PD - 95692A
IRG4BC30U-SPbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard D
2
Pak package
C
UltraFast Speed IGBT
V
CES
= 600V
G
E
V
CE(on) typ.
= 1.95V
@V
GE
= 15V, I
C
= 12A
•
Lead-Free
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
D
2
Pak
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
Units
V
A
V
mJ
W
Thermal Resistance
Parameter
R
θJC
R
θJA
Junction-to-Case
Junction-to-Ambient, ( PCB Mounted,steady-state)*
Typ.
–––
–––
Max.
1.2
40
Units
°C/W
*
When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
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1
02/05/10
IRG4BC30U-SPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)CES
V
(BR)ECS
∆
V
(BR)CES
/
∆
T
J
V
CE(ON)
V
GE(th)
∆V
GE(th)
/∆T
J
g
fe
I
CES
I
GES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
V
GE
= 0V, I
C
= 250µA
Emitter-to-Collector Breakdown Voltage
18
—
—
V
V
GE
= 0V, I
C
= 1.0A
Temperature Coeff. of Breakdown Voltage — 0.63 —
V/°C V
GE
= 0V, I
C
= 1.0mA
— 1.95 2.1
I
C
= 12A
V
GE
= 15V
Collector-to-Emitter Saturation Voltage
— 2.52 —
I
C
= 23A
See Fig.2, 5
V
— 2.09 —
I
C
= 12A , T
J
= 150°C
Gate Threshold Voltage
3.0
—
6.0
V
CE
= V
GE
, I
C
= 250µA
Temperature Coeff. of Threshold Voltage
—
-13
— mV/°C V
CE
= V
GE
, I
C
= 250µA
Forward Transconductance
3.1 8.6
—
S
V
CE
= 100V, I
C
= 12A
—
—
250
V
GE
= 0V, V
CE
= 600V
Zero Gate Voltage Collector Current
µA
—
—
2.0
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
—
— 1000
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA V
GE
= ±20V
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
50
8.1
18
17
9.6
78
97
0.16
0.20
0.36
20
13
180
140
0.73
7.5
1100
73
14
Max. Units
Conditions
75
I
C
= 12A
12
nC
V
CC
= 400V
See Fig.8
27
V
GE
= 15V
—
—
T
J
= 25°C
ns
120
I
C
= 12A, V
CC
= 480V
150
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ See Fig. 10, 11, 13, 14
0.50
—
T
J
= 150°C,
—
I
C
= 12A, V
CC
= 480V
ns
—
V
GE
= 15V, R
G
= 23Ω
—
Energy losses include "tail"
—
mJ See Fig. 13, 14
—
nH
Measured 5mm from package
—
V
GE
= 0V
—
pF
V
CC
= 30V
See Fig.7
—
ƒ = 1.0MHz
Repetitive rating; V
GE
= 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
V
CC
= 80%(V
CES
), V
GE
= 20V, L = 10µH, R
G
= 23Ω,
(See fig. 13a)
Pulse width
≤
80µs; duty factor
≤
0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
www.irf.com
IRG4BC30U-SPbF
6.0
For both:
Triangular wave:
5.0
Load Current (A)
Duty cycle: 50%
T
J
= 125°C
T
sink
55°C
=
Gate drive as specified
Power Dissipation = 1.75W
4.0
Clamp voltage:
80% of rated
Square wave:
3.0
60% of rated
voltage
2.0
1.0
Ideal diodes
0.0
0.1
1
10
A
100
f, Frequency (kHz)
Fig. 1
- Typical Load Current vs. Frequency
(For square wave, I=I
RMS
of fundamental; for triangular wave, I=I
PK
)
100
100
I
C
, Collector-to-Emitter Current (A)
T
J
= 25°C
T
J
= 150°C
10
I
C
, Collector-to-Emitter Current (A)
T
J
= 150°C
10
T
J
= 25°C
1
1
0.1
0.1
1
V
GE
= 15V
20µs PULSE WIDTH
A
10
0.1
5
6
7
8
V
CC
= 10V
5µs PULSE WIDTH
A
9
10
11
12
V
CE
, Collector-to-Emitter Voltage (V)
V
GE
, Gate-to-Emitter Voltage (V)
Fig. 2
- Typical Output Characteristics
Fig. 3
- Typical Transfer Characteristics
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3
IRG4BC30U-SPbF
Maximum DC Collector Current (A
V
CE
, Collector-to-Emitter Voltage (V)
25
V
GE
= 15V
3.0
V
GE
= 15V
80µs PULSE WIDTH
I
C
= 24A
20
2.5
15
I
C
= 12A
2.0
10
5
I
C
= 6.0A
A
-60
-40
-20
0
20
40
60
80
100 120 140 160
0
25
50
75
100
125
A
150
1.5
T
C
, Case Temperature (°C)
T
J
, Junction Temperature (°C)
Fig. 4
- Maximum Collector Current vs.Case
Temperature
Fig. 5
- Collector-to-Emitter Voltage vs.
Junction Temperature
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t2
Notes:
1. Duty factor D = t
1
/t
2
0.01
0.00001
2. Peak T
J
= P
DM
x Z
thJC
+ T C
0.0001
0.001
0.01
0.1
1
10
t
1
, Rectangular Pulse Duration (sec)
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC30U-SPbF
2000
C, Capacitance (pF)
1600
V
GE
, Gate-to-Emitter Voltage (V)
V
GE
= 0V,
f = 1MHz
C
ies
= C
ge
+ C
gc
, C
ce
SHORTED
C
res
= C
gc
C
oes
= C
ce
+ C
gc
20
V
CE
= 400V
I
C
= 12A
16
C
ies
1200
12
800
C
oes
C
res
8
400
4
0
1
10
A
100
0
0
10
20
30
40
A
50
V
CE
, Collector-to-Emitter Voltage (V)
Q
g
, Total Gate Charge (nC)
Fig. 7 -
Typical Capacitance vs.
Collector-to-Emitter Voltage
Fig. 8
- Typical Gate Charge vs.
Gate-to-Emitter Voltage
0.5
Total Switching Losses (mJ)
0.4
Total Switching Losses (mJ)
V
CC
V
GE
T
J
I
C
= 480V
= 15V
= 25°C
= 12A
10
R
G
= 23
Ω
V
GE
= 15V
V
CC
= 480V
I
C
= 24A
1
I
C
= 12A
I
C
= 6.0A
0.3
0.2
0
10
20
30
40
50
A
60
0.1
-60
-40
-20
0
20
40
60
80
A
100 120 140 160
R
G
, Gate Resistance (
Ω
)
T
J
, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Resistance
Fig. 10
- Typical Switching Losses vs.
Junction Temperature
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