STTH1R04
Ultrafast recovery diode
Datasheet
-
production data
A
K
Description
The STTH1R04 series uses ST's new 400 V
planar Pt doping technology. The STTH1R04 is
specially suited for switching mode base drive
and transistor circuits.
Packaged in axial and surface mount packages,
this device is intended for use in low voltage, high
frequency inverters, free wheeling and polarity
protection.
Table 1. Device summary
DO-41
DO-15
STTH1R04
STTH1R04Q
Band indicates cathode side.
SMA
STTH1R04A
SMB
STTH1R04U
I
F(AV)
V
RRM
T
j (max)
V
F (typ)
1A
400 V
175 °C
0.9 V
14 ns
Features
•
Negligible switching losses
•
Low forward and reverse recovery times
•
High junction temperature
t
rr (typ)
November 2015
This is information on a product in full production.
DocID14749 Rev 2
1/10
www.st.com
Characteristics
STTH1R04
1
Characteristics
Table 2. Absolute ratings (limiting values at 25 °C, unless otherwise specified)
Symbol
V
RRM
Parameter
Repetitive peak reverse voltage
DO-41
I
F(AV)
Average forward current,
δ
= 0.5
DO-15
SMA
SMB
I
FSM
T
stg
T
j
T
lead
= 100 °C
T
lead
= 105 °C
T
lead
= 125 °C
T
lead
= 140 °C
30
-65 to +175
175
A
°C
°C
1.0
A
Value
400
Unit
V
Surge non repetitive forward current t
p
= 10 ms Sinusoidal
Storage temperature range
Maximum operating junction temperature
(1)
1. On infinite heatsink with 10 mm lead length
Table 3. Thermal parameters
Symbol
R
th(j-l)
Junction to lead
Parameter
Lead length = 10 mm
on infinite heatsink
DO-41
DO-15
SMA
R
th(j-l)
Junction to lead
SMB
25
Value
55
50
°C/W
35
Unit
Table 4. Static electrical characteristics
Symbol
I
R(1)
Parameter
Reverse leakage current
Test conditions
T
j
= 25 °C
T
j
= 125 °C
T
j
= 25 °C
V
F(2)
Forward voltage drop
T
j
= 100 °C
T
j
= 150 °C
1. Pulse test: t
p
= 5 ms,
δ
< 2 %
2. Pulse test: t
p
= 380 µs,
δ
< 2 %
Min
Typ
Max
5
Unit
µA
V
R
= V
RRM
5
50
1.5
I
F
= 1.0 A
1.0
0.9
1.25
1.15
V
To evaluate the conduction losses use the following equation:
P = 0.9 x I
F(AV)
+ 0.250 x I
F
2
(RMS)
2/10
DocID14749 Rev 2
STTH1R04
Characteristics
Table 5. Dynamic characteristics (T
j
= 25 °C unless otherwise stated)
Symbol
Parameter
Test conditions
I
F
= 1 A, dI
F
/dt = -50 A/µs,
V
R
= 30 V, T
j
= 25 °C
I
F
= 1 A, dI
F
/dt = -100 A/µs,
V
R
= 30 V, T
j
= 25 °C
Min
Typ
Max
30
Unit
t
rr
Reverse recovery time
ns
14
2.5
20
3.5
50
3.5
A
ns
V
I
RM
t
fr
V
FP
Reverse recovery current
Forward recovery time
Forward recovery voltage
I
F
= 1 A, dI
F
/dt = -200 A/µs,
V
R
= 320 V, T
j
= 125 °C
I
F
= 1 A
dI
F
/dt = 100 A/µs
V
FR
= 1.1 x V
Fmax
, T
j
= 25 °C
I
F
= 1 A
dI
F
/dt = 100 A/µs
Figure 1. Conduction losses versus
average forward current
1.6
1.4
1.2
Figure 2. Forward voltage drop versus forward
current
50
P(W )
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
I
FM
(A)
45
40
35
T
J
=150°C
(Maximum values)
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
T
30
25
20
15
10
T
J
=25°C
=25°C
(Maximum values)
T
J
=150°C
(Typical values)
I F(AV) (A)
δ
=tp/T
tp
5
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
V
FM
