STTH16L06C
Turbo 2 ultrafast high voltage rectifier
Features
A1
■
■
■
■
Ultrafast switching
Low reverse recovery current
Reduces switching and conduction losses
Low thermal resistance
A2
A2
K
Description
A1
K
A2
K
A1
The STTH16L06, which is using ST Turbo 2 600 V
technology, is specially suited for use in switching
power supplies, and industrial applications, as
rectification and discontinuous mode PFC boost
diode.
TO-220AB
STTH16L06CT
TO-220FPAB
STTH16L06CFP
K
A2
A1
D
2
PAK
STTH16L06CG
Table 1.
Device summary
I
F(AV)
V
RRM
T
j
V
F
(typ)
t
rr
(max)
Up to 2 x 10 A
600 V
175 °C
1.05 V
35 ns
April 2011
Doc ID 10760 Rev 2
1/10
www.st.com
10
Characteristics
STTH16L06C
1
Characteristics
Table 2.
Symbol
V
RRM
I
F(RMS)
Absolute ratings (limiting values)
Parameter
Repetitive peak reverse voltage
Forward rms current
TO-220AB /
2
Average forward current D PAK
δ
= 0.5
TO-220FPAB
T
c
= 140 °C
T
c
= 135 °C
T
c
= 130 °C
T
c
= 120 °C
Per diode
Per device
Per diode
Per device
Value
600
30
8
16
10
20
8
16
120
-65 to + 175
175
A
°C
°C
Unit
V
A
I
F(AV)
A
T
c
= 110 °C Per diode
T
c
= 80 °C Per device
t
p
= 10 ms sinusoidal
I
FSM
T
stg
T
j
Surge non repetitive forward current
Storage temperature range
Maximum operating junction temperature
Table 3.
Symbol
Thermal resistance
Parameter
TO-220AB / D
2
PAK
Per diode
Per diode
Total
Total
Maximum
2.5
5
1.6
3.8
0.7
2.5
°C/
W
°C/
W
Unit
R
th(j-c)
Junction to case
TO-220FPAB
TO-220AB / D
2
PAK
TO-220FPAB
TO-220AB / D
2
PAK
TO-220FPAB
R
th(c)
Coupling
When the diodes 1 and 2 are used simultaneously:
Δ
T
j (diode1)
= P
(diode1)
x R
th(j-c) (per diode)
+ P
(diode2)
x R
th(c)
Table 4.
Symbo
l
I
R(1)
Static electrical characteristics
Parameter
Test conditions
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
T
j
= 25 °C
T
j
= 150 °C
Min.
Typ
Max.
8
25
240
1.8
1.05
1.35
2.08
1.28
1.64
V
Unit
Reverse leakage current
V
R
= V
RRM
I
F
= 8 A
I
F
= 16 A
µA
V
F(2)
Forward voltage drop
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
To evaluate the maximum conduction losses use the following equation:
P = 1.06 x I
F(AV)
+ 0.036 I
F2(RMS)
2/10
Doc ID 10760 Rev 2
STTH16L06C
Table 5.
Symbol
Characteristics
Dynamic electrical characteristics
Parameter
Test conditions
I
F
= 0.5 A, I
rr
= 0.25 A, I
R
= 1 A
Min.
Typ
Max.
35
ns
40
4.5
55
6.5
200
3.5
A
ns
V
Unit
t
rr
Reverse recovery time
T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = 50 A/µs,
V
R
= 30 V
I
F
= 8 A, dI
F
/dt = 100 A/µs,
V
R
= 400 V
dI
F
/dt = 100 A/µs
I
F
= 8 A
V
FR
= 1.1 x V
Fmax
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
T
j
= 125 °C
T
j
= 25 °C
Figure 1.
