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VS-20TQ040STRLPBF

产品描述Schottky Diodes & Rectifiers 20 Amp 40 Volt
产品类别分立半导体    二极管   
文件大小257KB,共8页
制造商Vishay(威世)
官网地址http://www.vishay.com
标准
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VS-20TQ040STRLPBF概述

Schottky Diodes & Rectifiers 20 Amp 40 Volt

VS-20TQ040STRLPBF规格参数

参数名称属性值
是否无铅不含铅
是否Rohs认证符合
零件包装代码TO-263
包装说明R-PSSO-G2
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
Base Number Matches1

文档预览

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VS-20TQ035SPbF, VS-20TQ040SPbF, VS-20TQ045SPbF
www.vishay.com
Vishay Semiconductors
High Performance Schottky Rectifier, 20 A
Base
cathode
2
FEATURES
• 150 °C T
J
operation
• Low forward voltage drop
• High frequency operation
• High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
• Guard ring for enhanced ruggedness and long
term reliability
TO-263AB (D
2
PAK)
1
N/C
3
Anode
PRODUCT SUMMARY
Package
I
F(AV)
V
R
V
F
at I
F
I
RM
T
J
max.
Diode variation
E
AS
TO-263AB
(D
2
PAK)
20 A
35 V, 40 V, 45 V
0.51 V
105 mA at 125 °C
150 °C
Single die
27 mJ
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
The VS-20TQ... Schottky rectifier series has been optimized
for very low forward voltage drop, with moderate leakage.
The proprietary barrier technology allows for reliable
operation up to 150 °C junction temperature. Typical
applications are in switching power supplies, converters,
freewheeling diodes, and reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
V
RRM
I
FSM
V
F
T
J
CHARACTERISTICS
Rectangular waveform
Range
t
p
= 5 μs sine
20 A
pk
, T
J
= 125 °C
Range
VALUES
20
35 to 45
1800
0.51
-55 to +150
UNITS
A
V
A
V
°C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
SYMBOL
V
R
V
RWM
VS-20TQ035SPbF
35
VS-20TQ040SPbF
40
VS-20TQ045SPbF
45
UNITS
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current,
see fig. 5
SYMBOL
I
F(AV)
I
FSM
E
AS
I
AR
TEST CONDITIONS
50 % duty cycle at T
C
= 116 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse
Following any rated load
condition and with rated
V
RRM
applied
VALUES
20
1800
400
27
4
mJ
A
A
UNITS
Maximum peak one cycle non-repetitive
surge current, see fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
T
J
= 25 °C, I
AS
= 4 A, L = 3.40 mH
Current decaying linearly to zero in 1 μs
Frequency limited by T
J
maximum V
A
= 1.5 x V
R
typical
Revision: 08-Dec-14
Document Number: 94168
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

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