Storage Temperature Range .............................-65°C to +160°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Electrical Characteristics
(V
BATT
= 15V,
T
A
= 0°C to +85°C,
unless otherwise noted. Typical values are at T
A
= +25°C.)
PARAMETER
BATT Operating Range
BATT Shutdown Current
I
SHDN
SYMBOL
CONDITIONS
V
GATE
- V
SRC
> 3V, SRC = BATT
V
BATT
= 26V,
ON
=
OFF
= unconnected,
I
GATE
= 0A, device latched off, V
LBI
= 1.5V
V
BATT
= 15V,
ON
=
OFF
= unconnected,
I
GATE
= 0A, device latched on, V
LBI
= 1.5V,
SRC = BATT
V
BATT
= 26V,
ON
=
OFF
= unconnected,
I
GATE
= 0A, device latched on, V
LBI
= 1.5V,
SRC = BATT
Measured from GATE to SRC, V
BATT
= 15V,
I
GATE
= 0A
Measured from GATE to SRC, V
BATT
= V
SRC
= 5V, I
GATE
= 1.5μA
V
GATE
= V
SRC
= 15V
V
GATE
= 4V, device latched off
V
TH
LBI input falling
Tested at V
LBI
= V
BATT
/4
I
LBI
V
OL
V
OH
V
LBI
= 1.3V
I
SINK
= 1mA
V
LBO
= 11.5V
Tested at 2V
Tested at 0.6V
V
IL
V
IH
t
PW
V
BATT
= 5V
V
BATT
= 26V
V
BATT
= 5V
2.0
0.5
1.0
0.5
1.5
2
0.6
MIN
5
4
17
TYP
MAX
26
7
30
µA
21
40
UNITS
V
µA
Quiescent Current
I
BATT
+
I
SRC
INTERNAL CHARGE PUMP
6.5
3
15
0.5
1.182
1.20
0.02V
TH
0.9
4
10
0.4
0.5
60
2
1.218
µA
mA
V
V
V
nA
V
µA
µA
µA
V
V
μs
8
9.0
V
GATE-Drive Voltage
V
GS
GATE-Drive Output Current
GATE-Discharge Current
LOW-BATTERY COMPARATOR
LBI Trip Level
LBI Trip Hysteresis
Minimum V
BATT
for Valid
LBO
LBI Input Current
LBO
Low Voltage
LBO
High Leakage
CONTROL INPUTS (ON,
OFF)
Minimum Input Pullup Current
Maximum Input Pullup Current
Input Low Voltage
Input High Voltage
Minimum Input Pulse Width
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Maxim Integrated
│
2
MAX1614
High-Side, n-Channel MOSFET
Switch Driver
Electrical Characteristics
(V
BATT
= 15V,
T
A
= -40°C to +85°C,
unless otherwise noted. (Note 1)
PARAMETER
BATT Operating Range
BATT Shutdown Current
Quiescent Current
INTERNAL CHARGE PUMP
Measured from GATE to SRC, V
BATT
= 15V,
I
GATE
= 0A
Measured from GATE to SRC, V
BATT
= 5.25V,
I
GATE
= 1.5μA, V
SRC
= 5.25V
V
GATE
= V
SRC
= 15V
V
TH
LBI input falling
6.5
3
15
1.176
1.20
60
1.224
µA
V
9.0
V
I
SHDN
I
BATT
+
I
SAC
SYMBOL
CONDITIONS
V
GATE
- V
SRC
> 3V, SRC = BATT
V
BATT
= 26V,
ON
=
OFF
= unconnected,
I
GATE
= 0A, device latched off, V
LBI
= 1.5V
V
BATT
= 26V,
ON
=
OFF
= unconnected,
I
GATE
= 0A, device latched on, V
LBI
= 1.5V
MIN
5.0
TYP
MAX
26
8
40
UNITS
V
µA
µA
GATE-Drive Voltage
V
GS
GATE-Drive Output Current
LOW-BATTERY COMPARATOR
LBI Trip Level
Note 1:
Specifications to T
A
= -40°C are guaranteed by design and not production tested.
