IS61C25616AL IS61C25616AS
IS64C25616AL IS64C25616AS
256K x 16 HIGH-SPEED CMOS STATIC RAM
MARCH 2008
FEATURES
HIGH SPEED: (IS61/64C25616AL)
• High-speed access time: 10ns, 12 ns
• Low Active Power: 150 mW (typical)
• Low Standby Power: 10 mW (typical)
CMOS standby
LOW POWER: (IS61/64C25616AS)
• High-speed access time: 25 ns
• Low Active Power: 75 mW (typical)
• Low Standby Power: 1 mW (typical)
CMOS standby
• TTL compatible interface levels
• Single 5V ± 10% power supply
• Fully static operation: no clock or refresh
required
• Available in 44-pin SOJ package and
44-pin TSOP (Type II)
• Commercial, Industrial and Automotive tempera-
ture ranges available
• Lead-free available
DESCRIPTION
The
ISSI
IS61C25616AL/AS and IS64C25616AL/AS are
high-speed,
4,194,304-bit
static RAMs organized as 262,144
words by 16 bits. They are fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable process
coupled with innovative circuit design techniques, yields
access times as fast as 12 ns with low power consumption.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be reduced
down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE.
The active LOW Write
Enable (WE) controls both writing and reading of the memory.
A data byte allows Upper Byte (UB) and Lower Byte (LB)
access.
The IS61C25616AL/AS and IS64C25616AL/AS are pack-
aged in the JEDEC standard 44-pin 400-mil SOJ and 44-pin
TSOP (Type II).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
DECODER
256K x 16
MEMORY ARRAY
VDD
GND
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
I/O
DATA
CIRCUIT
COLUMN I/O
CE
OE
WE
UB
LB
CONTROL
CIRCUIT
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability
arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any
published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. C
03/21/2008
1
IS61C25616AL
IS64C25616AL
TRUTH TABLE
IS61C25616AS
IS64C25616AS
I/O PIN
Mode
Not Selected
Output Disabled
Read
WE
X
H
X
H
H
H
L
L
L
CE
H
L
L
L
L
L
L
L
L
OE
X
H
X
L
L
L
X
X
X
LB
X
X
H
L
H
L
L
H
L
UB
X
X
H
H
L
L
H
L
L
I/O0-I/O7
High-Z
High-Z
High-Z
D
OUT
High-Z
D
OUT
D
IN
High-Z
D
IN
I/O8-I/O15
High-Z
High-Z
High-Z
High-Z
D
OUT
D
OUT
High-Z
D
IN
D
IN
V
DD
Current
I
SB
1
, I
SB
2
I
CC
1
, I
CC
2
I
CC
1
, I
CC
2
Write
I
CC
1
, I
CC
2
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
STG
P
T
I
OUT
Parameter
Terminal Voltage with Respect to GND
Storage Temperature
Power Dissipation
DC Output Current (LOW)
Value
–0.5 to +7.0
–65 to +150
1.5
20
Unit
V
°C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at these or any other conditions above
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
CAPACITANCE
(1,2)
Symbol
C
IN
C
OUT
Parameter
Input Capacitance
Output Capacitance
Conditions
V
IN
= 0V
V
OUT
= 0V
Max.
5
7
Unit
pF
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25°C, f = 1 MHz, V
DD
= 5.0V.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol Parameter
V
OH
V
OL
V
IH
V
IL
I
LI
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
(1)
Input Leakage
GND
≤
V
IN
≤
V
DD
Com.
Ind.
Auto.
Com.
Ind.
Auto.
Test Conditions
V
DD
= Min., I
OH
= –4.0 mA
V
DD
= Min., I
OL
= 8.0 mA
Min.
2.4
—
2.2
–0.3
–1
–2
–5
–1
–2
–5
Max.
—
0.4
V
DD
+ 0.5
0.8
1
2
5
1
2
5
Unit
V
V
V
V
µA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
DD
Outputs Disabled
µA
Note:
1. V
IL
= –3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/21/2008
3
IS61C25616AL
IS64C25616AL
IS61C25616AS
IS64C25616AS
HIGH SPEED OPTION (IS61/64C25616AL)
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
1
V
DD
Operating
Supply Current
V
DD
Dynamic Operating
Supply Current
Test Conditions
V
DD
= V
DD MAX
.,
CE
= V
IL
I
OUT
= 0 mA, f = 0
V
DD
= V
DD MAX
.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
-10 ns
Min. Max.
—
—
—
—
—
—
30
—
—
—
—
—
—
2
15
20
30
8
12
20
—
—
—
—
—
—
45
50
55
50
55
70
-12 ns
Min. Max.
—
—
—
—
—
—
25
15
20
30
8
12
20
mA
45
50
55
45
50
60
Unit
mA
I
CC
2
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
DD
= V
DD MAX
.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
V
DD
= V
DD MAX
.,
CE
≤
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
I
SB
2
CMOS Standby
Current (CMOS Inputs)
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25
o
C and not 100% tested.
LOW POWER OPTION (IS61/64C25616AS)
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
Symbol Parameter
I
CC
Average operating
Current
V
DD
Dynamic Operating
Supply Current
Test Conditions
CE
= V
IL
,
V
DD
= Max.,
I
OUT
= 0 mA, f = 0
V
DD
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
V
IN
= V
IH
or V
IL
V
DD
= Max.,
V
IN
= V
IH
or V
IL
,
CE
≥
V
IH
,
f=0
V
DD
= Max.,
CE
≥
V
DD
– 0.2V,
V
IN
≥
V
DD
– 0.2V,
or V
IN
≤
V
SS
+ 0.2V, f = 0
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
Com.
Ind.
Auto.
Com.
Ind.
Auto.
typ.
(2)
-25 ns
Min. Max.
—
—
—
—
—
—
15
—
—
—
—
—
—
0.2
1
1.5
2
0.8
0.9
2
mA
10
15
20
25
30
40
Unit
mA
I
CC
1
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
CMOS Standby
Current (CMOS Inputs)
I
SB
2
mA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Typical values are measured at V
DD
= 5V, T
A
= 25
o
C and not 100% tested.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. C
03/21/2008
5
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