d. Maximum under steady state conditions is 125 °C/W.
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
www.vishay.com
1
t
≤
5s
Steady
Symbol
R
thJA
R
thJF
Typical
29
13
Maximum
35
16
Unit
°C/W
Si4632DY
Vishay Siliconix
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Symbol
V
DS
ΔV
DS
/T
J
ΔV
GS(th)
/T
J
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
Test Conditions
V
GS
= 0 V, I
D
= 250 µA
I
D
= 250 µA
V
DS
= V
GS
, I
D
= 250 µA
V
DS
= 0 V, V
GS
= ± 16 V
V
DS
= 25 V, V
GS
= 0 V
V
DS
= 25 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
=
≥
5 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 20 A
V
GS
= 4.5 V, I
D
= 15 A
V
DS
= 15 V, I
D
= 20 A
Min.
25
Typ.
Max.
Unit
V
23
-6
1.2
2.6
± 100
1
10
30
0.0022
0.0027
73
3275
7450
990
460
108
49
19
11
1.3
42
115
55
14
20
2.0
65
175
85
23
30
105
90
15
7
70
0.75
44
42
22
22
1.1
70
65
11175
1485
690
161
73
0.0027
0.0033
mV/°C
V
nA
µA
A
Ω
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off DelayTime
Fall Time
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
V
DS
= 15 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 15 V, V
GS
= 10 V, I
D
= 20 A
V
DS
= 15 V, V
GS
= 4.5 V, I
D
= 20 A
f = 1 MHz
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 4.5 V, R
g
= 1
Ω
495
230
pF
nC
Ω
ns
V
DD
= 15 V, R
L
= 1.5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
69
58
8
T
C
= 25 °C
I
S
= 3 A
A
V
ns
nC
ns
I
F
= 13 A, dI/dt = 100 A/µs, T
J
= 25 °C
Notes:
a. Pulse test; pulse width
≤
300 µs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
70
V
GS
= 10
V
thru 4
V
56
0.9
I
D
- Drain C
u
rrent (A)
42
I
D
- Drain C
u
rrent (A)
1.2
0.6
25 °C
0.3
28
3
V
14
T
C
= 125 °C
- 55 °C
0
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
V
DS
- Drain-to-Source
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Output Characteristics
0.0034
8500
Transfer Characteristics
C
iss
R
DS(on)
- On-Resistance (m
Ω)
6800
V
GS
= 4.5
V
0.0026
C - Capacitance (pF)
0.0030
5100
V
GS
= 10
V
0.0022
3400
1700
C
oss
C
rss
0
5
10
15
20
25
0.0018
0
10
20
30
40
50
60
0
I
D
- Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I
D
= 20 A
V
G S
- Gate-to-So
u
rce
V
oltage (
V
)
8
V
DS
= 10
V
R
DS(on)
- On-Resistance
(
N
ormalized)
1.4
1.6
V
DS
- Drain-to-Source
Voltage
(V)
Capacitance
I
D
= 20 A
V
GS
= 10
V
6
V
DS
= 15
V
1.2
V
GS
= 4.5
V
4
V
GS
= 20
V
1.0
2
0.8
0
0
22
44
66
88
110
0.6
- 50
- 25
0
25
50
75
100
125
150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
www.vishay.com
3
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100
R
DS(on)
- Drain-to-So
u
rce On-Resistance ( )
0.030
10
I
S
- So
u
rce C
u
rrent (A)
0.024
1
150 °C
0.018
0.1
0.012
125 °C
0.006
25 °C
0.000
0
1
2
3
4
5
6
7
8
9
10
25 °C
0.01
0.001
0.00
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain
Voltage
(V)
V
GS
- Gate-to-Source
Voltage
(V)
Source-Drain Diode Forward Voltage
0.5
200
On-Resistance vs. Gate-to-Source Voltage
0.2
V
GS(th)
Variance
(V)
160
I
D
= 5 mA
- 0.4
I
D
= 250
µA
- 0.7
Po
w
er (
W
)
- 0.1
120
80
40
- 1.0
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
Time (s)
1
10
T
J
- Temperature (°C)
Threshold Voltage
100
Limited
by
R
DS(on)
*
10
I
D
- Drain C
u
rrent (A)
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
1
100 ms
1s
0.1
T
A
= 25 °C
Single Pulse
0.01
0.1
*
V
GS
10 s
DC
1
10
100
V
DS
- Drain-to-Source
Voltage
(V)
minimum
V
GS
at
which
R
DS(on)
is specified
Safe Operating Area, Junction-to-Ambient
www.vishay.com
4
Document Number: 73786
S11-0209-Rev. C,14-Feb-11
Si4632DY
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
45
40
35
I
D
- Drain C
u
rrent (A)
30
Package Limited
25
20
15
10
5
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
10
2.0
8
1.6
Po
w
er (W)
6
Po
w
er (W)
1.2
4
0.8
2
0.4
0
0
25
50
75
100
125
150
0.0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
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