MMSZ52xxET1G Series,
SZMMSZ52xxET1G Series
Zener Voltage Regulators
500 mW SOD−123 Surface Mount
Three complete series of Zener diodes are offered in the convenient,
surface mount plastic SOD−123 package. These devices provide a
convenient alternative to the leadless 34−package style.
Features
http://onsemi.com
500 mW Rating on FR−4 or FR−5 Board
Wide Zener Reverse Voltage Range
−
2.4 V to 110 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
General Purpose, Medium Current
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Peak Power
−
225 W (8
x
20
ms)
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
SOD−123
CASE 425
STYLE 1
1
Cathode
2
Anode
MARKING DIAGRAM
1
xxx M
G
G
260C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
25C
Total Power Dissipation on FR−5 Board,
(Note 3) @ T
L
= 75C
Derated above 75C
Thermal Resistance, (Note 2)
Junction−to−Ambient
Thermal Resistance, (Note 2)
Junction−to−Lead
Junction and Storage Temperature Range
Symbol
P
pk
P
D
Max
225
Units
W
xxx = Device Code (Refer to page 2)
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MMSZ52xxET1G
Package
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
SOD−123
(Pb−Free)
Shipping
†
3,000 /
Tape & Reel
3,000 /
Tape & Reel
10,000 /
Tape & Reel
500
6.7
340
150
−55
to
+150
mW
mW/C
C/W
SZMMSZ52xxET1G
MMSZ52xxET3G
R
qJA
R
qJL
T
J
, T
stg
C/W
C
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Nonrepetitive current pulse per Figure 11.
2. Thermal Resistance measurement obtained via infrared Scan Method.
3. FR−5 = 3.5 x 1.5 inches, using the minimum recommended footprint.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Semiconductor Components Industries, LLC, 2012
February, 2012
−
Rev. 8
1
Publication Order Number:
MMSZ5221ET1/D
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless
otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
ZK
Z
ZK
I
R
V
R
I
F
V
F
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZK
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Notes 4 and 5)
Device
Marking
CA1
CA3
CA6
CA8
CA9
CB2
CB3
CB5
CB6
CB7
CB8
CC2
CC4
CC5
CC6
CC7
CC8
CD1
CD3
CD5
V
Z
(V)
Min
2.28
2.57
3.14
3.71
4.09
4.85
5.32
5.89
6.46
7.13
7.79
9.50
11.40
12.35
13.30
14.25
15.20
17.10
19.00
22.80
Nom
2.4
2.7
3.3
3.9
4.3
5.1
5.6
6.2
6.8
7.5
8.2
10
12
13
14
15
16
18
20
24
Max
2.52
2.84
3.47
4.10
4.52
5.36
5.88
6.51
7.14
7.88
8.61
10.50
12.60
13.65
14.70
15.75
16.80
18.90
21.00
25.20
@ I
ZT
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9.0
8.5
7.8
7.0
6.2
5.2
Zener Impedance
(Note 6)
Z
ZT
@ I
ZT
W
30
30
28
23
22
17
11
7
5
6
8
17
30
13
15
16
17
21
25
33
Z
ZK
@ I
ZK
W
1200
1300
1600
1900
2000
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
100
75
25
10
5
5
5
5
3
3
3
3
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
V
1
1
1
1
1
2
3
4
5
6
6.5
8
9.1
9.9
10
11
12
14
15
18
Device*
MMSZ5221ET1G
MMSZ5223ET1G
MMSZ5226ET1G
MMSZ5228ET1G
MMSZ5229ET1G
MMSZ5231ET1G
MMSZ5232ET1G
MMSZ5234ET1G
MMSZ5235ET1G
MMSZ5236ET1G
MMSZ5237ET1G
MMSZ5240ET1G
MMSZ5242ET1G
MMSZ5243ET1G
MMSZ5244ET1G
MMSZ5245ET1G
MMSZ5246ET1G
MMSZ5248ET1G
MMSZ5250ET1G
MMSZ5252ET1G
4. The type numbers shown have a standard tolerance of
5%
on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30C
1C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
http://onsemi.com
2
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
ELECTRICAL CHARACTERISTICS
(T
A
= 25C unless otherwise noted, V
F
= 0.9 V Max. @ I
F
= 10 mA)
Zener Voltage
(Notes 4 and 5)
Device
Marking
CD6
CD7
CD8
CD9
CE1
CE2
CE3
CE6
CE7
V
Z
(V)
Min
23.75
25.65
26.60
28.50
31.35
34.20
37.05
48.45
53.20
Nom
25
27
28
30
33
36
39
51
56
Max
26.25
28.35
29.40
31.50
34.65
37.80
40.95
53.55
58.80
@ I
ZT
mA
5.0
4.6
4.5
4.2
3.8
3.4
3.2
2.5
2.2
Zener Impedance
(Note 6)
Z
ZT
@ I
ZT
W
35
41
44
49
58
70
80
125
150
Z
ZK
@ I
ZK
W
600
600
600
600
700
700
800
1100
1300
mA
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Leakage Current
I
R
@ V
R
mA
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
19
21
21
23
25
27
30
39
43
Device*
MMSZ5253ET1G
MMSZ5254ET1G
MMSZ5255ET1G
MMSZ5256ET1G
MMSZ5257ET1G
MMSZ5258ET1G
MMSZ5259ET1G
MMSZ5262ET1G
MMSZ5263ET1G
4. The type numbers shown have a standard tolerance of
5%
on the nominal Zener voltage.
5. Nominal Zener voltage is measured with the device junction in thermal equilibrium at T
L
= 30C
1C.
6. Z
ZT
and Z
ZK
are measured by dividing the AC voltage drop across the device by the ac current applied.
The specified limits are for I
Z(AC)
= 0.1 I
Z(dc)
with the AC frequency = 1 kHz.
*Include SZ-prefix devices where applicable
http://onsemi.com
3
MMSZ52xxET1G Series, SZMMSZ52xxET1G Series
TYPICAL CHARACTERISTICS
q
VZ
, TEMPERATURE COEFFICIENT (mV/C)
8
7
6
5
4
3
2
1
0
−1
−2
−3
V
Z
@ I
ZT
TYPICAL T
C
VALUES
FOR MMSZ5221BT1G SERIES
q
VZ
, TEMPERATURE COEFFICIENT (mV/C)
100
TYPICAL T
C
VALUES
FOR MMSZ5221BT1G SERIES
V
Z
@ I
ZT
10
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range
−
55C to +150C)
1.2
P
D
, POWER DISSIPATION (WATTS)
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
T, TEMPERATURE (C)
125
P
D
versus T
A
P
D
versus T
L
1000
Figure 2. Temperature Coefficients
(Temperature Range
−
55C to +150C)
P
pk
, PEAK SURGE POWER (WATTS)
RECTANGULAR
WAVEFORM, T
A
= 25C
100
10
150
1
0.1
1
10
100
PW, PULSE WIDTH (ms)
1000
Figure 3. Steady State Power Derating
Figure 4. Maximum Nonrepetitive Surge Power
1000
Z
ZT
, DYNAMIC IMPEDANCE (W)
T
J
= 25C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
I
F
, FORWARD CURRENT (mA)
75 V (MMSZ5267BT1)
91 V (MMSZ5270BT1)
I
Z
= 1 mA
5 mA
20 mA
10
100
100
10
150C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75C 25C
0C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 5. Effect of Zener Voltage on
Zener Impedance
Figure 6. Typical Forward Voltage
http://onsemi.com
4
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
