®
BUT11A
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
STMicroelectronics PREFERRED
SALESTYPE
NPN TRANSISTOR
HIGH VOLTAGE CAPABILITY
FAST SWITCHING SPEED
APPLICATIONS:
s
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
DESCRIPTION
The BUT11A is a silicon Multiepitaxial Mesa NPN
transistor in Jedec TO-220 plastic package,
particularly intended for switching application.
bs
O
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= 0 V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Power Dissipation at T
c
≤
25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
1000
450
9
5
10
2
4
83
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
C
o
C
et
ol
od
r
P
e
c
u
-O
s)
t(
so
b
te
le
ro
P
TO-220
uc
d
3
1
2
s)
t(
INTERNAL SCHEMATIC DIAGRAM
March 2004
1/5
BUT11A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case
Max
1.5
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
I
CES
I
EBO
Parameter
Collector Cut-off
Current (V
BE
= 0)
Emitter Cut-off Current
(I
C
= 0)
Test Conditions
V
CE
= rated V
CES
at T
c
= 125
o
C
I
C
= 0
I
B (off)
= 0
V
BE
= 9 V
I
C
= 100 mA
450
Min.
Typ.
Max.
1
2
10
Unit
mA
mA
mA
V
V
CEO(sus)*
Collector-emitter
Sustaining Voltage
(I
B
= 0)
V
CE(sat)*
V
BE(sat)*
h
FE
Collector-emitter
Saturation Voltage
Base-emitter
Saturation Voltage
DC Current Gain
RESISTIVE LOAD
Turn on Time
Storage Time
Fall Time
I
C
= 2.5 A
I
C
= 2.5 A
I
C
= 5 mA
I
C
= 0.5 A
I
B
= 0.5 A
I
B
= 0.5 A
V
CE
= 5 V
V
CE
= 5 V
10
10
1.5
t
on
t
s
t
f
I
C
= 2.5 A
V
CC
= 250 V
I
B
= -I
B2
= 0.5 A
∗
Pulsed: Pulse duration = 300
µs,
duty cycle 1.5 %.
bs
O
et
ol
od
r
P
e
c
u
-O
s)
t(
so
b
te
le
ro
P
u
d
ct
1.3
35
35
1
4
0.8
s)
(
V
V
µs
µs
µs
2/5
BUT11A
DC Current Gain
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
bs
O
et
ol
od
r
P
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c
u
-O
s)
t(
so
b
te
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P
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d
s)
t(
3/5
BUT11A
TO-220 MECHANICAL DATA
DIM.
A
C
D
E
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
M
DIA.
3.75
13.00
2.65
15.25
6.20
3.50
2.60
3.85
mm
MIN.
4.40
1.23
2.40
0.49
0.61
1.14
1.14
4.95
2.40
10.00
16.40
14.00
2.95
15.75
6.60
3.93
0.511
0.104
0.600
TYP.
MAX.
4.60
1.32
2.72
0.70
0.88
1.70
1.70
5.15
2.70
10.40
MIN.
0.173
0.048
0.094
0.019
0.024
0.044
0.044
0.194
0.094
0.394
0.645
inch
TYP.
MAX.
0.181
0.052
0.107
0.027
0.034
0.067
0.067
bs
O
et
ol
od
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P
e
c
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-O
s)
t(
bs
te
le
o
0.244
0.137
0.147
ro
P
uc
d
s)
t(
0.202
0.106
0.409
0.551
0.116
0.620
0.260
0.154
0.102
0.151
P011CI
4/5
BUT11A
bs
O
et
ol
od
r
P
e
c
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-O
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t(
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b
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t(
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics.
All other names are the property of their respective owners.
© 2004 STMicroelectronics – All Rights reserved
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