Freescale Semiconductor
Technical Data
Document Number: MRF6S27085H
Rev. 3, 12/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2600 to
2700 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.
To be used in Class AB and Class C for WLL applications.
•
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
900 mA, P
out
= 20 Watts Avg., f = 2660 MHz, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz,
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 15.5 dB
Drain Efficiency — 23.5%
ACPR @ 885 kHz Offset — - 48 dBc in 30 kHz Bandwidth
•
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2650 MHz, 85 Watts CW
Output Power
Features
•
Characterized with Series Equivalent Large - Signal Impedance Parameters
•
Internally Matched for Ease of Use
•
Qualified Up to a Maximum of 32 V
DD
Operation
•
Integrated ESD Protection
•
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
•
RoHS Compliant
•
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S27085HR3
MRF6S27085HSR3
2600- 2700 MHz, 20 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF6S27085HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF6S27085HSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 85 W CW
Case Temperature 76°C, 20 W CW
Symbol
R
θJC
Value
(2,3)
0.50
0.56
Unit
°C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S27085HR3 MRF6S27085HSR3
1
RF Device Data
Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114)
Machine Model (per EIA/JESD22 - A115)
Charge Device Model (per JESD22 - C101)
Class
3A (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(V
DS
= 68 Vdc, V
GS
= 0 Vdc)
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0 Vdc)
Gate- Source Leakage Current
(V
GS
= 5 Vdc, V
DS
= 0 Vdc)
On Characteristics
Gate Threshold Voltage
(V
DS
= 10 Vdc, I
D
= 250
μAdc)
Gate Quiescent Voltage
(V
DD
= 28 Vdc, I
D
= 900 mAdc, Measured in Functional Test)
Drain- Source On - Voltage
(V
GS
= 10 Vdc, I
D
= 2.2 Adc)
Dynamic Characteristics
(1)
Reverse Transfer Capacitance
(V
DS
= 28 Vdc
±
30 mV(rms)ac @ 1 MHz, V
GS
= 0 Vdc)
C
rss
—
2.8
—
pF
V
GS(th)
V
GS(Q)
V
DS(on)
1
2
—
2
2.8
0.21
3
4
0.3
Vdc
Vdc
Vdc
I
DSS
I
DSS
I
GSS
—
—
—
—
—
—
10
1
1
μAdc
μAdc
μAdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 900 mA, P
out
= 20 W Avg. N - CDMA, f = 2660 MHz,
Single- Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @
±885
kHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Input Return Loss
1. Part is internally matched both on input and output.
G
ps
η
D
ACPR
IRL
14
21
—
—
15.5
23.5
- 48
- 13
17
—
- 45
-9
dB
%
dBc
dB
MRF6S27085HR3 MRF6S27085HSR3
2
RF Device Data
Freescale Semiconductor
B1
V
BIAS
+
C11
+
C10
C9
C8
L1
B2
C3
R1
Z9
Z10 Z11 Z12 Z13 Z14 Z15
C2
DUT
Z16
RF
OUTPUT
C4
C5
+
C6
+
C7
V
SUPPLY
RF
INPUT
Z1
Z2
C1
Z3
Z4
Z5
Z6
Z7
Z8
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
0.672″ x 0.081″ Microstrip
0.050″ x 0.250″ Microstrip
0.288″ x 0.081″ Microstrip
0.200″ x 0.480″ Microstrip
0.270″ x 0.172″ Microstrip
0.260″ x 0.810″ Microstrip
0.366″ x 0.490″ Microstrip
0.083″ x 0.490″ Microstrip
0.091″ x 0.753″ Microstrip
