MGA-30989
2 - 6GHz, High Linearity Gain Block
Data Sheet
Description
Avago Technologies’ MGA-30989 is a broadband, high
linearity gain block MMIC amplifier achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The device required simple dc biasing components to
achieve wide bandwidth performance. The temperature
compensated internal bias circuit provides stable current
over temperature and process threshold voltage variation.
The MGA-30989 is housed inside a low cost RoHS
compliant SOT89 industry standard SMT package (4.5 x
4.1 x 1.5 mm).
Features
•
High linearity
•
Built in temperature compensated internal bias circuitry
•
No RF matching components required
•
GaAs E-pHEMT Technology
[1]
•
Standard SOT89 package
•
Single, Fixed 5V supply
•
Excellent uniformity in product specifications
•
MSL-1 and Lead-free halogen free
•
High MTTF for base station application
Component Image
Specifications
3.5GHz, 5V, 51mA (typical)
•
12 dB Gain
•
36.8 dBm Output IP3
•
2 dB Noise Figure
•
23.6 dBm Output Power at 1dB gain compression
9GX
#1
#2
RFin
GND
Top View
#3
RFout
#3
#2
RFout
GND
#1
RFin
5GHz, 5V, 51mA (typical)
•
9.6 dB Gain
•
38.4 dBm Output IP3
•
1.65 dB Noise Figure
•
23.8 dBm Output Power at 1dB gain compression
Bottom View
Notes:
Package marking provides orientation and identification
“9G”= Device Code
“X” = Month of Manufacture
Applications
•
IF amplifier, RF driver amplifier
•
General purpose gain block
Note:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 1000 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating
[1]
T
A
=25°C
Symbol
V
dd,max
P
in,max
P
diss
T
j,MAX
T
STG
Thermal Resistance
Units
V
dBm
W
°C
°C
Parameter
Device Voltage, RF output to ground
CW RF Input Power
Total Power Dissipation
[3]
Junction Temperature
Storage Temperature
Absolute Max.
5.5
24
0.47
150
-65 to 150
Thermal Resistance
[2]
θ
JC
= 81.2°C/W
(Vdd = 5 V, Ids = 48 mA, Tc = 85°C)
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infrared
measurement technique.
3. This is limited by maximum Vdd and Ids.
Derate 12.3 mW/°C for Tc >112°C.
Product Consistency Distribution Charts
[1, 2]
LSL
USL
LSL
USL
50
60
8.5
9
9.5
10
10.5
Figure 1. Ids, LSL=42mA , nominal=51mA, USL=66mA
Figure 2. Gain, LSL=8.5dB, nominal=9.6dB, USL=10.5dB
LSL
LSL
35
36
37
38
39
22
22.5
23
23.5
24
24.5
Figure 3. OIP3, LSL=35dBm, nominal=38.4dBm
USL
Figure 4. P1dB, LSL=22dBm, nominal=23.8dBm
Notes:
1. Distribution data sample size is 3000 samples taken from 3 different
wafer lots. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
2. Measurements were made on a characterization test board, which
represents a trade-off between optimal OIP3, gain and P1dB. Circuit
trace losses have not been de-embedded from measurements
above.
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
Figure 5. NF, nominal=1.65dB, USL=2.1dB
2
Electrical Specifications
[1]
T
A
= 25°C, Vdd = 5V
Symbol
Ids
Gain
OIP3
[2]
NF
S11
S22
S12
OP1dB
Parameter and Test Condition
Quiescent current
Gain
Output Third Order Intercept Point
Noise Figure
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Reverse Isolation
Output Power at 1dB Gain Compression
Frequency
N/A
3.5 GHz
5 GHz
3.5 GHz
5 GHz
3.5 GHz
5 GHz
3.5 GHz
5 GHz
3.5 GHz
5 GHz
3.5 GHz
5 GHz
3.5 GHz
5 GHz
Units
mA
dB
dBm
dB
dB
dB
dB
dBm
Min.
42
8.5
35
–
Typ.
51
12
9.6
36.8
38.4
2
1.65
-18
-16
-16
-15
-21
-18
Max.
66
10.5
–
2.1
22
22
23.8
–
Notes:
1. Measurements obtained using demo board described in Figure 22 and 23. Both 3.5GHz and 5GHz data were taken with 3GHz - 6GHz Application
Test Circuits.
2. OIP3 test condition: F
RF1
- F
RF2
= 10MHz with input power of -10dBm per tone measured at worse side band.
3. Use proper bias, heat sink and de-rating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note (if applicable) for more details.
3
Typical Performance (2GHz - 4GHz)
T
A
= 25°C, Vdd = 5V, Input Signal = CW. Application Test Circuit is shown in Figure 22 and Table 1.
80
70
Gain (dB)
Ids (mA)
60
50
40
30
16
15
14
13
12
11
10
9
8
7
6
85°C
25°C
-40°C
-40
-30
-20
-10
Temperature (°C)
Figure 6. Ids over Temperature
Figure 7. Gain over Frequency and Temperature
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
Figure 8. OIP3 over Frequency and Temperature
Figure 9. P1dB over Frequency and Temperature
0
-5
-10
S11 (dB)
-20
-25
-30
-35
-40
85°C
25°C
-40°C
Frequency (GHz)
Figure 10. S11 over Frequency and Temperature
S22 (dB)
-15
0
-5
-10
-15
-20
-25
-30
-35
-40
85°C
25°C
-40°C
Frequency (GHz)
Figure 11. S22 over Frequency and Temperature
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
46
44
42
40
38
36
34
32
30
28
26
85°C
25°C
-40°C
27
26
25
24
23
22
21
20
19
18
17
OIP3 (dBm)
P1dB(dBm)
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
85°C
25°C
-40°C
10
20
30
40
50
60
70
80
90
0
Typical Performance (2GHz - 4GHz)
T
A
= 25°C, Vdd = 5V, Input Signal = CW. Application Test Circuit is shown in Figure 22 and Table 1.
-16
-18
-20
S12 (dB)
NF(dB)
-22
-24
-26
-28
-30
85°C
25°C
-40°C
Frequency (GHz)
Figure 12. S12 over Frequency and Temperature
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
85°C
25°C
-40°C
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Figure 13. Noise Figure over Frequency and Temperature
Typical Performance (3GHz - 6GHz)
T
A
= 25°C, Vdd = 5V, Input Signal = CW. Application Test Circuit is shown in Figure 22 and Table 2.
80
70
Gain (dB)
Ids (mA)
60
50
40
30
16
15
14
13
12
11
10
9
8
7
6
85°C
25°C
-40°C
-40
-30
-20
-10
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
Temperature (°C)
Figure 14. Ids over Temperature
Frequency (GHz)
Figure 15. Gain over Frequency and Temperature
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
Frequency (GHz)
Figure 16. OIP3 over Frequency and Temperature
5
Figure 17. P1dB over Frequency and Temperature
3.0
3.2
3.4
3.6
3.8
4.0
4.2
4.4
4.6
4.8
5.0
5.2
5.4
5.6
5.8
6.0
Frequency (GHz)
46
44
42
40
38
36
34
32
30
28
26
85°C
25°C
-40°C
27
26
25
24
23
22
21
20
19
18
17
OIP3 (dBm)
P1dB(dBm)
5.6
5.8
6.0
85°C
25°C
-40°C
10
20
30
40
50
60
70
80
90
0
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
Frequency (GHz)
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