P(W)
15
Conduction losses versus average Figure 2.
current
I
FM
(A)
100
Forward voltage drop versus
forward current
δ
= 0.05
δ
= 0.1
δ
= 0.2
δ
= 0.5
90
80
T
j
=150°C
(maximum values)
10
70
δ
=1
60
50
40
T
j
=150°C
(typical values)
T
j
=25°C
(maximum values)
5
T
30
20
I
F(AV)
(A)
0
0
2
4
6
δ
=tp/T
8
tp
10
10
0
0.0
0.5
1.0
1.5
V
FM
(V)
2.0
2.5
3.0
3.5
Figure 3.
Relative variation of thermal
Figure 4.
impedance junction to case versus
pulse duration (TO-220AB, D
2
PAK)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Single pulse
Relative variation of thermal
impedance junction to case versus
pulse duration (TO-220FPAB)
Z
th(j-c)
/R
th(j-c)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-03
1.E-02
1.E-01
1.E+00
Single pulse
Z
th(j-c)
/R
th(j-c)
t
p
(s)
0.1
0.0
1.E-03
1.E-02
t
p
(s)
1.E-01
1.E+00
1.E+01
Doc ID 10760 Rev 2
3/10
Characteristics
STTH16L06C
Figure 5.
Peak reverse recovery current
versus dI
F
/dt (typical values, per
diode)
Figure 6.
Reverse recovery time versus dI
F
/dt
(typical values, per diode)
I
RM
(A)
18
16
14
12
10
200
8
6
4
2
150
100
50
I
F
=0.5 x I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
t
rr
(ns)
400
350
300
I
F
=2 x I
F(AV)
V
R
=400V
T
j
=125°C
I
F
=I
F(AV)
250
I
F
=I
F(AV)
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
0
0
50
100
150
200
250
300
350
400
450
500
0
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 7.
Reverse recovery charges versus
dI
F
/dt (typical values, per diode)
Figure 8.
Reverse recovery softness factor
versus dI
F
/dt (typical values, per
diode)
I
F
< 2 x I
F(AV)
V
R
=400V
T
j
=125°C
Q
rr
(nC)
800
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0
1.6
V
R
=400V
T
j
=125°C
I
F
=2 x I
F(AV)
S factor
1.4
1.2
I
F
=I
F(AV)
1.0
0.8
0.6
0.4
0.2
I
F
=0.5 x I
F(AV)
dI
F
/dt(A/µs)
0.0
100
200
300
400
500
0
50
100
150
dI
F
/dt(A/µs)
200
250
300
350
400
450
500
Figure 9.
Relative variations of dynamic
parameters versus junction
temperature
S factor
Figure 10. Transient peak forward voltage
versus dI
F
/dt (typical values, per
diode)
V
FP
(V)
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
I
F
=I
F(AV)
T
j
=125°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
t
rr
I
F
=I
F(AV)
V
R
=400V
Reference: T
j
=125°C
I
RM
Q
RR
T
j
(°C)
0.0
25
50
75
100
125
dI
F
/dt(A/µs)
0
50
100
150
200
250
300
350
400
450
500
4/10
Doc ID 10760 Rev 2
STTH16L06C
Characteristics
Figure 11. Forward recovery time versus dI
F
/dt Figure 12. Junction capacitance versus
(typical values, per diode)
reverse voltage applied (typical
values, per diode)
t
fr
(ns)
180
160
140
120
100
10
80
60
40
20
I
F
=I
F(AV)
V
FR
=1.1 x V
F
max.
T
j
=125°C
C(pF)
100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
dI
F
/dt(A/µs)
0
0
100
200
300
400
500
1
1
10
V
R
(V)
100
1000
Figure 13. Thermal resistance junction to ambient versus copper surface under tab (epoxy
FR4, copper thickness = 35 µm) (D
2
PAK)
R
th(j-a)
(°C/W)
80
70
60
50
40
30
20
10
S
CU
(cm²)
0
0
5
10
15
20
25
30
35
40
Doc ID 10760 Rev 2
5/10
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