Z10
Z11
Z12
Z13
Z14
Z15
Z16
PCB
0.287″ x 0.753″ Microstrip
0.220″ x 0.384″ Microstrip
0.122″ x 0.580″ Microstrip
0.266″ x 0.148″ Microstrip
0.130″ x 0.425″ Microstrip
0.380″ x 0.081″ Microstrip
0.703″ x 0.081″ Microstrip
Arlon GX - 0300- 5022, 0.030″,
ε
r
= 2.5
Figure 1. MRF6S27085HR3(SR3) Test Circuit Schematic
Table 5. MRF6S27085HR3(SR3) Test Circuit Component Designations and Values
Part
B1
B2
C1, C2
C3
C4
C5, C8
C6
C7
C9
C10
C11
L1
R1
Description
Ferrite Bead, Surface Mount
Ferrite Bead, Surface Mount
4.7 pF Chip Capacitors
3.6 pF Chip Capacitor
10
μF,
50 V Chip Capacitor
2.2
μF,
50 V Chip Capacitors
47
μF,
50 V Electrolytic Capacitor
330
μF,
63 V Electrolytic Capacitor
0.01
μF
Chip Capacitor
22
μF,
25 V Tantalum Capacitor
47
μF,
16 V Tantalum Capacitor
15 nH, Chip Inductor
3.3
W,
1/3 W Chip Resistor
Part Number
2508051107Y0
2743019447
ATC100B4R7CT500XT
ATC100B3R6CT500XT
GRM55DR61H106KA88B
C1825C225J5RAC
EMVK500ADA470MF80G
EKMG630ELL331MJ20S
C1825C103J1RAC
T491D226K025AT
T491D476K016AT
L0603150GGW
CRCW12103R30FKEA
Manufacturer
Fair- Rite
Fair- Rite
ATC
ATC
Murata
Kemet
United Chemi - Con
United Chemi - Con
Kemet
Kemet
Kemet
AVX
Vishay
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
3
C5
C11 C10
B2
R1
C3
C6
B1* L1*
C8* C9*
C4
C7
C1
CUT OUT AREA
C2
MRF6S27085
Rev. 3
* Components stacked
Figure 2. MRF6S27085HR3(SR3) Test Circuit Component Layout
MRF6S27085HR3 MRF6S27085HSR3
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
η
D
, DRAIN
EFFICIENCY (%)
−10
−12
−14
−16
−18
−20
−22
−24
−26
η
D
, DRAIN
EFFICIENCY (%)
ACPR (dBc), ALT1 (dBc)
−10
−12
−14
−16
−18
−20
−22
−24
−26
ACPR (dBc), ALT1 (dBc)
16.2
16 V
DD
= 28 Vdc, P
out
= 20 W (Avg.)
I
DQ
= 900 mA, Single−Carrier N−CDMA
15.8
15.6 1.2288 MHz Channel Bandwidth
PAR = 9.8 dB @ 0.01%
15.4 Probability (CCDF)
15.2
15
14.8
ACPR
ALT1
η
D
25
24
23
22
G
ps
IRL
−42
−46
−50
−54
G
ps
, POWER GAIN (dB)
14.6
−58
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier N - CDMA Broadband Performance @ 20 Watts Avg.
15.2
15
G
ps
, POWER GAIN (dB)
14.8
14.6
14.4
14.2
14
13.8
η
D
G
ps
38
V
DD
= 28 Vdc, P
out
= 45 W (Avg.)
I
DQ
= 900 mA, Single−Carrier N−CDMA 36
1.2288 MHz Channel Bandwidth 34
PAR = 9.8 dB @ 0.01%
32
Probability (CCDF)
−32
−36
IRL
ACPR
−40
−44
−48
13.6
2600 2610 2620 2630 2640 2650 2660 2670 2680 2690 2700
f, FREQUENCY (MHz)
ALT1
Figure 4. Single - Carrier N - CDMA Broadband Performance @ 45 Watts Avg.
18
17
G
ps
, POWER GAIN (dB)
16
900 mA
15
675 mA
14
13
12
1
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
10
P
out
, OUTPUT POWER (WATTS) PEP
100
300
I
DQ
= 1340 mA
1240 mA
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
−20
−30
V
DD
= 28 Vdc
f1 = 2643.75 MHz, f2 = 2646.25 MHz
Two−Tone Measurements
2.5 MHz Tone Spacing
I
DQ
= 440 mA
IRL, INPUT RETURN LOSS (dB)
1340 mA
−40
IRL, INPUT RETURN LOSS (dB)
1240 mA
−50
900 mA
−60
0.1
675 mA
1
10
100
300
440 mA
P
out
, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27085HR3 MRF6S27085HSR3
RF Device Data
Freescale Semiconductor
5
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