITED
BY RDS(on)
100
T J = 175°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10
T J = 25°C
10
10msec
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1
1
10
100
VGS = 0V
1.0
0.2
0.6
1.0
1.4
1.8
VSD , Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 9.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 10.
Maximum Safe Operating Area
0.4
50
Id = 1.0mA
0.4
0.3
48
46
Energy (µJ)
0.3
0.2
0.2
0.1
44
42
40
38
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0.1
0.0
-5
0
5
10
15
20
25
30
35
40
VDS, Drain-to-Source Voltage (V)
Fig 11.
Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance (
m)
Fig 12.
Typical C
oss
Stored Energy
20.0
17.5
15.0
12.5
10.0
7.5
5.0
2.5
0.0
0
100
200
300
400
ID, Drain Current (A)
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
Fig 13.
Typical On-Resistance vs. Drain Current
5
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May 19, 2014
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