3. Measured under pulse conditions to reduce heating.
Symbol
V
(BO)
−
−
V
(BO)
−
−
dV
(BO)
/dT
J
V
(BR)
I
D1
I
D2
V
T
I
BO
I
H
dv/dt
C
O
−
−
−
−
−
−
150
2000
−
−
−
−
0.12
350
−
−
1.82
475
300
−
40
81
400
412
−
−
2.0
5.0
5.0
−
−
−
−
85
V/°C
V
mA
V
mA
mA
V/ms
pF
−
−
400
412
V
Min
Typ
Max
Unit
V
Voltage Current Characteristic of TSPD
(Bidirectional Device)
+ Current
Symbol
I
D1
, I
D2
V
D1
, V
D2
V
BR
V
BO
I
BO
I
H
V
TM
Parameter
Off State Leakage Current
Off State Blocking Voltage
Breakdown Voltage
Breakover Voltage
Breakover Current
Holding Current
On State Voltage
+ Voltage
V
D1
V
D2
V
(BR)
I
H
I
D1
I
D2
I
(BO)
V
TM
V
(BO)
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2
MMT10B350T3
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
0
20
40 60 80
TEMPERATURE (°C)
100 120 140
100
I
D1
, OFF−STATE CURRENT (mA)
V
D1
= 50V
10
400
390
380
370
360
350
340
330
320
−60 −40 −20
0
20 40 60 80
TEMPERATURE (°C)
100 120 140
1.0
0.1
0.01
0.001
−60 −40 −20
Figure 1. Typical Off−State Current versus
Temperature
Figure 2. Typical Breakdown Voltage versus
Temperature
V
BO
, BREAKOVER VOLTAGE (VOLTS)
440
430
420
410
400
390
380
−60 −40 −20
600
550
I
H
, Holding Current (mA)
20 40
0
60
80
TEMPERATURE (°C)
100 120 140
500
450
400
350
300
250
200
150
100
−40 −20
0
20
40
60
80
TEMPERATURE (°C)
100
120
Figure 3. Maximum Breakover Voltage versus
Temperature
420
Peak
Value
t
r
= rise time to peak value
t
f
= decay time to half value
CURRENT (A)
400
380
360
340
320
300
280
260
240
0
0 t
r
t
f
TIME (ms)
220
10
Figure 4. Typical Holding Current versus
Temperature
I
PP
− PEAK PULSE CURRENT − %I
PP
100
50
Half Value
100
TIME (sec)
1000
100000
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On−State Current versus
Surge Current Duration, Sinusoidal Waveform
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3
MMT10B350T3
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
PPTC*
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
PPTC*
*Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE
PLANT
GND
TELECOM
EQUIPMENT
RING
HEAT COIL
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4
MMT10B350T3
PACKAGE DIMENSIONS
SMB
CASE 403C−01
ISSUE A
S
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. D DIMENSION SHALL BE MEASURED WITHIN
DIMENSION P.
INCHES
DIM MIN
MAX
A
0.160
0.180
B
0.130
0.150
C
0.075
0.095
D
0.077
0.083
H
0.0020 0.0060
J
0.006
0.012
K
0.030
0.050
P
0.020 REF
S
0.205
0.220
MILLIMETERS
MIN
MAX
4.06
4.57
3.30
3.81
1.90
2.41
1.96
2.11
0.051
0.152
0.15
0.30
0.76
1.27
0.51 REF
5.21
5.59
D
B
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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