NVD5862N
Power MOSFET
Features
60 V, 5.7 mW, 98 A, Single N−Channel
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V
(BR)DSS
60 V
R
DS(on)
5.7 mW @ 10 V
I
D
98 A
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Cur-
rent R
qJC
(Note 1)
Power Dissipation R
qJC
(Note 1)
Continuous Drain Cur-
rent R
qJA
(Notes 1 & 2)
Power Dissipation R
qJA
(Notes 1 & 2)
Pulsed Drain Current
Current Limited by
Package (Note 3)
T
C
= 25°C
Steady
State
T
C
= 100°C
T
C
= 25°C
T
C
= 100°C
T
A
= 25°C
Steady
State
T
A
= 100°C
T
A
= 25°C
T
A
= 100°C
T
A
= 25°C, t
p
= 10
ms
T
A
= 25°C
I
DM
I
Dmaxpkg
T
J
, T
stg
I
S
E
AS
P
D
I
D
P
D
Symbol
V
DSS
V
GS
I
D
Value
60
"20
98
69
115
58
18
13
4.1
2.0
367
60
−55
to
175
96
205
A
A
°C
A
mJ
W
A
1 2
4
W
Unit
V
V
A
G
S
N−Channel
D
3
DPAK
CASE 369C
(Surface Mount)
STYLE 2
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L(pk)
= 37 A, L = 0.3 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
AYWW
V58
62NG
2
Drain 3
1
Gate Source
A
= Assembly Location*
Y
= Year
WW
= Work Week
V5862N = Device Code
G
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case
−
Steady State (Drain)
Junction−to−Ambient
−
Steady State (Note 2)
Symbol
R
qJC
R
qJA
Value
1.3
37
Unit
°C/W
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm
2
, 2 oz. Cu pad.
3. Continuous DC current rating. Maximum current for pulses as long as 1
second are higher but are dependent on pulse duration and duty cycle.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
May, 2017
−
Rev. 3
1
Publication Order Number:
NVD5862N/D
NVD5862N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
gFS
V
GS
= 10 V, I
D
= 48 A
V
DS
= 15 V, I
D
= 10 A
V
GS
= 0 V,
V
DS
= 60 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
60
47
1.0
100
±100
2.0
−9.7
4.4
18
5.7
4.0
nA
V
mV/°C
mW
S
V
mV/°C
mA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
t
d(on)
t
r
t
d(off)
t
f
V
SD
t
RR
ta
tb
Q
RR
V
GS
= 0 V, dIs/dt = 100 A/ms,
I
S
= 48 A
T
J
= 25°C
T
J
= 100°C
V
GS
= 10 V, V
DD
= 48 V,
I
D
= 48 A, R
G
= 2.5
W
18
70
35
60
ns
C
iss
C
oss
C
rss
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
R
G
V
GS
= 10 V, V
DS
= 48 V,
I
D
= 48 A
V
GS
= 0 V, f = 1.0 MHz,
V
DS
= 25 V
5050
500
300
82
5.2
24
27
0.6
W
6000
600
420
nC
pF
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
GS
= 0 V,
I
S
= 48 A
0.9
0.75
38
20
18
40
nC
ns
1.2
V
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Order Number
NVD5862NT4G
NVD5862NT4G−VF01
Package
DPAK
(Pb−Free)
DPAK
(Pb−Free)
Shipping
†
2500 / Tape & Reel
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVD5862N
TYPICAL CHARACTERISTICS
200
I
D
, DRAIN CURRENT (A)
160
6.0 V
120
80
40
0
5.8 V
5.6 V
200
T
J
= 25°C V
GS
= 10 V
6.2 V
I
D
, DRAIN CURRENT (A)
180
160
140
120
100
80
60
40
20
0
1
2
3
4
5
0
3
T
J
= 125°C
4
5
T
J
=
−55°C
6
7
T
J
= 25°C
V
DS
≥
5 V
5.2 V
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
0.005
0.000
I
D
= 45 A
T
J
= 25°C
0.006
V
GS
= 10 V
T
J
= 25°C
0.005
0.004
4
5
6
7
8
9
10
0.003
10
20
30
40
50
60
70
80
90
100
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
Figure 4. On−Resistance vs. Drain Current
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
I
D
= 45 A
V
GS
= 10 V
100000
V
GS
= 0 V
I
DSS
, LEAKAGE (nA)
T
J
= 150°C
10000
T
J
= 125°C
175
1000
10
20
30
40
50
60
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
www.onsemi.com
3
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
NVD5862N
TYPICAL CHARACTERISTICS
6000
5000
C, CAPACITANCE (pF)
4000
3000
2000
1000
0
0
C
rss
10
20
30
40
50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
60
C
oss
C
iss
10
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
9
8
7
6
5
4
3
2
1
0
0
10
V
DS
= 48 V
I
D
= 48 A
T
J
= 25°C
20
30
40
50
60
70
Q
g
, TOTAL GATE CHARGE (nC)
80
90
Q
gs
Q
gd
Q
T
V
GS
= 0 V
T
J
= 25°C
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
1000
I
S
, SOURCE CURRENT (A)
V
DD
= 48 V
I
D
= 48 A
V
GS
= 10 V
100
t, TIME (ns)
t
r
t
f
t
d(off)
10
t
d(on)
100
80
60
40
20
0
0.50
V
GS
= 0 V
T
J
= 25°C
1
1
10
R
G
, GATE RESISTANCE (W)
100
0.60
0.70
0.80
0.90
1.00
1.10
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1000
AVALANCHE ENERGY (mJ)
1 ms
10 ms
dc
100
ms
10
ms
225
200
175
150
125
100
75
50
25
10
100
0
25
Figure 10. Diode Forward Voltage vs. Current
I
D
= 37 A
I
D
, DRAIN CURRENT (A)
100
10
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
1
0.1
50
75
100
125
150
175
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
T
J
, STARTING JUNCTION TEMPERATURE
www.onsemi.com
4
NVD5862N
TYPICAL CHARACTERISTICS
10
R
qJC(t)
(°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
