ISL9K30120G3
May 2002
ISL9K30120G3
30A, 1200V Stealth™
Dual
Diode
General Description
The ISL9K30120G3 is a Stealth™ dual diode optimized for low
loss performance in high frequency hard switched applications.
The Stealth™ family exhibits low reverse recovery current
(I
RM(REC)
) and exceptionally soft recovery under typical
operating conditions.
This device is intended for use as a free wheeling or boost
diode in power supplies and other power switching
applications. The low I
RM(REC)
and short t
a
phase reduce loss
in switching transistors. The soft recovery minimizes ringing,
expanding the range of conditions under which the diode may
be operated without the use of additional snubber circuitry.
Consider using the Stealth™ diode with a 1200V NPT IGBT to
provide the most efficient and highest power density design at
lower cost.
Formerly developmental type TA49415
.
Features
• Soft Recovery . . . . . . . . . . . . . . . . . . . . . . . . t
b
/ t
a
> 4.5
• Fast Recovery . . . . . . . . . . . . . . . . . . . . . . . . . t
rr
< 56ns
• Operating Temperature . . . . . . . . . . . . . . . . . . . . 150
o
C
• Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V
• Avalanche Energy Rated
Applications
• Switch Mode Power Supplies
• Hard Switched PFC Boost Diode
• UPS Free Wheeling Diode
• Motor Drive FWD
• SMPS FWD
•
Snubber Diode
Package
JEDEC STYLE TO-247
ANODE 2
CATHODE
CATHODE
(BOTTOM SIDE
METAL)
ANODE 1
Symbol
K
A1
A2
Device Maximum Ratings (
per leg)
T
C
= 25°C unless otherwise noted
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FRM
I
FSM
P
D
E
AVL
T
J
, T
STG
T
L
T
PKG
Parameter
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current (T
C
=
Total Device Current (Both Legs)
80
o
C)
Ratings
1200
1200
1200
30
60
70
325
166
20
-55 to 150
300
260
Units
V
V
V
A
A
A
A
W
mJ
°C
°C
°C
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60Hz)
Power Dissipation
Avalanche Energy (1A, 40mH)
Operating and Storage Temperature Range
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Application Note AN-7528
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and
operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
ISL9K30120G3
Package Marking and Ordering Information
Device Marking
K30120G3
Device
ISL9K30120G3
Package
TO-247
Tape Width
N/A
Quantity
30
Electrical Characteristics (
per leg)
TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off State Characteristics
I
R
Instantaneous Reverse Current
V
R
= 1200V
T
C
= 25°C
T
C
= 125°C
-
-
-
-
100
1.0
µA
mA
On State Characteristics
V
F
Instantaneous Forward Voltage
I
F
= 30A
T
C
= 25°C
T
C
= 125°C
-
-
2.8
2.6
3.3
3.1
V
V
Dynamic Characteristics
C
J
Junction Capacitance
V
R
= 10V, I
F
= 0A
-
115
-
pF
Switching Characteristics
t
rr
t
rr
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
t
rr
S
I
RM(REC)
Q
RR
dI
M
/dt
Reverse Recovery Time
Reverse Recovery Time
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Reverse Recovery Time
Softness Factor (t
b
/t
a
)
Maximum Reverse Recovery Current
Reverse Recovered Charge
Maximum di/dt during t
b
I
F
= 1A, dI
F
/dt = 100A/µs, V
R
= 15V
I
F
= 30A, dI
F
/dt = 100A/µs, V
R
= 15V
I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 780V, T
C
= 25°C
I
F
= 30A,
dI
F
/dt = 200A/µs,
V
R
= 780V,
T
C
= 125°C
I
F
= 30A,
dI
F
/dt = 1000A/µs,
V
R
= 780V,
T
C
= 125°C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
45
80
269
7.5
930
529
6.2
11
3.0
260
4.8
30
3.4
520
56
100
-
-
-
-
-
-
-
-
-
-
-
-
ns
ns
ns
A
nC
ns
-
A
µC
ns
-
A
µC
A/µs
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance Junction to Case
TO-247
-
-
-
-
0.75
30
°C/W
°C/W
Thermal Resistance Junction to Ambient TO-247
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
