STD815CP40
Complementary transistor pair in a single package
Datasheet — production data
Features
■
■
■
■
Low V
CE(sat)
Simplified circuit design
Reduced component count
Low spread of dynamic parameters
8
4
1
Application
■
Compact fluorescent lamp (CFL) 220 V mains
DIP-8
Description
The STD815CP40 is a hybrid complementary pair
of power bipolar transistors manufactured by
using the high voltage multi-epitaxial planar
technology for high switching speeds and medium
voltage capability.
The STD815CP40 is housed in dual island DIP-8
package with separated terminals for higher
assembly flexibility, specifically recommended to
be used in a new solution for compact fluorescent
lamp (CFL).
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
D815CP40
Package
DIP-8
Packing
Tube
Order code
STD815CP40
October 2012
This is information on a product in full production.
Doc ID 14829 Rev 4
1/11
www.st.com
11
Electrical ratings
STD815CP40
1
Electrical ratings
Table 2.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
P
TOT
T
STG
T
J
Absolute maximum ratings
Value
Parameter
NPN
Collector-base voltage (I
E
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0, I
B
= 0.75 A, t
p
< 10 ms)
Collector current
Collector peak current (t
P
< 5 ms)
Base current
Base peak current (t
P
< 1 ms)
Total dissipation at T
amb
= 25 °C single transistor
Total dissipation at T
case
= 25 °C single transistor
Storage temperature
Max. operating junction temperature
700
400
V
(BR)EBO
1.5
3
0.75
1.5
2.6
45
- 65 to 150
150
PNP
500
V
V
V
A
A
A
A
W
W
°C
°C
Unit
Table 3.
Symbol
R
thJA (1)
R
thJC (1)
Thermal data
Parameter
Thermal resistance junction-ambient (single transistor)
Thermal resistance junction-case (single transistor)
Value
48
2.7
Unit
°C/W
°C/W
1. When mounted on 25mm square pad of 2 oz. copper, t
≤
10 sec.
Note:
For PNP types voltage and current values are negative.
2/11
Doc ID 14829 Rev 4
STD815CP40
Electrical characteristics
2
Electrical characteristics
T
case
= 25°C unless otherwise specified.
Table 4.
Symbol
Electrical characteristics
Parameter
Test conditions
For NPN:
V
CE
= 700 V
V
CE
= 700 V
For PNP:
V
CE
= 500 V
V
CE
= 500 V
I
E
= 10 mA
For NPN:
For PNP:
I
C
= 5 mA
I
C
= 0.5 A
I
C
= 0.35 A
I
C
= 0.5 A_
I
C
= 10 mA
I
C
= 0.35A
I
C
= 1 A
I
C
= 0.35 A
I
B1
= 70 mA_
t
p
≥
25 µs
I
C
= 0.5 A
_ _
V
BE(off)
= -5 V
V
clamp
= 300 V
I
B
= 0.1 A
I
B
= 50 mA
_
I
B
= 0.1 A
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 5 V
V
CC
= 125 V
I
B2
= -70 mA
I
B1
= 0.1 A
L = 10 mH
450
80
ns
ns
10
16
4
100
2.2
0.2
Min.
Typ.
Max.
Unit
I
CES
Collector cut-off current
(V
BE
= 0)
T
C
= 125°C
1
5
1
5
12
5
400
0.5
1
1
18
10
mA
mA
mA
mA
V
V
V
V
V
V
T
C
= 125°C
V
(BR)EBO
Emitter-base breakdown
voltage (I
C
= 0)
Collector-emitter
sustaining voltage
(I
B
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Resistive load
Rise time
Storage time
Fall time
Inductive load
Storage time
Fall time
V
CEO(sus)
(1)
V
CE(sat)(1)
V
BE(sat)(1)
h
FE(1)
34
t
r
t
s
t
f
t
s
t
f
ns
µs
µs
1. Pulse test: pulse duration
≤
300 µs, duty cycle
≤
2 %.
Note:
For PNP types voltage and current values are negative
Doc ID 14829 Rev 4
3/11
Electrical characteristics
STD815CP40
2.1
Figure 2.
Electrical characteristics (curves)
DC current gain NPN (V
CE
= 5 V)
Figure 3.
DC current gain PNP (V
CE
= - 5 V)
Figure 4.
DC current gain NPN (V
CE
= 1 V)
Figure 5.
DC current gain PNP (V
CE
= - 1 V)
Figure 6.
Derating curve
4/11
Doc ID 14829 Rev 4
STD815CP40
Figure 7.
Collector emitter saturation voltage Figure 8.
NPN
Electrical characteristics
Collector emitter saturation voltage
PNP
Figure 9.
Base emitter saturation voltage
NPN
Figure 10. Base emitter saturation voltage
PNP
Figure 11. Resistive load fall time NPN
Figure 12. Resistive load fall time PNP
Doc ID 14829 Rev 4
5/11
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