NLU1GT125
Non-Inverting 3-State
Buffer, TTL Level
LSTTL−Compatible Inputs
The NLU1GT125 MiniGatet is an advanced CMOS high−speed
non−inverting buffer in ultra−small footprint.
The NLU1GT125 requires the 3−state control input OE to be set
High to place the output in the high impedance state.
The device input is compatible with TTL−type input thresholds and
the output has a full 5.0 V CMOS level output swing.
The NLU1GT125 input and output structures provide protection
when voltages up to 7.0 V are applied, regardless of the supply voltage.
Features
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MARKING
DIAGRAMS
UDFN6
1.2 x 1.0
CASE 517AA
7M
•
•
•
•
•
•
•
•
•
High Speed: t
PD
= 3.8 ns (Typ) @ V
CC
= 5.0 V
Low Power Dissipation: I
CC
= 1
mA
(Max) at T
A
= 25°C
TTL−Compatible Input: V
IL
= 0.8 V; V
IH
= 2.0 V
CMOS−Compatible Output:
V
OH
> 0.8 V
CC
; V
OL
< 0.1 V
CC
@ Load
Power Down Protection Provided on inputs
Balanced Propagation Delays
Ultra−Small Packages
NLV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These are Pb−Free Devices
1
UDFN6
1.0 x 1.0
CASE 517BX
1
UDFN6
1.45 x 1.0
CASE 517AQ
1
7
M
= Device Marking
= Date Code
LM
DM
OE
1
6
V
CC
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of
this data sheet.
IN A
2
5
NC
GND
3
4
OUT Y
Figure 1. Pinout
(Top View)
OE
IN A
OUT Y
Figure 2. Logic Symbol
FUNCTION TABLE
Input
A
L
H
X
OE
L
L
H
Output
Y
L
H
Z
PIN ASSIGNMENT
1
2
3
4
5
6
OE
IN A
GND
OUT Y
NC
V
CC
©
Semiconductor Components Industries, LLC, 2016
July, 2016
−
Rev. 6
1
Publication Order Number:
NLU1GT125/D
NLU1GT125
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
O
I
CC
I
GND
T
STG
T
L
T
J
MSL
F
R
I
LATCHUP
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Moisture Sensitivity
Flammability Rating
Oxygen Index: 28 to 34
V
IN
< GND
V
OUT
< GND
Parameter
Value
−0.5
to +7.0
−0.5
to +7.0
−0.5
to +7.0
−20
±20
±12.5
±25
±25
−65
to +150
260
150
Level 1
UL 94 V−0 @ 0.125 in
±500
mA
Unit
V
V
V
mA
mA
mA
mA
mA
°C
°C
°C
Latchup Performance Above V
CC
and Below GND at 125°C (Note 2)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
OUT
T
A
Dt/DV
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
V
CC
= 3.3 V
±
0.3 V
V
CC
= 5.0 V
±
0.5 V
Parameter
Min
1.65
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
100
20
Unit
V
V
V
°C
ns/V
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2
NLU1GT125
DC ELECTRICAL CHARACTERISTICS
T
A
= 25
5C
Symbol
V
IH
V
IL
V
OH
Parameter
Low−Level Input
Voltage
Low−Level Input
Voltage
High−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OH
=
−50
mA
V
IN
= V
IH
or V
IL
I
OH
=
−4
mA
I
OH
=
−8
mA
V
OL
Low−Level Output
Voltage
V
IN
= V
IH
or V
IL
I
OL
= 50
mA
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
I
IN
I
CC
I
CCT
Input Leakage
Current
Quiescent Supply
Current
Quiescent Supply
Current
Output Leakage
Current
3−State Leakage
Current
0
v
V
IN
v
5.5 V
0
v
V
IN
v
V
CC
V
IN
= 3.4 V
Other Input: V
CC
or GND
V
OUT
= 5.5 V
V
IN
= V
IH
or V
IL
V
OUT
= V
CC
or
GND
Conditions
V
CC
(V)
3.0
4.5 to 5.5
3.0
4.5 to 5.5
3.0
4.5
3.0
4.5
3.0
4.5
3.0
4.5
0 to 5.5
5.5
5.5
2.9
4.4
2.58
3.94
0
0
0.1
0.1
0.36
0.36
±0.1
1.0
1.35
3.0
4.5
Min
1.4
2.0
0.53
0.8
2.9
4.4
2.48
3.80
0.1
0.1
0.44
0.44
±1.0
20
1.50