ISL9K30120G3
Typical Performance Curves (per leg)
60
1000
150
o
C
150
o
C
125
o
C
I
R
, REVERSE CURRENT (µA)
50
I
F
, FORWARD CURRENT (A)
100
125
o
C
100
o
C
10
75
o
C
40
30
100
o
C
25
o
C
1
20
10
0.1
25
o
C
0
0.5
1
1.5
2
2.5
3
3.5
4
0.01
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
V
F
, FORWARD VOLTAGE (V)
V
R
, REVERSE VOLTAGE (KV)
Figure 1. Forward Current vs Forward Voltage
750
V
R
= 780V, T
C
= 125
o
C
Figure 2. Reverse Current vs Reverse Voltage
750
V
R
= 780V, T
C
= 125
o
C
625
t, RECOVERY TIMES (ns)
t, RECOVERY TIMES (ns)
t
b
at dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
500
625
t
b
at I
F
= 60A, 30A, 15A
500
375
375
250
250
125
t
a
at dI
F
/dt = 200A/µs, 500A/µs, 800A/µs
125
t
a
at I
F
= 60A, 30A, 15A
0
0
10
20
30
40
50
60
I
F
, FORWARD CURRENT (A)
0
200
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 3. t
a
and t
b
Curves vs Forward Current
40
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
V
R
= 780V, T
C
= 125
o
C
40
Figure 4. t
a
and t
b
Curves vs dI
F
/dt
V
R
= 780V, T
C
= 125
o
C
35
30
dI
F
/dt = 800A/µs
dI
F
/dt = 500A/µs
30
20
25
I
F
= 60A
20
I
F
= 30A
15
I
F
= 15A
dI
F
/dt = 200A/µs
10
0
0
10
20
30
40
50
60
I
F
, FORWARD CURRENT (A)
10
200
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Maximum Reverse Recovery Current vs
Forward Current
Figure 6. Maximum Reverse Recovery Current vs
dI
F
/dt
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
ISL9K30120G3
Typical Performance Curves (per leg)
(Continued)
S, REVERSE RECOVERY SOFTNESS FACTOR
9
V
R
= 780V, T
C
= 125
o
C
8
I
F
= 60A
7
Q
RR
, REVERSE RECOVERED CHARGE (µC)
6.0
V
R
= 780V, T
C
= 125
o
C
5.6
I
F
= 60A
5.0
4.5
4.0
I
F
= 30A
3.5
3.0
2.5
2.0
200
I
F
= 15A
6
I
F
= 30A
5
I
F
= 15A
4
3
200
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
400
600
800
1000
1200
dI
F
/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 7. Reverse Recovery Softness Factor vs
dI
F
/dt
1600
C
J
, JUNCTION CAPACITANCE (pF)
1400
1200
1000
800
600
400
200
0
0.03
f = 1MH
Z
Figure 8. Reverse Recovery Charge vs dI
F
/dt
I
RM(REC)
, MAX REVERSE RECOVERY CURRENT (A)
-14
I
F
= 30A, V
R
= 780V, dI
F
/dt = 500A/µs
I
RM(REC)
-16
400
350
-18
300
-20
t
RR
-22
25
250
0.1
1
10
100
50
75
100
125
200
150
V
R
, REVERSE VOLTAGE (V)
T
C
, CASE TEMPERATURE (
o
C)
Figure 9. Junction Capacitance vs Reverse Voltage
Figure 10. Maximum Reverse Recovery Current
and t
rr
vs Case Temperature
I
F(AV)
, AVERAGE FORWARD CURRENT (A)
35
30
25
20
15
10
5
0
60
70
80
90
100
110
120
130
140
150
T
C
, CASE TEMPERATURE (
o
C)
Figure 11.
DC CURRENT DERATING CURVE
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
t, RECOVERY TIMES (ns)
ISL9K30120G3
Typical Performance Curves (per leg)
(Continued)
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.01
1.0
THERMAL IMPEDANCE
Z
θJA
, NORMALIZED
P
DM
0.1
t
1
t
2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
10
-3
10
-2
10
-1
t, RECTANGULAR PULSE DURATION (s)
10
0
10
1
0.01
10
-5
10
-4
Figure 12. Normalized Maximum Transient Thermal Impedance
Test Circuit and Waveforms
V
GE
AMPLITUDE AND
R
G
CONTROL dI
F
/dt
t
1 AND
t
2
CONTROL I
F
L
I
F
DUT
R
G
CURRENT
SENSE
+
MOSFET
V
DD
0
0.25 I
RM
I
RM
dI
F
dt
t
a
t
rr
t
b
V
GE
t
1
t
2
-
Figure 13. t
rr
Test Circuit
Figure 14. t
rr
Waveforms and Definitions
I = 1A
L = 40mH
R < 0.1Ω
V
DD
= 50V
E
AVL
= 1/2LI
2
[V
R(AVL)
/(V
R(AVL)
- V
DD
)]
Q
1
= IGBT (BV
CES
> DUT V
R(AVL)
)
L
CURRENT
SENSE
Q
1
V
DD
DUT
R
+
V
DD
I V
V
AVL
I
L
I
L
-
t
0
t
1
t
2
t
Figure 15. Avalanche Energy Test Circuit
Figure 16. Avalanche Current and Voltage
Waveforms
©2002 Fairchild Semiconductor Corporation
ISL9K30120G3 Rev. A
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