IRGP4266PbF
IRGP4266-EPbF
Insulated Gate Bipolar Transistor
V
CES
= 650V
I
C
= 90A, T
C
=100°C
t
SC
5.5µs,
T
J(max)
= 175°C
V
CE(ON)
typ. = 1.7V
@ I
C
= 75A
G
E
C
G
C
E
G
C
E
Applications
Industrial Motor Drive
Inverters
UPS
Welding
n-channel
G
Gate
IRGP4266PbF
TO-247AC
IRGP4266-EPbF
TO-247AD
C
Collector
E
Emitter
Features
Low V
CE(ON)
and switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive V
CE (ON)
Temperature Coefficient
5.5µs short circuit SOA
Lead-Free, RoHS compliant
Base part number
IRGP4266PbF
IRGP4266-EPbF
Package Type
TO-247AC
TO-247AD
Benefits
High efficiency in a wide range of applications and
switching frequencies
Improved reliability due to rugged hard switching
performance and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Quantity
Tube
Tube
25
25
Orderable Part Number
IRGP4266PbF
IRGP4266-EPbF
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, V
GE
=20V
Clamped Inductive Load Current, V
GE
=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
650
140
90
300
300
±20
455
230
-40 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Thermal Resistance
R
JC
R
CS
R
JA
1
Parameter
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
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© 2014 International Rectifier
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.33
–––
–––
Units
°C/W
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August 22, 2014
IRGP4266PbF/IRGP4266-EPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Min.
Typ. Max. Units
650
—
—
V
—
570
—
mV/°C
—
1.7
2.1
V
V
CE(on)
Collector-to-Emitter Saturation Voltage
—
2.1
—
V
GE(th)
Gate Threshold Voltage
5.5
—
7.7
V
—
-22
—
mV/°C
V
GE(th)
/TJ Threshold Voltage temp. coefficient
gfe
Forward Transconductance
—
43
—
S
—
1.0
25
µA
I
CES
Collector-to-Emitter Leakage Current
mA
—
1.1
—
I
GES
Gate-to-Emitter Leakage Current
—
—
±100
nA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max. Units
Q
g
Total Gate Charge (turn-on)
—
140
210
Q
ge
Gate-to-Emitter Charge (turn-on)
—
40
60
nC
Gate-to-Collector Charge (turn-on)
—
60
90
Q
gc
Turn-On Switching Loss
—
3.2
4.2
E
on
E
off
Turn-Off Switching Loss
—
1.7
2.6
mJ
Total Switching Loss
—
4.9
6.8
E
total
t
d(on)
Turn-On delay time
—
80
95
t
r
Rise time
—
85
105
ns
t
d(off)
Turn-Off delay time
—
200
220
t
f
Fall time
—
40
55
E
on
Turn-On Switching Loss
—
4.6
—
E
off
Turn-Off Switching Loss
—
2.4
—
mJ
E
total
Total Switching Loss
—
7.0
—
t
d(on)
Turn-On delay time
—
60
—
t
r
Rise time
—
95
—
ns
t
d(off)
Turn-Off delay time
—
205
—
t
f
Fall time
—
60
—
C
ies
Input Capacitance
—
4300
—
C
oes
Output Capacitance
—
230
—
pF
Reverse Transfer Capacitance
—
120
—
C
res
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
5.5
—
—
µs
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/T
J
Temperature Coeff. of Breakdown Voltage
Conditions
V
GE
= 0V, I
C
= 100µA
V
GE
= 0V, I
C
= 1.0mA (25°C-175°C)
I
C
= 75A, V
GE
= 15V, T
J
= 25°C
I
C
= 75A, V
GE
= 15V, T
J
= 175°C
V
CE
= V
GE
, I
C
= 2.1mA
V
CE
=V
GE
, I
C
= 2.1mA (25°C - 175°C)
V
CE
= 50V, I
C
= 75A, PW = 20µs
V
GE
= 0V, V
CE
= 650V
V
GE
= 0V, V
CE
= 650V, T
J
= 175°C
V
GE
= ±20V
Conditions
I
C
= 75A
V
GE
= 15V
V
CC
= 400V
I
C
= 75A, V
CC
= 400V, V
GE
= 15V
R
G
= 10, L = 200µH, T
J
= 25°C
Energy losses include tail & diode
reverse recovery
I
C
= 75A, V
CC
= 400V, V
GE
=15V
R
G
=10, L=200µH,T
J
= 175°C
Energy losses include tail & diode
reverse recovery
V
GE
= 0V
V
CC
= 30V
f = 1.0Mhz
T
J
= 175°C, I
C
= 300A
V
CC
= 520V, Vp
≤
650V
Rg = 50, V
GE
= +20V to 0V
T
J
= 150°C,V
CC
= 400V, Vp
≤600V
Rg = 50, V
GE
= +15V to 0V
Notes:
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 50µH, R
G
= 50.
