VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
Standard Recovery Diodes,
(Stud Version), 600 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC
®
types
• Compression bonded encapsulations
B-8
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
Package
Circuit configuration
600 A
B-8
Single
• Converters
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
V
RRM
T
J
50 Hz
60 Hz
50 Hz
60 Hz
Range
TEST CONDITIONS
SD600N/R
04 to 20
600
T
C
92
940
13 000
13 600
845
772
400 to 2000
-40 to +180
22 to 32
600
54
940
10 500
11 000
551
503
2200 to 3200
-40 to +150
kA
2
s
V
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
12
VS-SD600N/R
16
20
22
28
32
V
RRM
, MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1600
2000
2200
2800
3200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1700
2100
2300
2900
3300
35
I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
Revision: 11-Jan-18
Document Number: 93551
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
SD600N/R
04 to 20
600
92
570
100
940
13 000
13 600
10 900
Sinusoidal half wave,
initial T
J
= T
J
maximum
11 450
845
772
598
546
8450
0.78
0.87
0.35
0.31
1.31
10 500
11 000
8830
9250
551
503
390
356
5510
0.84
0.88
0.40
mW
0.38
1.44
V
kA
2
s
V
kA
2
s
A
22 to 32
54
375
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
UNITS
A
°C
A
°C
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
I
F(AV)
180° conduction, half sine wave
I
F(RMS)
DC at T
C
= 75 °C (04 to 20), T
C
= 36 °C (25 to 32)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
I
FSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
F(TO)1
V
F(TO)2
r
f1
r
f2
V
FM
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
F(AV)
< I <
x I
F(AV)
),
T
J
= T
J
maximum
(I >
x I
F(AV)
), T
J
= T
J
maximum
I
pk
= 1500 A, T
J
= T
J
maximum,
t
p
= 10 ms sinusoidal wave
Low level value of threshold voltage
High level value of threshold voltage
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
Approximate weight
Case style
See dimensions (link at the end of datasheet)
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
Not-lubricated threads
TEST CONDITIONS
SD600N/R
04 to 20
-40 to 180
22 to 32
-40 to 150
UNITS
°C
-55 to 200
0.1
K/W
0.04
50
454
B-8
Nm
g
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.012
0.014
0.017
0.025
0.042
RECTANGULAR CONDUCTION
0.008
0.014
0.019
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 11-Jan-18
Document Number: 93551
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
150
140
130
120
110
100
90
80
70
60
50
0
100
200
300 400
500
600
700
Average Forward Current (A)
30°
60°
90°
120°
180°
Conduction Angle
Maximum Allowable Case Temperature (°C)
180
170
160
150
140
130
120
110
100
90
80
0
100
200
300 400
500
600
700
Average Forward Current (A)
30°
60°
90°
Conduction Angle
S
D600N/ R S
eries (400V to 2000V)
R
thJC
(DC) = 0.1 K/ W
S
D600N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.1 K/ W
120°
180°
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Cas T
e emperature (°C)
Maximum Allowable Case T
emperature (°C)
Fig. 3 - Current Ratings Characteristics
150
140
130
120
110
100
90
80
70
60
50
40
30
0
200
400
600
30°
60°
90°
120°
180°
DC
800
1000
Conduction Period
180
170
160
150
140
130
120
110
100
90
80
70
0
200
400
600
30°
60°
90°
120°
180°
DC
800
1000
Conduction Period
S
D600N/ R S
eries (400V to 2000V)
R
thJC
(DC) = 0.1 K/ W
S
D600N/ R S
eries (2500V to 3200V)
R
thJC
(DC) = 0.1 K/ W
Average Forward Current (A)
Average Forward Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Average Forward Power Loss (W)
800
R
t
Fig. 4 - Current Ratings Characteristics
04
0.
A
hS
700
600
500
400
300
200
100
0
0
180°
120°
90°
60°
30°
0.
08
W
K/
=
K/
W
02
0.
W
K/
0.
1
K/
W
ta
el
-D
R Limit
MS
R
0.2
K/
W
0.4
K/ W
Conduc tion Angle
0.6
K/ W
S
D600N/ R S
eries
(400V to 2000V)
T
J
= 180°C
100
200
300
400
500
1 K/ W
1.8 K/W
20
600 40
60
80 100 120 140 160 180
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 5 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93551
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
Maximum Average F
orward Power L (W)
oss
1100
1000
900
800
700
600
500 RMS Limit
400
300
200
100
0
Conduction Period
DC
180°
120°
90°
60°
30°
R
0.
