V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.54 V at I
F
= 5 A
High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
ITO-220AB
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
2
V20120SG
PIN 1
PIN 2
CASE
3
1
VF20120SG
PIN 1
PIN 2
2
3
1
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB, ITO-220AB, and
TO-262AA package)
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
PIN 3
PIN 3
TYPICAL APPLICATIONS
TO-263AB
K
K
TO-262AA
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters and reverse battery protection.
MECHANICAL DATA
A
NC
1
VB20120SG
NC
A
K
HEATSINK
2
3
VI20120SG
PIN 1
PIN 2
K
Case:
TO-220AB,
ITO-220AB,
TO-263AB
and
TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
per
PIN 3
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 20 A
T
J
max.
Package
Diode variation
20 A
120 V
150 A
0.78 V
150 °C
TO-220AB, ITO-220AB,
TO-263AB, TO-262AA
Single die
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Non-repetitive avalanche energy at T
J
= 25 °C, L = 60 mH
Peak repetitive reverse current
at t
p
= 2 μs, 1 kHz, T
J
= 38 °C ± 2 °C
Voltage rate of change (rated V
R
)
Isolation voltage (ITO-220AB only) from terminal to heatsink
t = 1 min
Operating junction and storage temperature range
SYMBOL
V
RRM
I
F(AV)
I
FSM
E
AS
I
RRM
dV/dt
V
AC
T
J
, T
STG
V20120SG
VF20120SG VB20120SG VI20120SG
120
20
150
80
0.5
10 000
1500
-40 to +150
UNIT
V
A
A
mJ
A
V
V
°C
Revision: 13-Dec-16
Document Number: 88994
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
V
BR
TYP.
120 (minimum)
0.62
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
I
R (2)
0.81
1.20
0.54
0.65
0.78
10
7
-
12
MAX.
-
-
-
1.33
-
-
0.88
-
-
250
25
µA
mA
µA
mA
V
UNIT
V
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Breakdown voltage
I
R
= 1.0 mA
I
F
= 5 A
I
F
= 10 A
Instantaneous forward voltage
I
F
= 20 A
I
F
= 5 A
I
F
= 10 A
I
F
= 20 A
V
R
= 90 V
Reverse current
V
R
= 120 V
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
T
A
= 25 °C
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JC
V20120SG
2.2
VF20120SG VB20120SG
4.2
2.2
VI20120SG
2.2
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-220AB
ITO-220AB
TO-263AB
TO-263AB
TO-262AA
PREFERRED P/N
V20120SG-E3/4W
VF20120SG-E3/4W
VB20120SG-E3/4W
VB20120SG-E3/8W
VI20120SG-E3/4W
UNIT WEIGHT (g)
1.88
1.75
1.38
1.38
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
25
Resistive or Inductive Load
35
D = 0.5
30
V(B,I)20120SG
15
VF20120SG
D = 0.3
D = 0.2
D = 1.0
20
15
T
10
5
0
0
25
50
75
100
125
150
175
0
4
8
12
16
20
24
D = 0.1
D = 0.8
Average Forward Current (A)
Average Power Loss (W)
20
25
10
5
Mounted on Specific Heatsink
0
D = t
p
/T
t
p
Case Temperature (°C)
Average Forward Current (A)
Fig. 1 -
Forward Current Derating Curve
Fig. 2 -
Forward Power Loss Characteristics
Revision: 13-Dec-16
Document Number: 88994
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
10
100
Instantaneous Forward Current (A)
T
A
= 150 °C
Transient Thermal Impedance (°C/W)
Junction to Case
T
A
= 125 °C
10
T
A
= 100 °C
1
T
A
= 25 °C
V(B,I)20120SG
1
0.01
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
t - Pulse Duration (s)
Fig. 3 -
Typical Instantaneous Forward Characteristics
Fig. 6 -
Typical Transient Thermal Impedance
100
10
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
Junction to Case
T
A
= 150 °C
10
T
A
= 125 °C
1
T
A
= 100 °C
0.1
1
0.01
T
A
= 25 °C
0.001
10
20
30
40
50
60
70
80
90
100
VF20120SG
0.1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (s)
Fig. 4 -
Typical Reverse Characteristics
Fig. 7 -
Typical Transient Thermal Impedance
10 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
1000
Junction Capacitance (pF)
100
10
0.1
1
10
100
Reverse
Voltage
(V)
Fig. 5 -
Typical Junction Capacitance
Revision: 13-Dec-16
Document Number: 88994
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
TO-220AB
0.415 (10.54)
0.380 (9.65)
0.161 (4.08)
0.139 (3.53)
0.113 (2.87)
0.103 (2.62)
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
Vishay General Semiconductor
1
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
PIN
2
0.635 (16.13)
0.625 (15.87)
3
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.36)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
45° REF.
0.600 (15.24)
0.580 (14.73)
1
0.560 (14.22)
0.530 (13.46)
0.057 (1.45)
0.045 (1.14)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.076 (1.93) REF.
7° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
PIN
2
3
0.191 (4.85)
0.171 (4.35)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.671 (17.04)
0.651 (16.54)
7° REF.
0.350 (8.89)
0.330 (8.38)
7° REF.
0.110 (2.79)
0.100 (2.54)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 13-Dec-16
Document Number: 88994
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V20120SG-E3, VF20120SG-E3, VB20120SG-E3, VI20120SG-E3
www.vishay.com
Vishay General Semiconductor
TO-262AA
0.411 (10.45)
0.380 (9.65)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.055 (1.40)
0.047 (1.19)
0.950 (24.13)
0.920 (23.37)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
1
PIN
2 3
0.350 (8.89)
0.330 (8.38)
0.510 (12.95)
0.470 (11.94)
0.401 (10.19)
0.381 (9.68)
0.110 (2.79)
0.100 (2.54)
0.560 (14.22)
0.530 (13.46)
0.104 (2.65)
0.096 (2.45)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.022 (0.56)
0.014 (0.35)
TO-263AB
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
NC
K
A
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) MIN.
0.33 (8.38) MIN.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0.15 (3.81) MIN.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 13-Dec-16
Document Number: 88994
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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