®
BYW99P/PI/W
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
FEATURES
SUITED FOR SMPS
VERY LOW FORWARD LOSSES
NEGLIGIBLE SWITCHING LOSSES
HIGH SURGE CURRENT CAPABILITY
HIGH AVALANCHE ENERGY CAPABILITY
INSULATED VERSION TOP3I :
Insulating voltage = 2500 V DC
Capacitance = 12 pF
A1
K
A2
DESCRIPTION
Dual center tap rectifier suited for switchmode
power supply and high frequency DC to DC
converters.
Packaged in SOT93, TOP3I or TO247 this device
is intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
ABSOLUTE MAXIMUM RATINGS
Symbol
I
F(RMS)
O
so
b
I
F(AV)
I
FSM
Tstg
Tj
V
RRM
te
le
RMS forward current
Average forward current
SOT93 / TO247
δ
= 0.5
TOP3I
Surge non repetitive forward current
Storage and junction temperature range
Tc=120°C
Tc=115°C
tp=10ms
sinusoidal
r
P
uc
od
s)
t(
bs
-O
et
l
o
P
e
od
r
isolated
TOP3I
(Plastic)
BYW99PI-200
s)
t(
uc
A2
K
A1
SOT93
(Plastic)
BYW99P-200
TO247
(Plastic)
BYW99W-200
Parameter
Per diode
Per diode
Per diode
Per diode
Value
35
15
15
200
- 40 to + 150
- 40 to + 150
Value
200
Unit
A
A
A
°C
°C
Unit
V
Symbol
Parameter
Repetitive peak reverse voltage
October 1999
Ed : 2A
1/6
BYW99P/PI/W
THERMAL RESISTANCES
Symbol
Rth (j-c)
Junction to case
Parameter
SOT93 / TO247
Per diode
Total
TOP3I
Per diode
Total
Value
1.8
1.0
2.0
1.25
0.2
0.5
Unit
°C/W
Rth (c)
Coupling
SOT93 / TO247
TOP3I
°C/W
When the diodes 1 and 2 are used simultaneously :
Tj-Tc (diode 1) = P(diode 1) x R
th(j-c)
(Per diode) + P(diode 2) x R
th(c)
STATIC ELECTRICAL CHARACTERISTICS
(Per diode)
Symbol
I
R
*
T
j
= 25°C
T
j
= 100°C
V
F **
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
Pulse test : * tp = 5 ms,
δ
< 2 %
** tp = 380
µs, δ
< 2 %
Test Conditions
V
R
= V
RRM
Min.
I
F
= 12 A
I
F
= 25 A
I
F
= 25 A
To evaluate the conduction losses use the following equation :
P = 0.65 x I
F(AV)
+ 0.016 x I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol
b
O
tfr
trr
so
te
le
r
P
uc
od
s)
t(
b
-O
so
et
l
P
e
od
r
Typ.
s)
t(
uc
Max.
20
1.5
0.85
1.05
1.15
V
Unit
µA
mA
Test Conditions
I
F
= 0.5A
I
R
= 1A
I
F
= 1A
V
R
= 30V
Irr = 0.25A
Min.
Typ.
Max.
25
Unit
ns
T
j
= 25°C
dI
F
/dt = -50A/µs
40
T
j
= 25°C
I
F
= 1A
V
FR
= 1.1 x V
F
I
F
= 1A
tr = 10 ns
15
ns
V
FP
2/6
T
j
= 25°C
tr = 10 ns
2
V
BYW99P/PI/W
Fig.1 :
Average forward power dissipation versus
average forward current.
P F(av)(W)
=0.2
=0.05
=0.1
=0.5
=1
Fig.2 :
Peak current versus form factor.
20
17.5
15
12.5
10
7.5
5
2.5
350
300
250
IM(A)
T
I
M
=tp/T
200
T
tp
150
100
P=10W
P=20W
P=30W
I F(av)(A)
2.5
5
7.5
10
12.5
50
=tp/T
tp
0
0
15
17.5
20
0
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
Fig.3 :
Forward voltage drop versus forward
current (maximum values).
VFM(V)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Tj=125
o
C
Fig.4 :
Relative variation of thermal impedance
junction to case versus pulse duration.
1.0
K
Zth(j-c) (tp.
K =
Rth(j-c)
=0.5
0.5
IFM(A)
1
0.1
Fig.5 :
Non repetitive surge peak forward current
versus overload duration.
(SOT93, TO247)
160
150
140
130
120
110
100
90
80
70
60
50
40
IM
30
20
10
0
0.001
O
so
b
IM(A)
te
le
r
P
uc
od
10
s)
t(
bs
-O
0.2
0.1
1.0E-03
=0.2
et
l
o
P
e
)
od
r
s)
t(
uc
1
=0.1
T
Single pulse
100 200
tp(s)
1.0E-02
1.0E-01
=tp/T
tp
1.0E+00
Fig.6 :
Non repetitive surge peak forward current
versus overload duration.