R
is measured at T
J
of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V
(BR)CES
safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2014 International Rectifier
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August 22, 2014
140
120
100
80
60
40
20
0.1
1
f , Frequency ( kHz )
IRGP4266PbF/IRGP4266-EPbF
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 245W
Load Current ( A )
Square Wave:
V
CC
I
Diode as specified
10
100
Fig. 1
- Typical Load Current vs. Frequency
(Load Current= I
RMS
of fundamental)
160
140
120
100
80
60
40
20
0
25
50
75
100
TC (°C)
125
150
175
0
25
50
75
100
TC (°C)
125
150
175
Ptot (W)
500
400
300
IC (A)
200
100
Fig. 2
- Maximum DC Collector Current vs.
Case Temperature
1000
IC, Collector-to -Emitter Current (A)
Fig. 3
- Power Dissipation vs.
Case Temperature
1000
OPERATION IN THIS AREA
LIMITED BY V (on)
CE
100
1msec
100µsec
100
IC (A)
10
10msec
1
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
0.1
DC
1
100
1000
10
100
V CE (V)
1000
0.01
VCE, Collector-to-Emitter Voltage (V)
Fig. 4
- Forward SOA
3
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© 2014 International Rectifier
Fig. 5
- Reverse Bias SOA
T
J
= 175°C; V
GE
= 20V
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August 22, 2014
300
VGE = 18V
250
200
VGE = 15V
VGE = 12V
VGE = 10V
ICE (A)
IRGP4266PbF/IRGP4266-EPbF
300
250
200
150
100
50
0
0
2
4
6
VCE (V)
8
10
0
2
4
6
8
10
V CE (V)
V GE = 18V
V GE = 15V
V GE = 12V
V GE = 10V
V GE = 8.0V
ICE (A)
VGE = 8.0V
150
100
50
0
Fig. 6
- Typ. IGBT Output Characteristics
T
J
= -40°C; tp = 20µs
300
VGE = 18V
250
200
ICE (A)
Fig. 7
- Typ. IGBT Output Characteristics
T
J
= 25°C; tp = 20µs
10
VGE = 15V
VGE = 12V
VGE = 10V
V CE (V)
8
ICE = 38A
ICE = 75A
ICE = 150A
VGE = 8.0V
150
100
50
0
0
2
4
6
VCE (V)
8
10
6
4
2
0
6
8
10
12
14
16
18
20
V GE (V)
Fig. 8
- Typ. IGBT Output Characteristics
T
J
= 175°C; tp = 20µs
10
10
Fig. 9
- Typical V
CE
vs. V
GE
T
J
= -40°C
8
8
V CE (V)
V CE (V)
6
ICE = 38A
ICE = 75A
ICE = 150A
6
ICE = 38A
ICE = 75A
ICE = 150A
4
4
2
2
0
8
10
12
14
V GE (V)
16
18
20
0
6
8
10
12
14
16
18
20
V GE (V)
Fig. 10
- Typical V
CE
vs. V
GE
T
J
= 25°C
4
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© 2014 International Rectifier
Fig. 11
- Typical V
CE
vs. V
GE
T
J
= 175°C
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August 22, 2014
300
18000
16000
250
200
150
100
50
0
4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
TJ = 25°C
TJ = 175°C
14000
12000
IRGP4266PbF/IRGP4266-EPbF
IC, Collector-to-Emitter Current(A)
Energy (µJ)
10000
8000
6000
4000
2000
0
20
40
60
80
EON
EOFF
100
120
140
160
IC (A)
Fig. 12
- Typ. Transfer Characteristics
V
CE
= 50V; tp = 20µs
1000
Fig. 13
- Typ. Energy Loss vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
12000
tdOFF
Swiching Time (ns)
8000
100
tdON
tF
tR
10
0
20
40
60
80
IC (A)
100 120 140 160
0
0
20
Energy (µJ)
EON
EOFF
4000
40
60
80
100
RG (
)
Fig. 14
- Typ. Switching Time vs. I
C
T
J
= 175°C; L = 200µH; V
CE
= 400V, R
G
= 10; V
GE
= 15V
10000
Fig. 15
- Typ. Energy Loss vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
20
Tsc
15
Isc
300
400
Swiching Time (ns)
1000
Current (A)
tR
tF
Time (µs)
tdOFF
10
200
100
tdON
10
0
20
40
60
80
5
100
0
100
8
10
12
V GE (V)
14
16
RG (
)
0
Fig. 16
- Typ. Switching Time vs. R
G
T
J
= 175°C; L = 200µH; V
CE
= 400V, I
CE
= 75A; V
GE
= 15V
5
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© 2014 International Rectifier
Fig. 17
- V
GE
vs. Short Circuit Time
V
CC
= 400V; T
C
= 150°C
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August 22, 2014
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