• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TO-220AB
APPLICATIONS
• Power supply
- Secondary synchronous rectification
• DC/DC converter
• Power tools
Top View
G
D
S
G
D
• Motor drive switch
• DC/AC inverter
• Battery management
S
N-Channel MOSFET
Ordering Information:
SUP50020EL-GE3 (lead (Pb)-free and halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy
a
Maximum Power Dissipation
a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T
C
= 25 °C
T
C
= 125 °C
T
C
= 25 °C
T
C
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
T
J
, T
stg
LIMIT
60
± 20
120
d
120
d
300
75
281
375
b
125
b
-55 to +175
mJ
W
°C
A
UNIT
V
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount)
c
Junction-to-Case (Drain)
Notes
a. Duty cycle
≤
1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
d. Package limited.
SYMBOL
R
thJA
R
thJC
LIMIT
40
0.4
UNIT
°C/W
S15-1868-Rev. A, 10-Aug-15
Document Number: 68273
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50020EL
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
V
DS
V
GS(th)
I
GSS
V
GS
= 0 V, I
D
= 250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= 0 V, V
GS
= ± 20 V
V
DS
= 60 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 °C
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 °C
On-State Drain Current
a
Drain-Source On-State Resistance
a
Forward Transconductance
a
Dynamic
b
Vishay Siliconix
SYMBOL
TEST CONDITIONS
MIN.
60
1.2
-
-
-
-
120
-
-
-
-
V
GS
= 0 V, V
DS
= 30 V, f = 1 MHz
-
-
-
V
DS
= 30 V, V
GS
= 10 V, I
D
= 20 A
-
-
f = 1 MHz
0.32
-
V
DD
= 30 V, R
L
= 5
Ω
I
D
≅
10 A, V
GEN
= 10 V, R
g
= 1
Ω
-
-
-
-
I
F
= 10 A, V
GS
= 0 V
-
-
I
F
= 39 A, di/dt = 100 A/μs
-
-
TYP.
-
-
-
-
-
-
-
0.0019
0.0023
145
11 113
4625
475
126
31.2
7.1
1.6
15
20
55
11
-
0.8
120
5
0.287
MAX.
-
2.5
± 250
1
150
5
-
0.0023
0.0028
-
-
-
-
-
-
-
3.2
30
40
100
20
300
1.5
180
10
0.430
A
V
ns
A
μC
ns
Ω
nC
pF
UNIT
V
nA
μA
mA
A
Ω
S
I
D(on)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
V
DS
≥
10 V, V
GS
= 10 V
V
GS
= 10 V, I
D
= 30 A
V
GS
= 4.5 V, I
D
= 20 A
V
DS
= 15 V, I
D
= 30 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
c
Gate-Source Charge
c
Gate-Drain Charge
c
Gate Resistance
Turn-On Delay Time
c
Rise Time
c
Turn-Off Delay Time
c
Fall Time
c
Pulsed Current (t = 100 μs)
Forward Voltage
a
Reverse Recovery Time
Peak Reverse Recovery Charge
Reverse Recovery Charge
Drain-Source Body Diode Ratings and Characteristics
b
(T
C
= 25 °C)
Notes
a. Pulse test; pulse width
≤
300 μs, duty cycle
≤
2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S15-1868-Rev. A, 10-Aug-15
Document Number: 68273
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50020EL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
200
V
GS
= 10 V thru 4 V
Vishay Siliconix
100
80
I
D
- Drain Current (A)
I
D
- Drain Current (A)
150
T
C
= 25
°C
60
100
40
T
C
= 125
°C
50
V
GS
=3V
20
T
C
= - 55
°C
0
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
0
0
1
2
3
4
V
GS
-
Gate-to-Source
Voltage (V)
Output Characteristics
200
Transfer Characteristics
0.0030
g
fs
- Transconductance (S)
R
DS(on)
- On-Resistance (Ω)
150
T
C
= 25
°C
0.0025
V
GS
=4.5V
0.0020
V
GS
= 10 V
T
C
= - 55
°C
100
T
C
= 125
°C
50
0.0015
0
0
6
12
18
24
30
I
D
- Drain Current (A)
0.0010
0
20
40
60
80
100
I
D
- Drain Current (A)
Transconductance
14000
C
iss
10500
C - Capacitance (pF)
On-Resistance vs. Drain Current
10
I
D
= 20 A
V
GS
-
Gate-to-Source
Voltage (V)
8
V
DS
= 15 V
6
V
DS
= 48 V
4
V
DS
= 30 V
7000
C
oss
3500
C
rss
0
0
15
30
45
V
DS
- Drain-to-Source Voltage (V)
60
2
0
0
35
70
105
140
Q
g
- Total
Gate
Charge (nC)
Capacitance
S15-1868-Rev. A, 10-Aug-15
Gate Charge
Document Number: 68273
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50020EL
www.vishay.com
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
1.90
2.4
I
D
= 250 μA
R
DS(on)
- On-Resistance (Normalized)
1.65
V
GS
= 10 V, I
D
= 30 A
Vishay Siliconix
2
1.40
V
GS(th)
(V)
V
GS
= 4.5 V, I
D
= 20 A
1.6
1.15
1.2
0.90
0.8
0.65
-50
-25
0
25
50
75
100 125
T
J
- Junction Temperature (°C)
150
175
0.4
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Junction Temperature
0.006
I
D
= 30 A
V
DS
(V) Drain -to-Source Voltage
Threshold Voltage
74
I
D
= 250 μA
72
R
DS(on)
- On-Resistance (Ω)
0.004
T
J
= 125 °C
T
J
= 25 °C
70
68
0.002
66
0
0
1.5
3
4.5
6
7.5
V
GS
-
Gate
-to -Source Voltage (V)
9
64
- 50
- 25
0
25
50
75
100
125
150
175
T
J
- Temperature (°C)
On-Resistance vs. Gate-to-Source Voltage
100
Drain Source Breakdown vs. Junction Temperature
312
260
I
S
-
Source
Current (A)
T
J
= 150
°C
I
D
- Drain Current (A)
10
208
156
1
T
J
= 25
°C
104
52
0.1
0.0
0.2
0.4
0.6
0.8
1.0
V
SD
-
Source-
to- Drain Voltage (V)
1.2
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature (°C)
Source Drain Diode Forward Voltage
S15-1868-Rev. A, 10-Aug-15
Current De-rating
Document Number: 68273
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SUP50020EL
www.vishay.com
THERMAL RATINGS
(T
A
= 25 °C, unless otherwise noted)
1000
I
DM
Limited
100 us
100
I
D
Limited
Vishay Siliconix
100
I
D
- Drain Current (A)
10
1
Limited by R
DS(on)
*
10 ms
100 ms
DC
I
DAV
(A)
1 ms
25 °C
150 °C
0.1
T
C
= 25
°C
Single
Pulse
BVDSS Limited
0.01
0.1
1
10
100
V
DS
- Drain- to-
Source
Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is
specified
10
0.00001
0.0001
Time (s)
0.001
0.01
Safe Operating Area
1
Single Pulse Avalanche Current Capability vs. Time
中风发生时，一切都是以秒来计算的。延误治疗可能导致大脑重大损伤。伦敦大学医学院的一位博士Alistair McEwan已经获得行为医学研究所(Action Medical Research)的同意，为急救人员开发一种无线诊断系统来减少时间延误。感谢抗血栓药物，一些病人在病情发作的三个小时之内可以完全恢复。但出血也会导致中风。医生在治疗之前需要确定发病原因，因为不适当的服用抗血栓药物会加重损害。...[详细]
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