(TOP3I)
160
150
140
130
120
110
100
90
80
70
60
50
40
IM
30
20
10
0
0.001
IM(A)
Tc=25
o
C
Tc=75
o
C
Tc=120
o
C
Tc=25
o
C
Tc=60
o
C
t
=0.5
t(s)
0.01
0.1
1
t
=0.5
t(s)
0.01
0.1
Tc=115
o
C
1
3/6
BYW99P/PI/W
Fig.7 :
Average current
temperature.
(δ = 0.5) (SOT93, TO247)
versus
ambient
Fig.8 :
Average
temperature.
(δ = 0.5) (TOP3I)
current
versus
ambient
I F(av)(A)
16
15
14
Rth(j-a)=Rth(j-c)
13
12
11
10
Rth(j-a)=15
o
C/W
9
8
7
=0.5
T
6
5
4
3
2
=tp/T
tp
Tamb(
o
C)
1
0
0
20
40
60
80
100 120
140
160
I F(av)(A)
16
15
14
Rth(j-a)=Rth(j-c)
13
12
11
10
Rth(j-a)=15
o
C/W
9
8
7
=0.5
T
6
5
4
3
2
=tp/T
tp
1
Tamb(
o
C)
0
0
20
40
60
80
100 120
Fig.9 :
Junction capacitance versus reverse
voltage applied (Typical values).
C(pF)
F=1Mhz Tj=25
o
C
Fig.10 :
Recovery charges versus dI
F
/dt.
20 0
1 90
1 80
1 70
1 60
1 50
1 40
1 30
1 20
11 0
VR(V)
10
1 00
1
Fig.11 :
Peak reverse current versus dIF/dt.
3.0
2.5
2.0
IRM(A)
b
O
1.5
1.0
0.5
0.0
1
so
90%CONFIDENCE
te
le
r
P
uc
od
s)
t(
1 00
bs
-O
200
60
55
90%CONFIDENCE
50
IF=IF(av)
45
40
35
30
25
20
15
10
5
0
1
QRR(nC)
et
l
o
P
e
od
r
s)
t(
uc
140
160
Tj=100
O
C
Tj=25
O
C
dIF/dt(A/us)
10
1 00
Fig.12 :
Dynamic parameters versus junction
temperature.
QRR;IRM[Tj]/QRR;IRM[Tj=125
o
C]
1.50
1.25
Tj=100
O
C
IF=IF(av)
1.00
IRM
0.75
QRR
0.50
Tj=25
O
C
0.25
0.00
0
25
dIF/dt(A/us)
20
10
1 00
Tj(
o
C)
50
75
100
125
150
4/6
BYW99P/PI/W
PACKAGE MECHANICAL DATA
SOT93
DIMENSIONS
Millimeters
Inches
Min.
Max.
Min.
Max.
4.70
4.90
1.185 0.193
1.90
2.10
0.075 0.083
2.50 typ.
0.098 typ.
2.00 typ.
0.078 typ
0.50
0.78
0.020 0.031
1.10
1.30
0.043 0.051
1.75 typ
0.069 typ
2.10 typ.
0.083 typ.
10.80 11.10 0.425 0.437
14.70 15.20 0.279 0.598
12.20
0.480
16.20
0.638
18.0 typ.
0.709 typ.
3.95
4.15
0.156 0.163
31.00 typ.
1.220 typ.
4.00
4.10
0.157 0.161
REF.
A
C
D
D1
E
F
F3
F4
G
H
L
L2
L3
L5
L6
O
Marking
: Type number
Cooling method : C
Weight : 5.3 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
PACKAGE MECHANICAL DATA
TOP3I (isolated)
O
so
b
te
le
r
P
uc
od
s)
t(
bs
-O
et
l
o
A
B
C
D
E
F
G
H
J
K
L
P
R
P
e
od
r
s)
t(
uc
DIMENSIONS
Millimeters
Min.
Max.
4.4
4.6
1.45
1.55
14.35 15.60
0.5
0.7
2.7
2.9
15.8
16.5
20.4
21.1
15.1
15.5
5.4
5.65
3.4
3.65
4.08
4.17
1.20
1.40
4.60 typ.
Inches
Min.
Max.
0.173 0.181
0.057 0.061
0.565 0.614
0.020 0.028
0.106 0.114
0.622 0.650
0.815 0.831
0.594 0.610
0.213 0.222
0.134 0.144
0.161 0.164
0.047 0.055
0.181 typ
REF.
Marking
: Type number
Cooling method : C
Weight : 4.7 g
Recommended torque value : 0.8m.N
Maximum torque value : 1.0m.N
5/6
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