IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
19
3.3
13
Single
D
FEATURES
500
3.0
• Dynamic dV/dt rating
• Repetitive avalanche rated
• Surface mount (IRFR420, SiHFR420)
• Straight lead (IRFU420, SiHFU420)
Available
• Available in tape and reel
• Fast switching
• Ease of paralleling
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DPAK
(TO-252)
D
D
IPAK
(TO-251)
G
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The DPAK is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU, SiHFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 W
are possible in typical surface mount applications.
G
S
G
D S
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
DPAK (TO-252)
SiHFR420-GE3
IRFR420PbF
DPAK (TO-252)
SiHFR420TR-GE3
a
IRFR420TRPbF
a
DPAK (TO-252)
SiHFR420TRL-GE3
a
IRFR420TRLPbF
a
DPAK (TO-252)
SiHFR420TRR-GE3
a
IRFR420TRRPbF
a
IPAK (TO-251)
SiHFU420-GE3
IRFU420PbF
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
a
Linear Derating Factor
Linear Derating Factor (PCB
mount)
e
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche
Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 124 mH, R
g
= 25
,
I
AS
= 2.4 A (see fig. 12).
c. I
SD
2.4 A, dI/dt
50 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-1522-Rev. E, 08-Aug-16
Document Number: 91275
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
LIMIT
500
± 20
2.4
1.5
8.0
0.33
0.020
400
2.4
4.2
42
2.5
3.5
-55 to +150
260
W/°C
mJ
A
mJ
W
V/ns
°C
A
UNIT
V
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
Vishay Siliconix
SYMBOL
R
thJA
mount)
a
R
thJA
R
thJC
TYP
-
-
-
MAX.
110
50
3.0
°C/W
UNIT
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient (PCB
Maximum Junction-to-Case (Drain)
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulsed Diode Forward
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
Current
a
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
SYMBOL
V
DS
V
DS
/T
J
V
GS(th)
I
GSS
I
DSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 μA
Reference to 25 °C, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= ± 20 V
V
DS
= 500 V, V
GS
= 0 V
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C
V
GS
= 10 V
I
D
=1.4 A
b
V
DS
= 50 V, I
D
= 1.4 A
MIN.
500
-
2.0
-
-
-
-
1.5
-
-
-
-
TYP.
-
0.59
-
-
-
-
-
-
360
92
37
-
-
-
8.0
8.6
33
16
4.5
7.5
MAX.
-
-
4.0
± 100
25
250
3.0
-
-
-
-
19
3.3
13
-
-
-
-
-
UNIT
V
V/°C
V
nA
μA
S
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
pF
V
GS
= 10 V
I
D
= 2.1 A, V
DS
= 400 V,
see fig. 6 and 13
b
-
-
-
-
-
-
nC
V
DD
= 250 V, I
D
= 2.1 A,
R
g
= 18
,
R
D
= 120
,
see fig. 10
b
Between lead,
6 mm (0.25") from
package and center of
die contact
ns
D
-
-
G
nH
-
S
-
-
-
-
-
-
-
-
260
0.70
2.4
A
8.0
1.6
520
1.4
V
ns
μC
G
S
T
J
= 25 °C, I
S
= 2.4 A, V
GS
= 0 V
b
T
J
= 25 °C, I
F
= 2.1 A, dI/dt = 100 A/μs
b
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
300 μs; duty cycle
2 %.
S16-1522-Rev. E, 08-Aug-16
Document Number: 91275
2
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
Vishay Siliconix
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 4 - Normalized On-Resistance vs. Temperature
S16-1522-Rev. E, 08-Aug-16
Document Number: 91275
3
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
S16-1522-Rev. E, 08-Aug-16
Document Number: 91275
4
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
IRFR420, IRFU420, SiHFR420, SiHFU420
www.vishay.com
Vishay Siliconix
V
DS
V
GS
R
g
R
D
D.U.T.
+
-
V
DD
10 V
Pulse width
≤
1 µs
Duty factor
≤
0.1 %
Fig. 10a - Switching Time Test Circuit
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
Vary t
p
to obtain
required I
AS
R
g
V
DS
t
p
V
DD
D.U.T.
I
AS
10 V
t
p
0.01
Ω
I
AS
Fig. 12b - Unclamped Inductive Waveforms
V
DS
+
-
V
DD
V
DS
Fig. 12a - Unclamped Inductive Test Circuit
S16-1522-Rev. E, 08-Aug-16
Document Number: 91275
5
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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