®
STPS130
POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
I
F(AV)
V
RRM
T
j
(max)
V
F
(max)
FEATURES AND BENEFITS
■
■
1A
30 V
150°C
0.46 V
SMA
(JEDEC DO-214AC)
STPS130A
SMB
(JEDEC DO-214AA)
STPS130U
■
■
Very low forward voltage drop for less power
dissipation
Optimized conduction/reverse losses trade-off
which means the highest yield in the
applications
Surface mount miniature packages
Avalanche capability specified
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in SMA and SMB, this device is
especially intended for use in parallel with
MOSFETs in synchronous rectification and low
voltage secondary rectification.
Table 3: Absolute Ratings
(limiting values)
Symbol
Parameter
V
RRM
Repetitive peak reverse voltage
I
F(RMS)
RMS forward voltage
I
F(AV)
I
FSM
I
RRM
I
RSM
P
ARM
T
stg
T
j
dV/dt
Average forward current
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Table 2: Order Codes
Part Number
STPS130A
STPS130U
Marking
S130
G12
Value
30
7
T
L
= 130°C
δ
= 0.5
tp = 10ms sinusoidal
tp = 2µs F = 1kHz square
tp = 100µs square
tp = 1µs Tj = 25°C
1
45
1
1
1200
-65 to + 150
150
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
1
dPt ot
-
* : --------------- > ------------------------- thermal runaway condition for a diode on its own heatsink
Rth
(
j
–
a
)
dTj
August 2004
REV. 5
1/7
STPS130
Table 4: Thermal Resistance
Symbol
R
th(j-l)
Junction to lead
Parameter
SMA
SMB
Value
30
23
Unit
°C/W
Table 5: Static Electrical Characteristics
Symbol
I
R
*
Tests conditions
T
j
= 25°C
V
R
= V
RRM
Reverse leakage current
T
j
= 125°C
T
j
= 25°C
V
F
**
Forward voltage drop
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Pulse test:
** tp = 5 ms,
δ
< 2%
* tp = 380 µs,
δ
< 2%
Parameter
Min.
Typ
1.5
0.37
0.45
Max.
10
10
0.55
0.46
0.63
0.55
Unit
µA
mA
I
F
= 1A
I
F
= 2A
V
To evaluate the conduction losses use the following equation: P = 0.37 x I
F(AV)
+ 0.090 I
F (RMS)
2
Figure 1: Average forward power dissipation
versus average forward current
P
F(AV)
(W)
0.6
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
I
F(AV)
(A)
1.2
δ
= 0.05
0.5
0.4
0.3
0.2
δ
= 0.1
δ
= 0.2
δ
= 0.5
1.0
R
th(j-a)
=R
th(j-I)
δ
=1
0.8
R
th(j-a)
=100°C/W
0.6
0.4
T
0.1
T
0.2
I
F(AV)
(A)
0.0
0.0
0.2
0.4
0.6
0.8
δ
=tp/T
1.0
tp
0.0
1.2
δ
=tp/T
0
25
tp
50
T
amb
(°C)
75
100
125
150
Figure 3: Normalized avalanche
derating versus pulse duration
P
ARM
(t
p
)
P
ARM
(1µs)
1
power
Figure 4: Normalized avalanche
derating versus junction temperature
P
ARM
(t
p
)
P
ARM
(25°C)
1.2
1
power
0.1
0.8
0.6
0.01
0.4
0.2
0.001
0.01
0.1
1
t
p
(µs)
10
100
1000
T
j
(°C)
0
25
50
75
100
125
150
2/7
STPS130
Figure 5: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMA)
I
M
(A)
8
7
6
5
4
3
T
a
=100°C
T
a
=50°C
T
a
=75°C
Figure 6: Non repetitive surge peak forward
current versus overload duration (maximum
values) (SMB)
I
M
(A)
8
7
6
5
T
a
=50°C
4
T
a
=75°C
3
I
M
t
2
1
0
1.0E-3
2
I
M
T
a
=100°C
t
1
δ
=0.5
t(s)
1.0E-2
1.0E-1
1.0E+0
0
1.0E-3
δ
=0.5
t(s)
1.0E-2
1.0E-1
1.0E+0
Figure 7: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMA)
Z
th(j-c)
/R
th(j-c)
1.0
Figure 8: Relative variation of thermal
impedance junction to ambient versus pulse
duration (epoxy printed circuit board,
e(Cu)=35µm, recommended pad layout) (SMB)
Z
th(j-c)
/R
th(j-c)
1.0
0.8
0.8
0.6
δ
= 0.5
0.6
δ
= 0.5
0.4
δ
= 0.2
0.4
T
0.2
δ
= 0.2
δ
= 0.1
Single pulse
T
0.2
δ
= 0.1
Single pulse
t
p
(s)
1E-1
1E+0
1E+1
0.0
1E-2
δ
=tp/T
1E+2
tp
1E+3
t
p
(s)
1.0E-1
1.0E+0
1.0E+1
0.0
1.0E-2
δ
=tp/T
1.0E+2
tp
1.0E+3
Figure 9: Reverse leakage current versus
reverse voltage applied (typical values)
I
R
(µA)
5E+3
1E+3
T
j
=125°C
Figure 10: Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
500
F=1MHz
T
j
=25°C
200
1E+2
T
j
=70°C
100
1E+1
50
1E+0
T
j
=25°C
20
1E-1
0
5
10
V
R
(V)
15
20
25
30
V
R
(V)
10
1
2
5
10
20
30
3/7
STPS130
Figure 11: Forward voltage drop versus
forward current (maximum values)
Figure 12: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMA)
R
th(j-a)
(°C/W)
120
P=1.5W
I
FM
(A)
10.00
100
1.00
T
j
=75°C
80
T
j
=25°C
T
j
=125°C
60
40
20
0.10
V
FM
(V)
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
S(Cu)(cm²)
0
0
1
2
3
4
5
Figure 13: Thermal resistance junction to
ambient versus copper surface under each
lead (Epoxy printed circuit board FR4, copper
thickness: 35µm) (SMB)
R
th(j-a)
(°C/W)
140
120
100
80
60
40
20
P=1.5W
S(Cu)(cm²)
0
0
1
2
3
4
5
4/7
STPS130
Figure 14: SMA Package Mechanical Data
DIMENSIONS
E1
REF.
Millimeters
Min.
Max.
2.03
0.20
1.65
0.41
5.60
4.60
2.95
1.60
Inches
Min.
0.075
0.002
0.049
0.006
0.189
0.156
0.089
0.030
Max.
0.080
0.008
0.065
0.016
0.220
0.181
0.116
0.063
D
A1
A2
b
1.90
0.05
1.25
0.15
4.80
3.95
2.25
0.75
E
c
A1
E
E1
b
C
L
A2
D
L
Figure 15: SMA Foot Print Dimensions
(in millimeters)
1.65
1.45
2.40
1.45
5/7
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