Figure 1. Input Waveform and Test Circuit for Determining Delay Time and Rise Time
V
i
=
−
0.5 V to +9.9 V, V
CC
= +30 V, R1 = 619
W,
R2 = 200
W.
PULSE GENERATOR:
PULSE DURATION
RISE TIME
DUTY FACTOR
t
p
3 200 ns
t
r
3
2 ns
d
=
0.02
OSCILLOSCOPE:
INPUT IMPEDANCE
INPUT CAPACITANCE
RISE TIME
Z
i
> 100 kW
C
i
< 12 pF
5 ns
t
r
<
V
i
+16.2 V
V
CC
R2
D.U.T.
R3
Vo
OSCILLOSCOPE
R4
t
f
100
ms
V
BB
R1
0
TIME
V
i
D1
- 13.8 V
Figure 2. Input Waveform and Test Circuit for Determining Storage Time and Fall Time
TYPICAL CHARACTERISTICS
1
I
C
/I
B
= 10
V
CE
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
BE(sat)
, BASE−EMITTER
SATURATION VOLTAGE (V)
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 150°C
T
A
= 25°C
T
A
=
−55°C
I
C
/I
B
= 10
0.1
T
A
= 25°C
T
A
=
−55°C
T
A
= 150°C
0.01
0.1
1
10
100
1000
0.1
1
10
100
1000
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Emitter Saturation Voltage
vs. Collector Current
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
http://onsemi.com
3
PZT2222A
TYPICAL CHARACTERISTICS
1000
T
A
= 150°C
T
A
= 25°C
100
V
CE(sat)
, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
V
CE
= 6 V
h
FE
, DC CURRENT GAIN
2.0
1.8
I
C
= 1 mA
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10 mA
T
A
= 25°C
100 mA
300 mA
1
T
A
=
−55°C
10
0.1
1
10
100
1000
0.001
0.01
0.1
600 mA
10
100
I
C
, COLLECTOR CURRENT (mA)
I
B
, BASE CURRENT (mA)
Figure 5. DC Current Gain vs. Collector
Current
V
BE(ON)
, BASE−EMITTER ON VOLTAGE (V)
1.1
1.0
V
CE
= 2 V
C, CAPACITANCE (pF)
100
Figure 6. Saturation Region
0.9 T
A
=
−55°C
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
A
= 150°C
0.1
1
10
100
1000
T
A
= 25°C
C
ibo
C
obo
10
1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
Figure 7. Base−Emitter Turn−On Voltage vs.
Collector Current
1000
I
C
, COLLECTOR CURRENT (mA)
1s
0.1
100
0.01
0.001
0.0001
Figure 8. Capacitance
10
Single Pulse Test at T
A
= 25°C
1
1
10
V
CE
, COLLECTOR EMITTER VOLTAGE (V)
100
Figure 9. Safe Operating Area
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4
PZT2222A
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
0.064
A
1.50
1.63
1.75
0.060
0.002
A1
0.02
0.06
0.10
0.001
0.030
b
0.60
0.75
0.89
0.024
0.121
b1
2.90
3.06
3.20
0.115
0.012
c
0.24
0.29
0.35
0.009
0.256
D
6.30
6.50
6.70
0.249
0.138
E
3.30
3.50
3.70
0.130
0.091
e
2.20
2.30
2.40
0.087
e1
0.037
0.85
0.94
1.05
0.033
L
0.20
−−−
−−−
0.008
−−−
L1
1.50
1.75
2.00
0.060
0.069
H
E
6.70
7.00
7.30
0.264
0.276
0°
10°
0°
−
−
q
STYLE 1:
PIN 1.
2.
3.
4.
BASE
COLLECTOR
EMITTER
COLLECTOR
D
b1
4
H
E
E
1
2
3
e1
b
e
A
q
L
L1
C
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
0.08 (0003)
A1
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
mm
inches
SCALE 6:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,
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particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without
limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications
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