(V)
3.2
3.6
4.0
Figure 3. Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-41)
Z
th(j -a)
/R
th(j -a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Single pulse
DO-41
L
leads
=10mm
Figure 4. Relative variation of thermal
impedance junction to lead
versus pulse duration (DO-15)
Z
th(j -a)
/R
th(j -a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Single pulse
DO-1 5
L
leads
=10mm
t
P
(s)
0.0
1.E-01
1.E+00
t
P
(s)
1.E+01
1.E+02
1.E+03
DocID14749 Rev 2
3/10
10
Characteristics
STTH1R04
Figure 5. Relative variation of thermal
impedance junction to lead
versus pulse duration, SMA
Z
th(j -a)
/R
th(j -a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Single pulse
SMA
S
cu
=1cm2
Figure 6. Relative variation of thermal
impedance junction to lead
versus pulse duration, SMB
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
Z
th(j-a)
/R
th(j-a)
SMB
S
cu
=1cm²
t
P
(s)
0.1
0.0
Single pulse
t
P
(s)
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1.E-03
Figure 7. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
100
F=1MHz
V
OSC
=30mV
RMS
T
j
=25°C
Figure 8. Reverse recovery charges versus
dI
F
/dt (typical values)
40
36
32
28
24
Q
RR
(nC)
I
F
= 1 A
V
R
=320 V
10
20
16
12
8
V
R
(V)
T
j
=125 °C
4
0
T
j
=25 °C
dI
F
/dt(A/µs)
10
100
1000
1
1
10
100
1000
Figure 9. Reverse recovery time versus
dI
F
/dt (typical values)
70
65
60
55
50
45
40
35
30
25
20
15
10
5
0
Figure 10. Peak reverse recovery current
versus dI
F
/dt (typical values)
5.0
t
RR
(ns)
I
F
= 1 A
V
R
=320 V
I
RM
(A)
I
F
= 1 A
V
R
=320 V
4.5
4.0
3.5
3.0
2.5
T
j
=125 °C
T
j
=125 °C
2.0
1.5
T
j
=25 °C
1.0
0.5
T
j
=25 °C
dI
F
/dt(A/µs)
10
100
1000
dI
F
/dt(A/µs)
10
100
1000
0.0
4/10
DocID14749 Rev 2
STTH1R04
Characteristics
Figure 11. Relative variations of dynamic
parameters versus junction temperature
Q
RR
;
;
I
I
RM
[T
j
]
]
/
/
Q
RR
;
;
I
I
RM
[T
j
=125°C]
Q
RR
RM
[T
j
Q
RR
RM
[T
j
=125°C]
1.4
1.2
1.0
0.8
I
F
= 1 A
V
R
=320 V
Figure 12. Transient peak forward voltage
versus dI
F
/dt (typical values)
V
Fp
(V)
30
I
F
=1 A
T
j
=125 °C
25
I
RM
20
15
0.6
0.4
0.2
Q
RR
10
5
T
j
(°C)
0.0
25
50
75
100
125
150
0
0
50
100
150
200
dI
F
/dt(A/µs)
250
300
350
400
450
500
Figure 13. Forward recovery time versus
dI
F
/dt (typical values)
55
50
45
40
35
30
25
20
15
10
5
0
0
50
100
150
200
250
300
350
400
450
500
dI
F
/dt(A/µs)
Figure 14. Thermal resistance versus
lead length (DO-41)
120
t
FR
(ns)
I
F
=1 A
T
j
=125 °C
R
th
(°C/W)
DO-41
R
th(j-a)
100
80
60
R
th(j-l)
40
20
L
leads
(mm)
0
5
10
15
20
25
Figure 15. Thermal resistance junction to
ambient versus lead length, DO-15
Figure 16. Thermal resistance junction to
ambient versus copper surface under each
lead, SMA, SMB,
(epoxy FR4, copper thickness = 35 µm)
R
th(j-a)
(°C/W)
120
R
th(j-a)
(°C/W)
120
DO-15
100
100
SMA
80
80
SMB
60
60
40
40
20
L
leads
(mm)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
20
S
CU
(cm²)
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
DocID14749 Rev 2
5/10
10
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