VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Stud Version), 330 A
FEATURES
• Center amplifying gate
• International standard case TO-118 (TO-209AE)
• Hermetic metal case with ceramic insulator
TO-118 (TO- 209AE)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Designed and qualified for industrial level
330 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
400 V, 800 V, 1200 V, 1400 V,
1600 V, 2000 V
1.52 V
200 mA
-40 °C to +125 °C
TO-118 (TO-209AE)
Single SCR
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
TEST CONDITIONS
VALUES
330
T
C
75
520
9000
9420
405
370
400 to 2000
100
-40 to +125
kA
2
s
V
µs
°C
A
UNITS
A
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
08
VS-ST330S
12
14
16
20
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
800
1200
1400
1600
2000
V
RSM
, MAXIMUM
I
DRM
/I
RRM
MAXIMUM AT
NON-REPETITIVE PEAK VOLTAGE
T
J
= T
J
MAXIMUM
V
mA
500
900
1300
1500
1700
2100
50
Revision: 27-Sep-17
Document Number: 94409
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
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VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
VALUES
330
75
DC at 75 °C case temperature
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
520
9000
9420
7570
Sinusoidal half wave,
initial T
J
= T
J
maximum
7920
405
370
287
262
4050
0.834
0.898
0.687
0.636
1.52
600
1000
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 1000 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 550 A, T
J
= T
J
maximum, dI/dt = 40 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
µs
100
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
50
UNITS
V/µs
mA
Revision: 27-Sep-17
Document Number: 94409
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+V
GM
-V
GM
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= -40 °C
DC gate current required to trigger
I
GT
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate current/voltage
not to trigger is the maximum
value which will not trigger any
unit with rated V
DRM
anode to
cathode applied
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied
200
100
50
2.5
1.8
1.1
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
200
-
-
3
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Mounting torque, ± 10 %
Approximate weight
Case style
See dimension - link at the end of datasheet
SYMBOL
T
J
T
Stg
R
thJC
R
thC-hs
DC operation
Mounting surface, smooth, flat and greased
Non-lubricated threads
TEST CONDITIONS
VALUES
-40 to +125
-40 to +150
0.10
0.03
48.5
(425)
535
UNITS
°C
K/W
N·m
(lbf · in)
g
TO-118 (TO-209AE)
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.011
0.013
0.017
0.025
0.041
RECTANGULAR CONDUCTION
0.008
0.014
0.018
0.026
0.042
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 27-Sep-17
Document Number: 94409
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case T
emperature (°C)
130
120
110
100
90
80
70
60
0
100
200
300
400
500
600
Average On-state Current (A)
30°
60°
90°
120°
Conduc tion Period
Maximum Allowable Case T
emperature (°C)
130
120
110
Conduc tion Angle
S 330S S
T
eries
R
thJC
(DC) = 0.10 K/ W
S 330S S
T
eries
R
thJC
(DC) = 0.10 K/ W
100
30°
90
80
70
0
50
100
150
200
250
300
350
Average On-state Current (A)
60°
90°
120°
180°
180°
DC
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss(W)
480
440
400
360
320
280
240
200
160
120
80
Conduction Angle
180°
120°
90°
60°
30°
RMSLimit
0.
08
A
hS
R
t
0.
12
K/
W
=
03
0.
K/
W
W
K/
ta
el
-D
0.2
K/
W
K/ W
0.4
K/ W
0.6 K
/
W
R
0.3
40
0
0
50
100
150
S 330SS
T
eries
T = 125°C
J
1.2 K/
W
200
250
300
25
350
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emperature (°C)
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
650
600
550
500
450
400
350
DC
180°
120°
90°
60°
30°
R
SA
th
=
03
0.
K/
W
0.1
2K
/W
0.2
K/ W
0.3
K/ W
0.4
K/ W
0. 6 K
/W
0.
08
W
K/
ta
el
-D
R
300 RMSLimit
250
200
150
100
Conduction Period
50
0
0
100
200
300
S 330SS
T
eries
T = 125°C
J
400
500
1.2 K/ W
25
600
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient T
emp erature (°C)
Fig. 4 - On-State Power Loss Characteristics
Revision: 27-Sep-17
Document Number: 94409
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST330SPbF Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
9000
Maximum Non R
epetitive S
urge Current
Vers Pulse T
us
rain Duration. Control
8000 Of Conduction May Not Be Maintained.
Initial T = 125°C
J
No Voltage R
eapp lied
7000
Rated V
RRM
R
eapplied
6000
5000
4000
3000
0.01
8000
Peak Half S Wave On-state Current (A)
ine
7500
7000
6500
6000
5500
5000
4500
4000
3500
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
S 330S S
T
eries
10
100
S 330SS
T
eries
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
10000
Instantaneous On-state Current (A)
1000
Tj = 25 °C
Tj = 125 °C
ST330S Series
100
0
1
2
3
4
5
6
7
Instantaneous On-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
T
ransient T
hermal Impedance Z
thJC
(K/ W)
1
S
teady S
tate Value
R
thJC
= 0.10 K/ W
(DC Operation)
0.1
0.01
S 330SS
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 27-Sep-17
Document Number: 94409
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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