STTH1512
1200 V ultrafast recovery diode
Features
A
K
■
■
■
■
■
■
Ultrafast, soft recovery
Very low conduction and switching losses
High frequency and/or high pulsed current
operation
High reverse voltage capability
High junction temperature
Insulated package: DOP3I
– Electrical insulation = 2500 V rms
– Capacitance = 12 pF
K
A
K
A
K
DOP3I
STTH1512PI
DO247
STTH1512W
K
A
Description
The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.
Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.
The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.
A
A
A
K
TO-220AC
STTH1512D
D
2
PAK
STTH1512G
Table 1. Device summary
Symbol
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(typ)
Value
15 A
1200 V
175 °C
1.20 V
53 ns
April 2010
Doc ID 12157 Rev 2
1/11
www.st.com
11
Characteristics
STTH1512
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
I
F(AV)
Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Parameter
Repetitive peak reverse voltage
Forward rms current
Average forward current,
δ
= 0.5
Repetitive peak forward
current
Surge non repetitive
forward current
Storage temperature range
Maximum operating junction temperature
TO-220AC / DO247 / DOP3I / D
2
PAK
TO-220AC / D
2
PAK /
DO247
DOP3I
T
c
= 130 °C
T
c
= 105 °C
200
200
-65 to + 175
175
A
A
°C
°C
Value
1200
50
Unit
V
A
15
A
I
FRM
I
FSM
T
stg
T
j
t
p
= 5 µs, F = 5 kHz square
t
p
= 10 ms Sinusoidal
Table 3.
Symbol
R
th(j-c)
Thermal parameters
Parameter
TO-220AC / D
2
PAK / DO247
Junction to case
DOP3I
2
°C/W
Value
1.3
Unit
°C/W
Table 4.
Symbol
I
R(1)
Static electrical characteristics
Parameter
Reverse leakage
current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
R
= V
RRM
Min.
Typ.
Max.
15
µA
10
100
2.10
I
F
= 15 A
1.25
1.20
1.90
1.80
V
Unit
V
F(2)
Forward voltage drop
T
j
= 125 °C
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the conduction losses use the following equation:
P = 1.4 x I
F(AV)
+ 0.027 I
F
2
(RMS)
2/11
Doc ID 12157 Rev 2
STTH1512
Table 5.
Symbol
Characteristics
Dynamic characteristics
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
53
20
1.5
600
5.5
ns
V
Min.
Typ.
Max.
105
ns
75
28
A
Unit
t
rr
Reverse recovery time
I
RM
S
t
fr
V
FP
Reverse recovery current
Softness factor
Forward recovery time
Forward recovery voltage
I
F
= 15 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
I
F
= 15 A, dI
F
/dt = -200 A/µs,
V
R
= 600 V, T
j
= 125 °C
dI
F
/dt = 50 A/µs
I
F
= 15 A
V
FR
= 1.5 x V
Fmax
, T
j
= 25 °C
I
F
= 15 A, dI
F
/dt = 50 A/µs,
T
j
= 25 °C
Figure 1.
P(W)
35
30
25
20
15
10
5
Conduction losses versus
average current
δ
= 0.1
δ
= 0.05
δ
=1
δ
= 0.2
δ
= 0.5
Figure 2.
I
FM
(A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
Forward voltage drop versus
forward current
T
j
=150°C
(typical values)
T
j
=150°C
(maximum values)
T
j
=25°C
(maximum values)
T
I
F(AV)
(A)
0
0
2
4
6
8
10
12
δ
=tp/T
14
16
tp
18
10
0
0.0
0.5
1.0
1.5
2.0
V
FM
(V)
2.5
3.0
3.5
4.0
Figure 3.
Relative variation of thermal
impedance junction to case
versus pulse duration
Figure 4.
Peak reverse recovery current
versus dI
F
/dt (typical values)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
I
RM
(A)
50
45
40
35
30
25
20
15
10
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
I
F
=2 x I
F(AV)
V
R
=600V
T
j
=125°C
t
p
(s)
5
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Doc ID 12157 Rev 2
3/11
Characteristics
STTH1512
Figure 5.
t
rr
(ns)
600
550
500
450
400
350
300
250
200
150
100
0
50
Reverse recovery time versus
dI
F
/dt (typical values)
V
R
=600V
T
j
=125°C
Figure 6.
Q
rr
(µC)
5.5
5.0
4.5
V
R
=600V
T
j
=125°C
Reverse recovery charges versus
dI
F
/dt (typical values)
I
F
=2 x I
F(AV)
I
F
=2 x I
F(AV)
4.0
3.5
I
F
=0.5 x I
F(AV)
I
F
=I
F(AV)
3.0
2.5
2.0
1.5
1.0
0.5
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
100
150
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
0.0
Figure 7.
Softness factor versus
dI
F
/dt (typical values)
Figure 8.
Relative variations of dynamic
parameters versus junction
temperature
I
F
=I
F(AV)
V
R
=600V
Reference: T
j
=125°C
S factor
S factor
3.0
I
F
≤
2xI
F(AV)
V
R
=600V
T
j
=125°C
2.25
2.00
1.75
1.50
2.5
2.0
1.25
1.00
1.5
t
rr
0.75
0.50
I
RM
1.0
0.25
Q
RR
0.5
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
T
j
(°C)
0.00
25
50
75
100
125
Figure 9.
V
FP
(V)
40
35
30
25
20
15
10
5
I
F
=I
F(AV)
T
j
=125°C
Transient peak forward voltage
versus dI
F
/dt (typical values)
Figure 10. Forward recovery time versus dI
F
/dt
(typical values)
t
fr
(ns)
800
700
600
500
400
300
200
100
I
F
=I
F(AV)
V
FR
=1.5 x V
F
max.
T
j
=125°C
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
0
0
100
dI
F
/dt(A/µs)
200
300
400
500
4/11
Doc ID 12157 Rev 2
STTH1512
Characteristics
Figure 11. Junction capacitance versus
reverse voltage applied
(typical values)
C(pF)
1000
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 12. Thermal resistance junction to
ambient versus copper surface
under each lead
80
70
60
50
Rth(j-a)(°C/W)
Epoxy printed circuit board FR4,
copper thickness = 35 µm
100
40
30
20
V
R
(V)
10
1
10
100
1000
10
S
CU
(cm²)
0
0
5
10
15
20
25
30
35
40
Doc ID 12157 Rev 2
5/11
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