Operating Temperature Range ......................... -40°C to +105°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) ....................................... +260°C
Absolute Maximum Ratings
V
DDA
to GNDA .......................................................-0.3V to +6V
VDDB to GNDB .......................................................-0.3V to +6V
VLDO to GNDB .....................................................-0.3V to +16V
TD1, TD2 to GNDA ..............................................-0.3V to +12V
TXD, DE,
RE
to GNDA ...........................................-0.3V to +6V
RXD to GNDA......................................... -0.3V to (V
DDA
+ 0.3V)
DEM to GNDB ........................................................-0.3V to +6V
A, B to GNDB ...........................................................-8V to +13V
TD1, TD2 Continuous Current ...........................................±1.4A
Short-Circuit Duration (RXD to GNDA, A, B, DEM,
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
Junction-to-Case Thermal Resistance (θ
JC
) ...................71°C/W
Junction-to-Ambient Thermal Resistance (θ
JA
) ..............23°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
DC Electrical Characteristics
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA= 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
POWER
Supply Voltage
V
DDA
V
DDB
I
DDA
I
DDB
Undervoltage Lockout
Threshold
Undervoltage Lockout
Threshold Hysteresis
TRANSFORMER DRIVER
Output Resistance
TD1, TD2 Current Limit
Switching Frequency
Duty Cycle
Crossover Dead Time
R
O
I
LIM
f
SW
D
tDEAD
TD1/TD2 = low, IOUT = 300mA
4.5V ≤ V
DDA
≤ 5.5V
3.0V ≤ V
DDA
≤ 3.6V
540
485
350
0.6
785
730
450
50
50
1.5
1300
1170
550
Ω
mA
kHz
%
ns
V
UVLOA
V
UVLOB
V
UVHYSTA
V
UVHYSTB
VDDA = 5V, DE = high,
RE
= TXD =
low, RXD unconnected, no load,
TD1/TD2 unconnected
DE = high,
RE
= TXD = low, RXD
unconnected, no load, VDDB = 5V
RE,
RXD, DE, TXD, V
DDA
rising
TD1/TD2 driver, V
DDA
rising
V
DDB
rising
RE,
RXD, DE, TXD
TD1/TD2 driver
1.50
2.55
2.55
3.0
4.5
4.7
7.7
1.58
2.7
2.7
50
200
200
mV
5.5
5.5
7.7
mA
12.5
1.65
2.85
2.85
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Current
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Maxim Integrated
│
2
MAX14940
2.75kV
RMS
Isolated 20Mbps Half-Duplex
PROFIBUS/RS-485 Transceiver with ±35kV ESD
Protection and Integrated Transformer Driver
DC Electrical Characteristics (continued)
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA= 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
LDO
LDO Supply Voltage
LDO Supply Current
LDO Output Voltage
Maximum Output Current
LDO Current Limit
Load Regulation
Line Regulation
Dropout Voltage
LOGIC INTERFACE (TXD, RXD, DE,
RE,
DEM)
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Capacitance
Input Pullup Current
Input Pulldown Current
VIH
VIL
VHYS
CIN
IPU
IPD
Load Capacitance
VLDO = 5.68V, ILOAD = 20mA to
40mA
VLDO = 5.68V to 14V, ILOAD = 20mA
VLDO = 4.68V, IDDB = 120mA
Nominal value (Note 5)
1
0.7 x
VDDA
0.8
220
2
-10
1.5
VDDA
-0.4
VDDB
-0.4
0.40
0.40
-42
-42
+40
+40
-1
+1
µA
-4.5
4.5
-1.5
10
VLDO
ILDO
VDDB
Available for external circuits
Relative to GNDB, LDO is on (Note 4)
DE = high, TXD = low, no load on
RXD, V
LDO
= 5.5V
4.5
10
300
0.19
0.12
100
1.7
1.8
180
10
4.68
7.8
5
14
12.9
5.5
V
mA
V
mA
mA
mV/mA
mV/V
mV
µF
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE to GNDA
RE,
TXD, DE, f = 1MHz
TXD
DE,
RE
RXD to GNDA, IOUT = -4mA
DEM to GNDB, IOUT = -4mA
V
V
mV
pF
µA
µA
Output Voltage High
VOH
V
Output Voltage Low
Short Circuit Output Pullup
Current
VOL
RXD to GNDA, IOUT = 4mA
DEM to GNDB, IOUT = 4mA
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B
>
-50mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = high
0V ≤ V
RXD
≤ V
DDA, V
A
- V
B <
-200mV,
RE
= low
0V ≤ V
DEM
≤ V
DDB, DE = low
V
ISH_PU
mA
Short Circuit Output Pulldown
Current
Three-State Output Current
ISH_PD
mA
IOZ
0V ≤ V
RXD
≤ V
DDA,
RE
= high
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Maxim Integrated
│
3
MAX14940
2.75kV
RMS
Isolated 20Mbps Half-Duplex
PROFIBUS/RS-485 Transceiver with ±35kV ESD
Protection and Integrated Transformer Driver
DC Electrical Characteristics (continued)
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA= 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
DRIVER
RL
= 54Ω, TXD = high or low, Figure 1a
Differential Driver Output
Differential Driver
Peak-to-Peak Output
