STP08IE120F4
Emitter Switched Bipolar Transistor
ESBT 1200 V - 8 A - 0.10
Ω
General features
V
CS(ON)
0.8 V
■
I
C
8A
R
CS(ON)
High voltage / high current Cascode
configuration
Low equivalent on resistance
very fast-switch up to 150 kHz
Squared RBSOA up to 1200V
Very low C
iss
driven by R
G
= 47Ω
Very low turn-off cross over time
■
■
■
■
■
Applications
■
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(s
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P
t(
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Order codes
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b
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Aux SMPS for three phase mains
Description
The STP08IE120F4 is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
Part Number
Marking
STP08IE120F4
P08IE120F4
November 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
W
0.10
b
O
Internal schematic diagrams
so
te
le
Package
TO220FP-4L
Rev 1
®
Preliminary Data
TO220FP-4L
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Packing
Tube
1/11
www.st.com
11
STP08IE120F4
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
2.2
Electrical characteristics (curves)
........................... 5
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3
4
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
-
et
l
)
(s
so
b
ct
u
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-O
ro
s)
P
t(
te
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le
o
od
r
s
P
b
O
te
le
so
b
O
b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
2/11
STP08IE120F4
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
CS(SS)
V
BS(OS)
V
SB(OS)
V
GS
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
J
Absolute maximum rating
Parameter
Collector-source voltage (V
BS
= V
GS
= 0 V)
Base-source voltage (I
C
= 0, V
GS
= 0 V)
Source-base voltage (I
C
= 0, V
GS
= 0 V)
Gate-source voltage
Collector current
Collector peak current (t
P
< 5ms)
Base current
Base peak current (t
P
< 5ms)
Total dissipation at T
c
= 25°C
Storage temperature
Max. operating junction temperature
Value
1200
30
17
Unit
V
V
V
±
17
8
24
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
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Table 2.
Thermal data
Symbol
R
thj-case
Parameter
Thermal resistance junction-case
b
O
so
te
le
__max
r
P
d
o
6
uc
s)
t(
V
A
A
12
21
P
e
od
r
-40 to 150
150
s)
t(
uc
A
A
W
°C
°C
Value
6
Unit
°C/W
3/11
Electrical characteristics
STP08IE120F4
2
Electrical characteristics
(T
case
= 25°C unless otherwise specified)
Table 3.
Symbol
I
CS(SS)
I
BS(OS)
I
SB(OS)
IGS(OS)
Electrical characteristics
Parameter
Collector-source current
(V
BS
= V
GS
= 0)
Base-source current
(I
C
= 0, V
GS
= 0)
Source-base current
(I
C
= 0, V
GS
= 0)
Gate-source leakage
Collector-source ON
voltage
DC current gain
Test Conditions
V
CE
= 1200V
V
BS(OS)
= 30V
V
SB(OS)
= 17V
V
GS
=
±
17V
V
GS
= 10V
_I
C
= 8A
V
GS
= 10V_ I
C
= 4A
V
GS
= 10V_ I
C
= 8A
V
GS
= 10V_ I
C
= 4A_
Min.
Typ. Max. Unit
100
10
µA
µA
V
CS(ON)
h
FE
V
BS(ON)
V
GS(th)
C
ISS
I
B
= 1.6A
I
B
= 0.4A
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Gate threshold voltage
Input capacitance
V
GS
= 0
Q
GS(tot)
t
s
t
f
Gate-source charge
INDUCTIVE LOAD
Storage time
Fall time
INDUCTIVE LOAD
Storage time
Fall time
V
GS
= 10V
I
C
= 4A
V
Clamp
= 960V
t
p
= 4
µs
I
C
= 4A
t
s
t
f
t
p
= 4
µs
V
CSW
Maximum collector-
source voltage switched
without snubber
Collector-source
dynamic voltage
(500ns)
Collector-source
dynamic voltage
Base Source ON voltage
V
GS
= 10V_ I
C
= 8A I
B
= 1.6A
V
GS
= 10V_ I
C
= 4A_ I
B
= 0.4A
V
BS
= V
GS
______I
B
= 250
µ
A
V
CS
= 25V
______f
= 1MHz
b
O
so
te
le
ro
P
5
7
2
uc
d
0.8
0.5
1.5
1.5
3
550
26
670
15
s)
t(
100
100
1
1.2
µA
nA
V
V
V
CS
= 1V
V
CS
= 1V
P
e
od
r
s)
t(
uc
4
V
V
V
pF
nC
ns
ns
I
B
= 0.8A V
GS
= 10V
R
G
= 47Ω
I
B
= 0.4A V
GS
= 10V
V
Clamp
= 960V
R
G
= 47Ω
340
10.2
ns
ns
R
G
= 47Ω
h
FE
= 5A I
C
= 8A
1200
V
V
CC
= V
Clamp
= 400V V
GS
= 10V
I
C
= 4A
I
B
= 0.8A
5.75
V
t
peak
= 500
ns
I
C
= 4A
I
B
= 0.8A
V
CS(dyn)
R
G
=
47Ω
I
Bpeak
= 4A
R
G
=
47Ω
I
Bpeak
= 4A
V
CC
= V
Clamp
= 400V V
GS
= 10V
3.35
V
t
peak
= 500
ns
V
CS(dyn)
(1 µs)
4/11
STP08IE120F4
Electrical characteristics
2.1
Electrical characteristics (curves)
Figure 1.
Output characteristics
Figure 2.
DC current gain
Figure 3.
Collector-source On voltage
Figure 4.
Collector-source On voltage
-
et
l
)
(s
so
b
ct
u
d
-O
ro
s)
P
t(
te
uc
le
o
od
r
s
P
b
O
te
le
so
b
O
Figure 5.
Base-source On voltage
Figure 6.
b
O
so
te
le
ro
P
uc
d
s)
t(
P
e
od
r
s)
t(
uc
Base-source On voltage
5/11
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