SMBT3904...PN
NPN / PNP Silicon Switching Transistor Array
•
High current gain
•
Low collector-emitter saturation voltage
•
Two (galvanic) internal isolated NPN / PNP
transistor in one package
•
Pb-free (RoHS compliant) package
•
Qualified according AEC Q101
SMBT3904PN
SMBT3904UPN
C1
6
B2
5
E2
4
TR2
TR1
1
E1
2
B1
3
C2
EHA07177
Type
SMBT3904PN
SMBT3904UPN
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation-
T
S
≤
115 °C, SMBT3904PN
Marking
s3P
s3P
1=E
1=E
Pin Configuration
2=B
2=B
3=C
3=C
4=E
4=E
5=B
5=B
6=C
6=C
Package
SOT363
SC74
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
tot
Value
40
40
6
200
250
330
Unit
V
mA
mW
T
S
≤
105 °C, SMBT3904UPN
Junction temperature
Storage temperature
T
j
T
stg
150
-65 ... 150
°C
1
2012-08-21
SMBT3904...PN
Thermal Resistance
Parameter
Junction - soldering point
1)
SMBT3904PN
SMBT3904UPN
Symbol
R
thJS
Value
≤
140
≤
135
Unit
K/W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Symbol
Values
Parameter
min.
typ. max.
DC Characteristics
-
-
Collector-emitter breakdown voltage
V
(BR)CEO
40
I
C
= 1 mA,
I
B
= 0
Unit
V
Collector-base breakdown voltage
I
C
= 10 µA,
I
E
= 0
V
(BR)CBO
V
(BR)EBO
I
CBO
h
FE
40
6
-
-
-
-
-
-
50
nA
-
Emitter-base breakdown voltage
I
E
= 10 µA,
I
C
= 0
Collector-base cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain
2)
I
C
= 100 µA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
40
70
100
60
30
V
CEsat
-
-
-
-
-
-
-
-
-
-
-
300
-
-
V
0.25
0.4
0.85
0.95
Collector-emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
-
-
V
BEsat
Base emitter saturation voltage
2)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
2
Pulse
0.65
-
1
For calculation of
R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
test: t < 300µs; D < 2%
2
2012-08-21
SMBT3904...PN
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 5 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Delay time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
= 1 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Fall time
V
CC
= 3 V,
I
C
= 10 mA,
I
B1
=
I
B2
= 1 mA
Noise figure
I
C
= 100 µA,
V
CE
= 5 V,
f
= 1 kHz,
∆
f
= 200 Hz,
R
S
= 1 kΩ
F
-
-
5
dB
t
f
-
-
75
t
stg
-
-
225
t
r
-
-
35
t
d
-
-
35
ns
C
eb
-
-
10
C
cb
-
-
3.5
pF
f
T
250
-
-
MHz
Symbol
min.
Values
typ.
max.
Unit
3
2012-08-21
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