Change in Magnitude of Differ-
ential Driver Output Voltage
Driver Common-Mode Output
Voltage
Change in Magnitude of
Common-Mode Voltage
Driver Short-Circuit Output
Current
|VOD|
RL
= 100Ω, TXD = high or low, Figure 1a
-7V ≤ V
CM
≤ +12V, Figure 1b
VODPP
ΔV
OD
VOC
ΔV
OC
Figure 2 (Note 5)
RL
= 54Ω, Figure 1b (Note 6)
RL
= 54Ω, Figure 1b
RL
= 54Ω, Figure 1b (Note 6)
GNDB ≤ V
OUT
≤ +12V, output low
(Note 7)
-7V ≤ V
OUT
≤ V
DDB, output high
(Note 7)
(VDDB
- 1V) ≤ V
OUT
≤ +12V,
output low (Note 7, 8)
-7V ≤ V
OUT
≤ +1V, output high
(Note 7, 8)
DE = GNDA,
VDDB = VGNDB
or 5.5V
-7V ≤ V
CM
≤ +12V
VCM = 0V
-7V ≤ V
CM
≤ +12V, DE = low
Measured between A and B,
DE =
RE
= GNDA at 6MHz
Temperature rising
Human Body Model
ESD Protection
(A and B Pins to GNDB)
IEC 61000-4-2 Air-Gap Discharge
IEC 61000-4-2- Contact Discharge
ESD Protection (All Other Pins)
Human Body Model
48
8
VIN = +12V
VIN = -7V
-200
-200
-125
15
-50
-250
+15
mA
-15
-0.2
2.1
2.9
1.5
4.0
-0.2
1.8
5
6.8
+0.2
3
+0.2
+250
mA
V
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
IOSD
Driver Short-Circuit Foldback
Output Current
RECEIVER
Input Current (A and B)
Receiver Differential Threshold
Voltage
Receiver Input Hysteresis
Receiver Input Resistance
Differential Input Capacitance
PROTECTION
Thermal-Shutdown Threshold
Thermal-Shutdown Hysteresis
IOSDF
IA, IB
VTH
ΔV
TH
RIN
CA,B
T
SHDN
T
HYST
+250
µA
mV
mV
kΩ
pF
+160
15
±35
±12
±10
±4
°C
°C
kV
kV
www.maximintegrated.com
Maxim Integrated
│
4
MAX14940
2.75kV
RMS
Isolated 20Mbps Half-Duplex
PROFIBUS/RS-485 Transceiver with ±35kV ESD
Protection and Integrated Transformer Driver
Switching Electrical Characteristics
(VDDA - VGNDA = 3.0V to 5.5V, VDDB - VGNDB = 4.5V to 5.5V, TA = TMIN to TMAX, unless otherwise noted. Typical values are at
VDDA - VGNDA= 3.3V, VDDB - VGNDB = 5V, VGNDA = VGNDB, and TA = +25°C.) (Notes 2, 3)
PARAMETER
DYNAMIC
Common-Mode Transient
Immunity
Glitch Rejection
DRIVER
Driver Propagation Delay
Differential Driver Output Skew
|tDPLH - tDPHL|
Driver Differential Output Rise
or Fall Time
Maximum Data Rate
Driver Enable to Output High
Driver Enable to Output Low
Driver Disable Time From Low
Driver Disable Time From High
RECEIVER
Receiver Propagation Delay
Receiver Output Skew
Maximum Data Rate
Receiver Enable to Output
High
Receiver Enable to Output Low
Receiver Disable Time From Low
Receiver Disable Time From High
tRPLH, tRPHL CL = 15pF, Figures 7 and 8 (Note 10)
CL = 15pF, Figures 7 and 8
tRSKEW
(Note 8, 10)
DRMAX
tRZH
tRZL
tRLZ
tRHZ
RL
= 1kΩ, C
L = 15pF, S2 closed,
Figure 9
RL
= 1kΩ, C
L = 15pF, S1 closed,
Figure 9
RL
= 1kΩ, C
L = 15pF, S1 closed,
Figure 9
RL
= 1kΩ, C
L = 15pF, S2 closed,
Figure 9
20
20
30
20
20
68
6
ns
ns
Mbps
ns
ns
ns
ns
tDPLH, tDPHL
tDSKEW
tLH, tHL
DRMAX
tDZH
tDZL
tDLZ
tDHZ
RL
= 500Ω, C
L = 50pF, Figure 5
RL
= 500Ω, C
L = 50pF, Figure 6
RL
= 500Ω, C
L = 50pF, Figure 6
RL
= 500Ω, C
L = 50pF, Figure 5
RL
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4
RL
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4 (Note 8)
R
L
= 54Ω, C
L = 50pF, Figure 3 and
Figure 4
20
88
88
80
80
68
6
15
ns
ns
ns
Mbps
ns
ns
ns
ns
CMTI
(Note 9)
TXD, DE, RXD
10
35
17
29
kV/μs
ns
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Note 2:
All devices are 100% production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
Note 3:
All currents into the device are positive. All currents out of the device are negative. All voltages are referenced to their
respective ground (GNDA or GNDB), unless otherwise noted.
Note 4:
V
LDO
max indicates voltage capability of the circuit. Power dissipation requirements may limit V
LDO
max to a lower value.
Note 5:
V
ODPP
is the difference in V
OD
when TXD is high and when TXD is low.
Note 6:
ΔV
OD
and ΔV
OC
are the changes in V
OD
and V
OC
, respectively, when the TXD input changes state.
Note 7:
The short circuit output current applies to the peak current just prior to foldback current limiting. The short circuit foldback
output current applies during current limiting to allow a recovery from bus contention. See TOC 6 and TOC 7.
Note 8:
Not production tested. Guaranteed by design.
Note 9:
CMTI is the maximum sustainable common-mode voltage slew rate while maintaining the correct output states. CMTI
applies to both rising and falling common-mode voltage edges. Tested with the transient generator connected between
GNDA and GNDB. ΔV
CM
= 1kV.
Note 10:
Capacitive load includes test probe and fixture capacitance.