Typical Operating Characteristics
(T
A
= +25°C, unless otherwise noted.)
MAX1614 toc01
MAX1614 toc02
20
SUPPLY CURRENT (µA)
18
16
14
12
10
8
6
5
10
15
SHUTDOWN CURRENT (µA)
T
A
= +85°C
T
A
= +25°C
T
A
= -40°C
3.5
3.0
2.5
2.0
1.5
1.0
T
A
= +25°C
T
A
= -40°C
1.28
LBI THRESHOLD (V)
1.26
1.24
1.22
1.20
1.18
V
BATT
= 15V
V
LBI
RISING
V
LBI
FALLING
20
25
30
5
10
15
20
25
30
1.16
-40
-20
0
20
40
60
80
100
VBATT (V)
VBATT (V)
TEMPERATURE (°C)
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Maxim Integrated
│
3
MAX1614 toc03
22
ON SUPPLY CURRENT
vs. V
BATT
4.0
OFF SUPPLY CURRENT
vs. V
BATT
T
A
= +85°C
1.30
LOW-BATTERY THRESHOLD
vs. TEMPERATURE
MAX1614
High-Side, n-Channel MOSFET
Switch Driver
Typical Operating Characteristics (continued)
(T
A
= +25°C, unless otherwise noted.)
MAX1614 toc04
MAX1614 toc03
GATE-DISCHARGE CURRENT (mA)
GATE-CHARGING CURRENT (µA)
GATE-CHARGING CURRENT (µA)
2.0
1.5
1.0
0.5
0
-0.5
T
A
= -40°C
T
A
= +25°C
T
A
= +85°C
33
32
31
30
29
28
27
26
-40
V
BATT
= 15V
29
28
27
26
25
24
23
22
5
10
15
20
T
A
= +85°C
T
A
= -40°C
0
2
4
6
8
10 12 14 16 18 20
-20
0
20
40
60
80
100
V
GATE
(V)
25
30
TEMPERATURE (°C)
V
BATT
(V)
GATE AND SOURCE TRANSITIONS
FOR TYPICAL MOSFET LOAD
V
SRC
V
SRC
MAX1614 toc07
GATE AND SOURCE TRANSITIONS
FOR TYPICAL MOSFET LOAD
Si9936 MOSFETS
I
LOAD
= 1A
ON
= GND
V
GATE
V
SRC
MAX1614 toc08
Si9936 MOSFETS
I
LOAD
= 1A
Ciss = 400pF
ON
= GND
5V/div
5V/div
0V
V
OFF
V
OFF
10ms/div
0V
10µs/div
GATE TURN-OFF TRANSITION
FOR TYPICAL MOSFET LOAD
MAX1614 toc09
V
GATE
V
SRC
5V/div
Si9936 MOSFETS
I
LOAD
= 1A
Ciss = 400pF
ON
= GND
V
OFF
20µs/div
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Maxim Integrated
│
4
MAX1614 toc06
2.5
GATE-DISCHARGE CURRENT
vs. GATE VOLTAGE
34
GATE-CHARGING CURRENT
vs. TEMPERATURE
30
GATE-CHARGING CURRENT
vs. BATT VOLTAGE
MAX1614
High-Side, n-Channel MOSFET
Switch Driver
Pin Description
PIN
1
2
3
4
5
6
7
8
NAME
ON
OFF
LBO
LBI
GND
GATE
SRC
BATT
FUNCTION
SET
Input to the On/Off Latch. Pulse
ON
low with
OFF
high to turn on the external MOSFET switch.
When
both
ON
and
OFF
are low, the part is off.
RESET
Input to the On/Off Latch. Pulse
OFF
low with
ON
high to turn off the external MOSFET switch.
When
both
ON
and
OFF
are low, the part is off.
