IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
TO
-22
0A
B
BUJ103A
Silicon diffused power transistor
Rev. 4 — 8 November 2011
Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
1.2 Features and benefits
Low thermal resistance
Fast switching
1.3 Applications
Electronic lighting ballasts
Inverters
DC-to-DC converters
Motor control systems
1.4 Quick reference data
V
CESM
700 V
P
tot
80 W
I
C
4 A
h
FEsat
= 12.5 (typ)
2. Pinning information
Table 1.
Pin
1
2
3
mb
Pinning
Description
base
collector
emitter
mounting base; connected to collector
3
sym056
Simplified outline
mb
Symbol
2
1
1 2 3
SOT78 (TO-220AB)
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
3. Ordering information
Table 2.
Ordering information
Package
Name
BUJ103A
TO-220AB
Description
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads
Version
SOT78
Type number
4. Limiting values
Table 3.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CBO
V
CEO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
peak collector-emitter voltage
collector-base voltage
collector-emitter voltage
collector current (DC)
peak collector current
base current (DC)
peak base current
total power dissipation
storage temperature
junction temperature
T
mb
25
C;
see
Figure 1
Conditions
V
BE
= 0 V
open emitter
open base
Min
-
-
-
-
-
-
-
-
65
-
Max
700
700
400
4
8
2
4
80
+150
150
Unit
V
V
V
A
A
A
A
W
C
C
120
P
der
(%)
80
001aab993
40
0
0
40
80
120
T
mb
(°C)
160
P
tot
-
P
der
%
=
------------------------
100%
P
tot
25
C
Fig 1.
Normalized total power dissipation as a function of mounting base temperature
BUJ103A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 8 November 2011
2 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
5. Thermal characteristics
Table 4.
Symbol
R
th(j-mb)
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base
thermal resistance from junction to ambient
Conditions
see
Figure 2
in free air
Min
-
-
Typ
-
60
Max
1.56
-
Unit
K/W
K/W
10
Z
th(j-mb)
(K/W)
1
δ
= 0.5
0.2
0.1
10
−1
0.05
0.02
0.01
t
p
T
P
tot
001aab998
δ
=
t
p
T
t
10
−2
10
−5
10
−4
10
−3
10
−2
10
−1
1
t
p
(s)
10
Fig 2.
Transient thermal impedance from junction to mounting base as a function of pulse duration
BUJ103A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 8 November 2011
3 of 13
NXP Semiconductors
BUJ103A
Silicon diffused power transistor
6. Characteristics
Table 5.
Characteristics
T
mb
= 25
C; unless otherwise specified.
Symbol
I
CES
I
CBO
I
CEO
I
EBO
V
CEOsus
V
CEsat
V
BEsat
h
FE
h
FEsat
Parameter
collector-emitter cut-off
current
collector-base cut-off current
collector-emitter cut-off
current
emitter-base cut-off current
collector-emitter sustaining
voltage
collector-emitter saturation
voltage
base-emitter saturation
voltage
DC current gain
DC saturation current gain
Conditions
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
; T
j
= 125
C
V
BE
= 0 V; V
CE
= V
CESMmax
V
CEO
= V
CEOMmax
= 400 V
V
EB
= 7 V; I
C
= 0 A
I
B
= 0 A; I
C
= 10 mA; L = 25 mH;
see
Figure 3
and
4
I
C
= 3.0 A; I
B
= 0.6 A; see
Figure 10
I
C
= 3.0 A; I
B
= 0.6 A; see
Figure 11
I
C
= 1 mA; V
CE
= 5 V; see
Figure 9
I
C
= 500 mA; V
CE
= 5 V
I
C
= 2.0 A; V
CE
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
Dynamic characteristics
Switching times (resistive load); see
Figure 5
and
6
t
on
t
stg
t
f
t
stg
t
f
t
stg
t
f
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
400
-
-
10
13
11
-
Typ
-
-
-
-
-
-
0.25
0.97
17
22
16
12.5
Max
1
2
1
0.1
0.1
-
1
1.5
32
32
22
-
Unit
mA
mA
mA
mA
mA
V
V
V
Static characteristics
turn-on time
storage time
fall time
storage time
fall time
storage time
fall time
I
Con
= 2.5 A; I
Bon
=
I
Boff
= 0.5 A;
R
L
= 75
-
-
-
0.52
2.7
0.3
1.2
30
-
-
0.6
3.3
0.35
1.4
60
1.8
120
s
s
s
s
ns
s
ns
Switching times (inductive load); see
Figure 7
and
8
I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1
H;
V
BB
=
5
V
I
Con
= 2 A; I
Bon
= 0.4 A; L
B
= 1
H;
V
BB
=
5
V; T
j
= 100
C
-
-
-
-
Switching times (inductive load); see
Figure 7
and
8
Measured with half sine-wave voltage (curve tracer).
BUJ103A
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 8 November 2011
4 of 13
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