DISCRETE SEMICONDUCTORS
DATA SHEET
LTE42008R
NPN microwave power transistor
Product specification
Supersedes data of June 1992
File under Discrete Semiconductors, SC15
1997 Feb 24
Philips Semiconductors
Product specification
NPN microwave power transistor
FEATURES
•
Diffused emitter ballasting resistors provide excellent
current sharing and withstanding a high VSWR
•
Gold metallization realizes very stable characteristics
and excellent lifetime
•
Input matching cell improves input impedance and
allows an easier design of circuits.
APPLICATION
•
Common emitter class-A linear power amplifiers up
to 4.2 GHz.
PINNING - SOT440A
PIN
1
2
3
collector
base
LTE42008R
DESCRIPTION
emitter connected to flange
olumns
1
c
b
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT440A metal ceramic flange package with the emitter
connected to the flange.
2
Top view
3
MAM131
e
Marking code:
196
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to T
mb
= 25
°C
in a common emitter class-A amplifier.
MODE OF OPERATION
Class-A (CW) linear
f
(GHz)
4.2
V
CE
(V)
16
I
C
(mA)
250
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
P
L1
(mW)
≥800
G
po
(dB)
>7
Z
i
(Ω)
7.5 + j23.5
Z
L
(Ω)
2.5
−
j9
1997 Feb 24
2
Philips Semiconductors
Product specification
NPN microwave power transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CER
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
T
sld
PARAMETER
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
operating junction temperature
soldering temperature
T
mb
≤
75
°C
CONDITIONS
open emitter
R
BE
= 250
Ω
open base
open collector
−
−
−
−
−
−
−65
−
at 0.3 mm from case; t = 10 s
−
MIN.
LTE42008R
MAX.
40
20
16
3
450
7.5
+200
200
235
V
V
V
V
UNIT
mA
W
°C
°C
°C
handbook, halfpage
1
MGL060
handbook, halfpage
10
MLA736
Ptot
(W)
IC
(A)
0.16
7.5
10
−1
5.0
2.5
Ι
ΙΙ
10
−2
1
10
16
VCER (V)
10
2
0
−50
0
50
100
150
200
o
C)
Tamb (
T
mb
≤
75
°C.
(1) Region of permissible DC operation.
(2) Permissible extension provided R
BE
≤
250
Ω.
Fig.3
Fig.2 DC SOAR.
Power dissipation derating as a function of
mounting-base temperature.
1997 Feb 24
3
Philips Semiconductors
Product specification
NPN microwave power transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-mb
R
th mb-h
Note
1. See “Mounting
recommendations in the General part of handbook SC15”.
CHARACTERISTICS
T
mb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
CER
I
EBO
h
FE
C
cb
C
ce
C
eb
PARAMETER
collector cut-off current
emitter cut-off current
emitter cut-off current
DC current gain
collector-base capacitance
collector-emitter capacitance
emitter-base capacitance
CONDITIONS
V
CB
= 20 V; I
E
= 0
V
CB
= 40 V; I
E
= 0
V
CE
= 20 V; R
BE
= 250
Ω
V
EB
= 1.5 V; I
C
= 0
V
CE
= 5 V; I
C
= 250 mA
V
CB
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CE
= 16 V; V
EB
= 1.5 V;
I
E
= I
C
= 0; f = 1 MHz
V
CB
= 10 V; V
EB
= 1 V;
I
C
= I
E
= 0; f = 1 MHz
MIN.
−
−
−
−
15
−
−
−
PARAMETER
thermal resistance from junction to mounting-base
thermal resistance from mounting-base to heatsink
CONDITIONS
T
j
= 70
°C
T
j
= 70
°C;
note 1
LTE42008R
MAX.
12
0.7
UNIT
K/W
K/W
TYP.
−
−
−
−
−
2
1.5
20
MAX.
150
1
0.5
0.4
150
−
−
−
UNIT
µA
mA
mA
µA
pF
pF
pF
1997 Feb 24
4
Philips Semiconductors
Product specification
NPN microwave power transistor
Table 1
f
(MHz)
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
3100
3200
3300
3400
3500
3600
3700
3800
3900
4000
4100
4200
4300
4400
4500
4600
4700
4800
4900
5000
LTE42008R
Common-emitter scattering parameters: V
CE
= 16 V; I
C
= 250 mA; T
mb
= 25
°C;
Z
o
= 50
Ω;
typical values
s
11
MAGNITUDE
(ratio)
0.80
0.79
0.79
0.80
0.79
0.79
0.78
0.77
0.75
0.73
0.71
0.67
0.64
0.60
0.56
0.52
0.49
0.47
0.46
0.48
0.51
0.56
0.61
0.67
0.71
0.76
0.79
0.81
0.82
0.82
0.82
ANGLE
(deg)
160
157
155
153
151
150
148
147
146
144
143
143
141
141
142
143
146
149
154
159
161
162
161
158
155
152
147
143
140
136
132
s
21
MAGNITUDE
(ratio)
0.061
0.065
0.068
0.071
0.074
0.079
0.085
0.090
0.095
0.099
0.104
0.111
0.116
0.121
0.124
0.124
0.124
0.122
0.118
0.112
0.106
0.096
0.083
0.068
0.054
0.042
0.031
0.025
0.026
0.034
0.043
ANGLE
(deg)
61.5
59.4
56.5
54.3
52.2
50.1
48.4
45.1
41.7
38.3
35.4
31.8
27.4
21.7
15.7
11.2
5.2
−2.2
−9.7
−15.7
−22.8
−29.4
−34.5
−37.4
−38.7
−35.4
−26.6
−5.6
28.8
40.1
52.4
s
12
MAGNITUDE
(ratio)
1.40
1.37
1.36
1.35
1.35
1.35
1.34
1.34
1.35
1.38
1.40
1.42
1.43
1.44
1.48
1.49
1.48
1.47
1.45
1.41
1.34
1.26
1.18
1.08
0.99
0.90
0.81
0.73
0.66
0.59
0.53
ANGLE
(deg)
42.4
38.0
34.0
29.9
25.3
21.1
16.2
11.8
7.6
2.9
−2.6
−8.3
−14.1
−20.4
−28.1
−36.4
−45.1
−53.9
−63.1
−72.9
−82.5
−91.7
−100.1
−108.8
−117.8
−126.5
−134.7
−143.0
−151.2
−158.8
−167.3
s
22
MAGNITUDE
(ratio)
0.45
0.44
0.44
0.45
0.45
0.45
0.46
0.47
0.48
0.50
0.52
0.55
0.58
0.62
0.66
0.70
0.74
0.79
0.84
0.87
0.91
0.94
0.96
0.97
0.98
0.99
0.99
0.99
0.99
0.99
0.98
ANGLE
(deg)
−172.7
−173.7
−175.5
−176.5
−176.9
−177.6
−178.0
−178.3
−178.6
−178.9
−178.8
−179.2
−179.9
178.8
176.9
174.4
171.3
166.8
161.9
156.7
150.7
144.8
138.6
132.5
127.3
122.2
117.2
113.7
110.0
106.5
103.2
1997 Feb 24
5
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