04
0.
08
0.1
K/
W
0.2
K/
W
S
D600N/ R S
eries
(400V to 2000V)
T
J
= 180°C
0
200
400
600
800
0.4
K/
0.6 K
/
W
1 K/ W
1.8 K/ W
20
1000 40
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 6 - Forward Power Loss Characteristics
Maximum Average Forward Power Loss (W)
900
800
700
600
500
400
180°
120°
90°
60°
30°
RMS Limit
R
=
0.
0.
04
02
K/
K/
W
0.
W
06
-D
K/
el
W
ta
R
0.1
K/
W
SA
th
0.2
th
SA
=
K/
W
K/
W
0.
02
K/
W
-D
el
ta
R
W
60
80 100 120 140 160 180
K/ W
300
200
100
Conduction Angle
0.4 K
/
W
S
D600N/ R S
eries
(2500V to 3200V)
T = 150°C
J
1 K/ W
0
0
100
200
300
400
500
25
600
50
75
100
125
150
Average Forward Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 7 - Forward Power Loss Characteristics
Maximum Average Forward Power Los (W)
s
1100
1000
900
800
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
R
700
600
500
400
300
200
100
0
A
=
0.0
0.0
2K
4K
/W
0.0 / W
6K
-D
/W
elt
a
0.1
R
K/ W
th
S
0.2
K/
W
S
D600N/ R S
eries
(2500V to 3200V)
T = 150°C
J
0.4 K
/
W
1 K/ W
25
0 100 200 300 400 500 600 700 800 900
Average Forward Current (A)
50
75
100
125
150
Maximum Allowable Ambient T
emperature (°C)
Fig. 8 - Forward Power Loss Characteristics
Revision: 11-Jan-18
Document Number: 93551
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-SD600N/R Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave Forward Current (A)
ine
12000
Maximum Non R
epetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 150 °C
J
No Voltage Reapplied
R
ated V
RRM
Reapplied
Peak Half S Wave Forward Current (A)
ine
12000
10000
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 180°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
10000
8000
8000
6000
6000
4000
S
D600N/ R S
eries
(400V to 2000V)
1
10
100
4000
S
D600N/ R S
eries
(2500V to 3200V)
0.1
Puls T
e rain Duration (s)
1
2000
Number Of Equal Amplitude Ha lf Cyc le Current Pulses (N)
2000
0.01
Fig. 9 - Maximum Non-Repetitive Surge Current
14000
12000
10000
8000
6000
4000
2000
0.01
Fig. 12 - Maximum Non-Repetitive Surge Current
10000
Instantaneous Forward Current (A)
T = 25°C
J
T
J
= 180°C
Peak Half S Wave Forward Current (A)
ine
Maximum Non Repetitive S
urge Current
Versus Pulse T
rain Duration.
Initial T = 180 °C
J
No Voltage Reapplied
R
ated V
RRM
Reapplied
1000
S
D600N/ R Series
(400V to 2000V)
0.1
Pulse T
rain Duration (s)
1
S
D600N/ R S
eries
(400V to 2000V)
100
0
1
2
3
4
Instantaneous Forward Voltage (V)
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
Fig. 13 - Forward Voltage Drop Characteristics
10000
Ins
tantaneous F
orward Current (A)
Peak Half S Wave Forward Current (A)
ine
8000
At Any R
ated Load Condition And With
R
ated V
RRM
Applied Following S
urge.
Initial T = 150°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
T = 25°C
J
T = 150°C
J
6000
1000
4000
S
D600N/ R S
eries
(2500V to 3200V)
2000
1
10
100
Number Of Eq ual Amplitude Half Cycle Current Pulses (N)
S
D600N/ R S
eries
(2500V to 3200V)
100
0
1
2
3
4
5
Ins
tantaneous Forward Voltage (V)
Fig. 11 - Maximum Non-Repetitive Surge Current
Fig. 14 - Forward Voltage Drop Characteristics
Revision: 11-Jan-18
Document Number: 93551
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
