IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
BT151S series L and R
Thyristors
Rev. 05 — 9 October 2006
Product data sheet
1. Product profile
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
I
High thermal cycling performance
I
High bidirectional blocking voltage
capability
I
Surface-mounted package
1.3 Applications
I
Motor control
I
Ignition circuits
I
Static switching
I
Protection circuits
1.4 Quick reference data
I
I
I
I
I
I
V
DRM
≤
500 V (BT151S-500L/R)
V
RRM
≤
500 V (BT151S-500L/R)
V
DRM
≤
650 V (BT151S-650L/R)
V
RRM
≤
650 V (BT151S-650L/R)
V
DRM
≤
800 V (BT151S-800R)
V
RRM
≤
800 V (BT151S-800R)
I
I
I
I
I
I
TSM
≤
120 A (t = 10 ms)
I
T(RMS)
≤
12 A
I
T(AV)
≤
7.5 A
I
GT
≤
5 mA (BT151S series L)
I
GT
≤
15 mA (BT151S series R)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
cathode (K)
anode (A)
gate (G)
mounting base; connected to anode
2
1
3
mb
A
G
sym037
Simplified outline
Symbol
K
SOT428 (DPAK)
NXP Semiconductors
BT151S series L and R
Thyristors
3. Ordering information
Table 2.
Ordering information
Package
Name
BT151S-500L
BT151S-500R
BT151S-650L
BT151S-650R
BT151S-800R
DPAK
Description
Version
plastic single-ended surface-mounted package; 3 leads (one lead cropped) SOT428
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DRM
Parameter
repetitive peak off-state voltage
Conditions
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
V
RRM
repetitive peak reverse voltage
BT151S-500L; BT151S-500R
BT151S-650L; BT151S-650R
BT151S-800R
I
T(AV)
I
T(RMS)
I
TSM
average on-state current
RMS on-state current
non-repetitive peak on-state
current
half sine wave; T
mb
≤
103
°C;
see
Figure 1
all conduction angles; see
Figure 4
and
5
half sine wave; T
j
= 25
°C
prior to
surge; see
Figure 2
and
3
t = 10 ms
t = 8.3 ms
I
2
t
dI
T
/dt
I
GM
V
RGM
P
GM
P
G(AV)
T
stg
T
j
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
Max
500
650
800
500
650
800
7.5
12
Unit
V
V
V
V
V
V
A
A
-
-
-
-
-
-
-
120
132
72
50
2
5
5
0.5
+150
125
A
A
A
2
s
A/µs
A
V
W
W
°C
°C
I
2
t for fusing
rate of rise of on-state current
peak gate current
peak reverse gate voltage
peak gate power
average gate power
storage temperature
junction temperature
t = 10 ms
I
TM
= 20 A; I
G
= 50 mA;
dI
G
/dt = 50 mA/µs
over any 20 ms period
-
−40
-
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state.
The rate of rise of current should not exceed 15A/µs.
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
2 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
15
P
tot
(W)
2.2
10
2.8
4
conduction
angle
(degrees)
30
60
90
120
180
0
0
2
4
6
I
T(AV) (A)
form
factor
a
4
2.8
2.2
1.9
1.57
001aab019
98
T
mb(max)
(°C)
107
a=
1.57
1.9
5
116
α
125
8
Form factor a = I
T(RMS)
/I
T(AV)
Fig 1. Total power dissipation as a function of average on-state current; maximum values
160
I
TSM
(A)
120
t
t
p
T
j
initial = 25
°C
max
I
T
001aaa957
I
TSM
80
40
0
1
10
10
2
n
10
3
f = 50 Hz
Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum
values
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
3 of 13
NXP Semiconductors
BT151S series L and R
Thyristors
10
3
001aaa956
I
TSM
(A)
dl
T
/dt limit
10
2
I
T
I
TSM
t
t
p
T
j
initial = 25
°C
max
10
10
−5
10
−4
10
−3
t
p
(s)
10
−2
t
p
≤
10 ms
Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values
001aaa954
25
I
T(RMS)
(A)
20
16
I
T(RMS)
(A)
12
001aaa998
15
8
10
4
5
0
10
−2
10
−1
1
10
surge duration (s)
0
−50
0
50
100
T
mb
(°C)
150
f = 50 Hz; T
mb
≤
103
°C
Fig 4. RMS on-state current as a function of surge
duration; maximum values
Fig 5. RMS on-state current as a function of mounting
base temperature; maximum values
BT151S_SER_L_R_5
© NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 05 — 9 October 2006
4 of 13
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