Typ
Max
T
A
=
+855C
Min
1.4
2.0
0.53
0.8
2.9
4.4
2.34
3.66
0.1
0.1
0.52
0.52
±1.0
40
1.65
mA
mA
mA
V
Max
T
A
=
−555C
to +1255C
Min
1.4
2.0
0.53
0.8
Max
Unit
V
V
V
I
OPD
I
OZ
0.0
0.0
0.5
±0.25
5.0
±2.5
10
±2.5
mA
mA
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
V
CC
(V)
3.0 to 3.6
4.5 to 5.5
t
PZL
,
t
PZH
Output Enable Time, OE to Y
(Figures 4 and 6)
3.0 to 3.6
4.5 to 5.5
t
PLZ
,
t
PHZ
Output Disable Time, OE to Y
(Figures 4 and 6)
3.0 to 3.6
4.5 to 5.5
C
IN
C
OUT
Input Capacitance
3−State Output Capacitance
(Output in High Impedance
State)
Power Dissipation
Capacitance (Note 3)
5.0
Test
Condition
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
C
L
= 15 pF
C
L
= 50 pF
T
A
= 25
5C
Min
Typ
5.6
8.1
3.8
5.3
5.4
7.9
3.6
5.1
6.5
8.0
4.8
7.0
4
6
Max
8.0
11.5
5.5
7.5
8.0
11.5
5.1
7.1
9.7
13.2
6.8
8.8
10
T
A
=
+855C
Min
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
Max
9.5
13.0
6.5
8.5
9.5
13.0
6.0
8.0
11.5
15.0
8.0
10.0
10
T
A
=
−555C
to +1255C
Min
Max
12.0
16.0
8.5
10.5
11.5
15.0
7.5
9.5
14.5
18.5
10.0
12.0
10.0
pF
pF
ns
ns
Unit
ns
Symbol
t
PLH
,
t
PHL
Parameter
Propagation Delay, A to
Y
(Figures 3 and 5)
C
PD
14
pF
3. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation I
CC(OPR)
= C
PD
•
V
CC
•
f
in
+ I
CC
. C
PD
is used to determine the no−load
dynamic power consumption: P
D
= C
PD
•
V
CC2
•
f
in
+ I
CC
•
V
CC.
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3
NLU1GT125
SWITCHING WAVEFORMS
50%
t
PZL
Y
t
PLZ
V
CC
GND
HIGH
IMPEDANCE
V
OL
+ 0.3V
V
OH
−
0.3V
HIGH
IMPEDANCE
OE
V
CC
A
t
PLH
50% V
CC
Y
Y
50%
t
PHL
GND
50% V
CC
t
PZH
t
PHZ
50% V
CC
Figure 3. Switching Waveforms
Figure 4.
TEST POINT
OUTPUT
DEVICE
UNDER
TEST
C
L
*
DEVICE
UNDER
TEST
TEST POINT
OUTPUT
1 kW
CONNECT TO V
CC
WHEN
TESTING t
PLZ
AND t
PZL.
CONNECT TO GND
WHEN
TESTING t
PHZ
AND t
PZH.
C
L
*
*Includes all probe and jig capacitance
*Includes all probe and jig capacitance
Figure 5. Test Circuit
Figure 6. Test Circuit
INPUT
Figure 7. Input Equivalent Circuit
ORDERING INFORMATION
Device
NLU1GT125MUTCG
NLU1GT125AMUTCG,
NLVU1GT125AMUTCG*
NLU1GT125CMUTCG
Package
UDFN6, 1.2 x 1.0, 0.4P
(Pb−Free)
UDFN6, 1.45 x 1.0, 0.5P
(Pb−Free)
UDFN6, 1.0 x 1.0, 0.35P
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NLV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP
Capable.
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4
NLU1GT125
PACKAGE DIMENSIONS
UDFN6, 1.2x1.0, 0.4P
CASE 517AA
ISSUE C
EDGE OF PACKAGE
D
A
B
L1
PIN ONE
REFERENCE
2X
E
0.10 C
2X
DETAIL A
Bottom View
(Optional)
EXPOSED Cu
MOLD CMPD
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.25 AND
0.30 mm FROM TERMINAL.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
DIM
A
A1
A3
b
D
E
e
L
L1
L2
MILLIMETERS
MIN
MAX
0.45
0.55
0.00
0.05
0.127 REF
0.15
0.25
1.20 BSC
1.00 BSC
0.40 BSC
0.30
0.40
0.00
0.15
0.40
0.50
0.10 C
(A3)
A
A1
10X
0.08 C
SIDE VIEW
A1
5X
1
3
SEATING
PLANE
C
L
L2
6X
b
0.10 C A B
0.05 C
NOTE 3
6
4
e
BOTTOM VIEW
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5
ÉÉÉ
ÉÉÉ
DETAIL B
Side View
(Optional)
0.40
PITCH
0.10 C
ÉÉ
ÉÉ
TOP VIEW
A3
MOUNTING FOOTPRINT*
0.42
6X
0.22
6X
1.07
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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