IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BUJ100LR
3 October 2016
NPN power transistor
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)
plastic package.
2. Features and benefits
•
•
•
Fast switching
High voltage capability
Very low switching and conduction losses
3. Applications
•
•
•
•
Compact fluorescent lamps (CFL)
Electronic lighting ballasts
Inverters
Off-line self-oscillating power supplies
4. Pinning information
Table 1. Pinning information
Pin
1
2
3
Symbol Description
B
C
E
base
collector
emitter
321
B
E
sym123
Simplified outline
Graphic symbol
C
TO-92 (SOT54)
5. Ordering information
Table 2. Ordering information
Type number
BUJ100LR
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
WeEn Semiconductors
BUJ100LR
NPN power transistor
6. Limiting values
Table 3. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
10
2
I
C
(A)
10
Parameter
collector-emitter peak
voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
I
C
= 0 A; I(Emitter) = 10 mA
DC;
Fig. 1
DC
T
lead
≤ 25 °C;
Fig. 2
Min
-
-
-
-
-
-
-
-
-
-65
-
Max
700
700
400
9
1
2
0.5
1
2.1
150
150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
003aad545
I
C(max)
1
10
- 1
10
- 2
(1)
DC
10
- 3
1
10
10
2
10
3
V
CL(CE)
(V)
Fig. 1. Forward bias safe operating area
BUJ100LR
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
2 / 11
WeEn Semiconductors
BUJ100LR
NPN power transistor
120
P
der
(%)
80
003aae644
40
0
0
50
100
150
200
T
lead
(°C)
Fig. 2. Normalized total power dissipation as a function of lead temperature
BUJ100LR
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
3 / 11
WeEn Semiconductors
BUJ100LR
NPN power transistor
7. Thermal characteristics
Table 4. Thermal characteristics
Symbol
R
th(j-lead)
R
th(j-a)
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient free air
10
2
Z
th(j-lead)
(K/W)
10
Conditions
Fig. 3
printed circuit board mounted; lead
length 4 mm
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
001aab451
1
P
10
-1
t
tp
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 3. Transient thermal impedance from junction to lead as a function of pulse width
BUJ100LR
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
3 October 2016
4 / 11
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