Open-Drain, Low-Battery Comparator Output.
LBO
is low when V
LBI
is below the trip point.
Low-Battery Comparator Input.
LBO
goes low when V
LBI
falls below 1.20V (typ). Connect a voltage-divider
between BATT, LBI, and GND to set the battery undervoltage trip threshold (see
Typical Operating Circuit).
System Ground
Gate-Drive Output. Connect to the gates of external, n-channel MOSFETs.
When the
MAX1614 is off, GATE
actively pulls to GND.
Source Input. Connect to the sources of external, n-channel MOSFETs.
When the
MAX1614 is off, SRC
actively pulls to GND.
Battery Input. Connect to a battery voltage between 5V and 26V.
Detailed Description
The MAX1614 uses an internal, monolithic charge pump
and low-dropout linear regulator to supply the required
8V V
GS
voltage to fully enhance an n-channel MOSFET
high-side switch (Figure 1). The charge pump typically
supplies 30μA, charging 800pF of gate capacitance in
400μs (V
BATT
= 15V). For slower turn-on times, simply
add a small capacitor between the GATE and SRC pins.
When turned off, GATE and SRC pull low and typically
discharge an 800pF gate capacitance in 80μs.
The MAX1614 provides separate on/off control inputs (ON
and
OFF). ON
and
OFF
connect, respectively, to the
SET
and
RESET
inputs of an internal flip-flop. When
ON
is
pulsed low (with
OFF
= high), the internal charge pump
turns on, and GATE is pumped to 8V above SRC, turning
on the external MOSFETs. The charge pump maintains
gate drive to the external MOSFETs until
OFF
is pulsed low.
When this happens, the internal charge pump turns off, and
GATE discharges to ground through an internal switch. For
slower turn-on times, simply add a small capacitor.
3V or 5V) poses no problem if the gate outputs driving
these pins can sink at least 2μA while high.
Although the MAX1614 shutdown function was designed
to operate with a single pushbutton on/off switch, it can
also be driven by a single gate. Connect
ON
to GND and
drive
OFF
directly (Figure 2).
Maximum Switching Rate
The MAX1614 is not intended for fast switching applica-
tions. In fact, it is specifically designed to limit the rate of
change of the load current, ΔI/Δt. The maximum switching
rate is limited by the turn-on time, which is a function of
the charge-pump output current and the total capacitance
on GATE (C
GATE
). Calculate the turn-on time as a func-
tion of external MOSFET gate capacitance using the
Gate Charging Current vs. V
BATT
graph in the
Typical
Operating Characteristics.
Since turn-off time is small
compared to turn-on time, the maximum switching rate is
approximately 1/t
ON
.
Adding Gate Capacitance
Applications Information
Connecting
ON/OFF
to 3V or 5V Logic
ON
and
OFF
internally connect to 2μA max pullup current
sources (Figure 1). The open-circuit voltage for
ON
and
OFF
ranges from 7V to 10.5V (nominally 8.5V). Since the
current sources are relatively weak, connecting
ON
and
OFF
directly to logic powered from lower voltages (e.g.,
The charge pump uses an internal monolithic trans-
fer capacitor to charge the external MOSFET gates.
Normally, the external MOSFET’s gate capacitance is suf-
ficient to serve as a reservoir capacitor. If the MOSFETs
are located at a significant distance from the MAX1614,
place a local bypass capacitor (100pF typ) across the
GATE and SRC pins. For slower turn-on times, simply
射频识别(Radio Frequency Identification，RFID)技术是一种利用无线射频通信实现的非接触式自动识别技术，与目前广泛采用的条形码技术相比，RFID具有容量大、识别距离远、穿透能力强、抗污性强等特点。RFID技术已经发展得比较成熟并获得了大规模商用，但超高频RFID技术相对滞后。本文分析了射频芯片nRF9E5的功能特性，并将其用于RFID系统中，设计了一套有源超高频(...[详细]
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