SUP/SUB15P01-52
Vishay Siliconix
P-Channel 8-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
(W)
0.052 @ V
GS
= –4.5 V
–8
0.070 @ V
GS
= –2.5 V
0.105 @ V
GS
= –1.8 V
I
D
(A)
–15
–10
–10.5
TO-220AB
S
TO-263
G
DRAIN connected to TAB
G
G D S
Top View
SUP15P01-52
SUB15P01-52
P-Channel MOSFET
D S
Top View
D
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy
b
Power Dissipation
L = 0.1 mH
T
C
= 25_C (TO-220AB and TO-263)
T
A
= 25_C (TO-263)
c
T
C
= 25_C
T
C
= 125_C
Symbol
V
DS
V
GS
I
D
I
DM
I
AR
E
AR
P
D
T
J
, T
stg
Limit
–8
"8
–15
–8.7
–25
–10
5
25
d
2.1
–55 to 175
Unit
V
A
mJ
W
_C
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
Junction-to-Lead
Notes:
a. Package limited.
b. Duty cycle
v
1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
www.vishay.com
PCB Mount (TO-263)
c
Symbol
R
thJA
R
thJC
R
thJL
Typical
58
5
16
Maximum
70
6
20
Unit
_C/W
C/W
1
SUP/SUB15P01-52
Vishay Siliconix
SPECIFICATIONS (T
J
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
(BR)DSS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= –250
mA
V
DS
= V
GS
, I
D
= –250
mA
V
DS
= 0 V, V
GS
=
"8
V
V
DS
= –6.4 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 125_C
V
DS
= –6.4 V, V
GS
= 0 V, T
J
= 175_C
On-State Drain Current
a
V
DS
= –5 V, V
GS
= –4.5 V
I
D(on)
V
DS
= –5 V, V
GS
= –2.5 V
V
GS
= –4.5 V, I
D
= –10 A
V
GS
= –4.5 V, I
D
= –10 A, T
J
= 125_C
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= –4.5 V, I
D
= –10 A, T
J
= 175_C
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –2 A
Forward Transconductance
a
g
fs
V
DS
= –5 V, I
D
= –10 A
16
–25
–10
0.043
0.052
0.065
0.075
0.070
0.105
S
W
A
–8
–0.45
"100
–1
–50
–150
m
mA
V
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Dynamic
b
Input Capacitance
Output Capacitance
Reversen Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DD
= –4 V, R
L
= 0.22
W
I
D
]
–15 A, V
GEN
= –4.5 V, R
G
= 2.5
W
V
DS
= –4 V, V
GS
= –4.5 V, I
D
= –10 A
V
GS
= 0 V, V
DS
= –4 V, f = 1 MHz
1300
430
245
10.5
1.6
2
10
16
30
25
20
25
45
40
ns
15
nC
pF
Source-Drain Diode Ratings and Characteristics (T
C
= 25_C)
b
Continuous Current
Pulsed Current
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
I
s
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= –15 A, di/dt = 100 A/ms
m
I
F
= –15 A, V
GS
= 0 V
45
–1
0.023
–15
A
–25
–1.5
75
–1.5
0.056
V
ns
A
mC
Notes:
a. Pulse test; pulse width
v
300
ms,
duty cycle
v
2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
www.vishay.com
2
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
SUP/SUB15P01-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
4.5 V
48
I D – Drain Current (A)
4V
I D – Drain Current (A)
3.5 V
36
3V
24
2.5 V
2V
12
1.5 V
1V
0
0
1
2
3
4
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
16
20
T
C
= –55_C
25_C
Transfer Characteristics
125_C
12
8
4
V
DS
– Drain-to-Source Voltage (V)
V
GS
– Gate-to-Source Voltage (V)
Transconductance
25
T
C
= –55_C
25_C
15
125_C
r DS(on)– On-Resistance (
W
)
0.20
On-Resistance vs. Drain Current
20
g fs – Transconductance (S)
0.16
0.12
V
GS
= 1.8 V
0.08
V
GS
= 2.5 V
V
GS
= 4.5 V
0.04
10
5
0
0
5
10
15
20
25
0.00
0
5
10
15
20
25
V
GS
– Gate-to-Source Voltage (V)
I
D
– Drain Current (A)
Capacitance
2000
8
Gate Charge
1600
C – Capacitance (pF)
C
iss
1200
V GS – Gate-to-Source Voltage (V)
6
V
DS
= 4 V
I
D
= 10 A
4
800
C
oss
400
C
rss
0
0
2
4
6
8
2
0
0
4
8
12
16
20
V
DS
– Drain-to-Source Voltage (V)
Q
g
– Total Gate Charge (nC)
Document Number: 71085
S-20966—Rev. C, 01-Jul-02
www.vishay.com
3
SUP/SUB15P01-52
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Junction Temperature
1.6
V
GS
= 4.5 V
I
D
= 10 A
r DS(on)– On-Resistance (
W
)
(Normalized)
1.4
I S – Source Current (A)
10
T
J
= 25_C
T
J
= 150_C
30
Source-Drain Diode Forward Voltage
1.2
1.0
0.8
0.6
–50
1
–25
0
25
50
75
100
125
150
175
0.0
0.3
0.6
0.9
1.2
1.5
T
J
– Junction Temperature (_C)
V
SD
– Source-to-Drain Voltage (V)
THERMAL RATINGS
Maximum Avalanche and Drain Current
vs. Case Temperature
18
100.0
Safe Operating Area
15
I D – Drain Current (A)
I D – Drain Current (A)
100
ms
10.0
Limited
by r
DS(on)
12
1 ms
10 ms
100 ms
dc, 1 s
9
6
1.0
T
C
= 25_C
Single Pulse
3
0
0
25
50
75
100
125
150
175
T
C
– Case Temperature (_C)
2
1
Duty Cycle = 0.5
Normalized Effective Transient
Thermal Impedance
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.1
0.1
1.0
V
DS
– Drain-to-Source Voltage (V)
10.0
Normalized Thermal Transient Impedance, Junction-to-Case
0.01
10
–4
10
–3
10
–2
10
–1
1
10
Square Wave Pulse Duration (sec)
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Document Number: 71085
S-20966—Rev. C, 01-Jul-02
4
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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