®
BUV61
HIGH POWER NPN SILICON TRANSISTOR
s
s
s
s
NPN TRANSISTOR
HIGH CURRENT CAPABILITY
FAST SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
APPLICATION
s
SWITCHING REGULATORS
s
MOTOR CONTROL
DESCRIPTION
The BUV61 is a Multi-Epitaxial planar NPN
transistor in TO-3 metal case.
It is intented for use in high frequency and
efficiency converters such us motor controllers
and industrial equipment.
1
bs
O
I
C
I
CM
I
B
I
BM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
Parameter
Collector-emitter Voltage (V
BE
= -1.5V)
Collector-emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Reverse Bias Base Dissipation
(B.E. junction in avalanche)
o
Total Power Dissipation at T
case
< 25 C
Storage Temperature
Max Operating Junction Temperature
Value
300
200
7
50
75
8
15
2
250
-65 to 200
200
Unit
V
V
V
A
A
A
A
W
W
o
o
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
TO-3
(version " S ")
ro
P
2
uc
d
s)
t(
INTERNAL SCHEMATIC DIAGRAM
P
Base
P
tot
T
stg
T
j
C
C
October 2003
1/5
BUV61
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
0.7
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CER
I
CEV
Parameter
Collector Cut-off
Current (R
BE
= 10Ω)
Collector Cut-off
Current
(V
BE
= -1.5V)
Emitter Cut-off
Current (I
C
= 0)
Test Conditions
V
CE
= 300 V
V
CE
= 300 V
V
CE
= 300V
V
CE
= 300V
V
EB
= 5 V
I
C
= 0.2A
L = 25 mH
200
T
C
= 100 C
T
C
=100 C
o
o
Min.
Typ.
Max.
1
5
1
4
1
Unit
mA
mA
mA
mA
I
EBO
V
CEO(sus)
∗
Collector-Emitter
Sustaining Voltage
(I
B
= 0)
V
EBO
V
CE(sat)
∗
Emitter-base
Voltage (I
C
= 0)
Collector-Emitter
Saturation Voltage
I
E
= 50 mA
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
I
C
=
=
=
=
=
=
=
=
=
=
12.5A
25A
40A
12.5A
25A
40A
25A
40A
25A
40A
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
I
B
=
=
=
=
=
=
=
=
=
=
0.625A
2.5A
5A
0.625A T
j
= 100
o
C
2.5A
T
j
= 100
o
C
o
5A
T
j
= 100 C
2.5A
5A
2.5A
5A
V
BE(sat)
∗
Base-Emitter
Saturation Voltage
di
c
/d
t
∗
Rated of Rise of
on-state Collector
Current
Collector Emitter
Dynamic Voltage
Collector Emitter
Dynamic Voltage
V
CE(2µs)
V
CE(4µs)
bs
O
∗
Pulsed: Pulse duration = 300
µs,
duty cycle = 2 %
et
l
o
od
r
P
e
uc
V
CC
= 160V R
C
= 0
T
j
= 25
o
C
T
j
= 100
o
C
V
CC
= 160V R
C
= 6.4Ω
T
j
= 25
o
C
T
j
= 100
o
C
V
CC
= 160V R
C
= 6.4Ω
T
j
= 25
o
C
T
j
= 100
o
C
s)
t(
O
-
so
b
t
le
P
e
7
ro
uc
d
s)
t(
V
V
V
V
V
V
V
V
V
V
V
mA
0.65
0.4
0.6
0.5
0.5
0.75
1.05
1.35
1.1
1.35
0.9
0.9
1.2
1.2
1.5
1.9
1.4
1.8
1.7
1.8
T
j
= 100
o
C
T
j
= 100
o
C
I
B1
=3.75A
70
60
I
B1
=2.5A
130
110
1.3
1.8
3
5
2
3
A/µs
A/µs
V
V
V
V
I
B1
=2.5A
0.95
1.1
2/5
BUV61
ELECTRICAL CHARACTERISTICS
(continued)
Symbol
t
r
t
s
t
f
t
s
t
f
t
t
t
c
t
s
t
f
t
t
t
c
t
s
t
f
t
t
t
s
t
f
t
t
Parameter
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
INDUCTIVE LOAD
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
Storage Time
Fall Time
Tail Time in Turn-on
Crossover Time
Storage Time
Fall Time
Tail Time in Turn-on
Storage Time
Fall Time
Tail Time in Turn-on
Test Conditions
V
CC
= 160V
V
BB
= -5V
R
B2
= 0.5Ω
V
CC
= 160V
I
C
= 25A
V
BB
= -5V
L
C
= 0.32mH
V
CC
= 160V
I
C
= 25A
V
BB
= -5V
L
C
= 0.32mH
V
CC
= 160V
I
C
= 25A
V
BB
= 0
L
C
= 0.32mH
V
CC
= 160V
I
C
= 25A
V
BB
= 0
L
C
= 0.32mH
I
C
= 40A
I
B1
= 5A
T
p
= 30µs
V
clamp
= 200V
I
B
= 2.5A
R
B2
= 1Ω
V
clamp
= 200V
I
B
= 2.5A
R
B2
= 1Ω
T
j
= 100
o
C
V
clamp
= 200V
I
B
= 2.5A
R
B2
= 2.7Ω
V
clamp
= 200V
I
B
= 2.5A
R
B2
= 2.7Ω
T
j
= 100
o
C
Min.
Typ.
0.55
0.6
0.07
0.85
0.06
0.01
0.11
1.1
0.08
0.02
0.15
Max.
0.7
1.2
0.3
1.9
0.15
0.07
0.3
2.4
0.25
0.15
0.5
Unit
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
∗
Pulsed: Pulse duration = 300
µs,
duty cycle
=
2 %
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
s
b
te
le
o
ro
P
1.6
0.7
0.2
uc
d
s)
t(
2.7
1
0.3
3/5
BUV61
TO-3 (version S) MECHANICAL DATA
mm
MIN.
A
B
C
D
E
G
N
P
R
U
V
11.00
1.47
1.50
8.32
19.00
10.70
16.50
25.00
4.00
38.50
30.00
TYP.
MAX.
13.10
1.60
1.65
8.92
20.00
11.10
17.20
26.00
4.09
MIN.
0.433
0.058
0.059
0.327
0.748
0.421
inch
TYP.
MAX.
0.516
0.063
DIM.
bs
O
et
l
o
V
ro
P
e
uc
d
)-
(s
t
P
G
39.30
30.30
b
O
so
te
le
0.984
0.157
1.515
1.187
0.649
r
P
d
o
uc
s)
t(
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
0.065
A
D
C
U
O
N
R
B
P003O
4/5
E
BUV61
bs
O
et
l
o
ro
P
e
uc
d
s)
t(
O
-
so
b
te
le
ro
P
uc
d
s)
t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2003 STMicroelectronics – All Rights reserved
STMicroelectronics GROUP OF COMPANIES
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