PD - 97069
IRF7853PbF
HEXFET
®
Power MOSFET
Applications
l
Primary Side Switch in Bridge Topology
V
DSS
R
DS(on)
max
I
D
in Universal Input (36-75Vin) Isolated
100V 18m:@VGS = 10V 8.3A
DC-DC Converters
l
Primary Side Switch in Push-Pull
Topology for 18-36Vin Isolated DC-DC
A
Converters
A
1
8
D
S
l
Secondary Side Synchronous
2
7
Rectification Switch for 15Vout
S
D
l
Suitable for 48V Non-Isolated
3
6
S
D
Synchronous Buck DC-DC Applications
4
5
G
D
Benefits
l
Low Gate to Drain Charge to Reduce
SO-8
Top View
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
dv/dt
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Max.
100
± 20
8.3
6.6
66
2.5
0.02
5.1
-55 to + 150
Units
V
A
c
Maximum Power Dissipation
Linear Derating Factor
Peak Diode Recovery dv/dt
Operating Junction and
W
W/°C
V/ns
°C
h
Storage Temperature Range
Thermal Resistance
Parameter
R
θJL
R
θJA
Junction-to-Drain Lead
Junction-to-Ambient (PCB Mount)
Typ.
Max.
20
50
Units
°C/W
ei
–––
–––
Notes
through
are on page 8
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1
1/5/06
IRF7853PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
100
–––
–––
3.0
–––
–––
–––
–––
–––
0.11
14.4
–––
–––
–––
–––
–––
–––
–––
18
4.9
20
250
100
-100
nA
V
mΩ
V
µA
Conditions
V
GS
= 0V, I
D
= 250µA
V
GS
= 10V, I
D
= 8.3A
V/°C Reference to 25°C, I
D
= 1mA
f
V
DS
= V
GS
, I
D
= 100µA
V
DS
= 100V, V
GS
= 0V
V
DS
= 100V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Q
g
Q
gs
Q
gd
R
G
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min. Typ. Max. Units
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
28
7.8
10
1.4
13
6.6
26
6.0
1640
310
71
1600
180
320
–––
39
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
pF
ns
Ω
V
DD
= 50V
I
D
= 5.0A
R
G
= 6.2Ω
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
nC
S
I
D
= 5.0A
V
DS
= 50V
V
GS
= 10V
Conditions
V
DS
= 25V, I
D
= 5.0A
f
f
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 80V, ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 80V
Max.
610
5.0
g
Avalanche Characteristics
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Ã
d
Typ.
–––
–––
Units
mJ
A
Diode Characteristics
Parameter
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
45
84
2.3
A
66
1.3
68
130
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
S
D
Ã
p-n junction diode.
T
J
= 25°C, I
S
= 5.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 5.0A, V
DD
= 25V
di/dt = 100A/µs
f
f
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRF7853PbF
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
ID, Drain-to-Source Current (A)
10
BOTTOM
ID, Drain-to-Source Current (A)
10
BOTTOM
1
1
4.5V
0.1
0.01
0.01
4.5V
0.1
≤
60µs PULSE WIDTH
Tj = 25°C
1
10
100
≤
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100.0
2.5
RDS(on) , Drain-to-Source On Resistance
ID = 8.3A
2.0
ID, Drain-to-Source Current
(Α)
VGS = 10V
10.0
TJ = 150°C
(Normalized)
1.5
1.0
TJ = 25°C
1.0
VDS = 25V
0.1
3.0
4.0
5.0
≤
60µs PULSE WIDTH
6.0
7.0
0.5
-60 -40 -20
0
20
40
60
80 100 120 140 160
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
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3
IRF7853PbF
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
20
VGS, Gate-to-Source Voltage (V)
ID= 5.0A
16
VDS = 80V
VDS= 50V
VDS= 20V
10000
C, Capacitance (pF)
Ciss
1000
12
Coss
Crss
8
100
4
10
1
10
100
0
0
10
20
30
40
50
QG Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
100.0
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
10.0
TJ = 150°C
100
100µsec
10
1msec
10msec
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
0
1
10
100
1000
1.0
TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRF7853PbF
10
V
DS
8
R
D
V
GS
R
G
ID , Drain Current (A)
D.U.T.
+
6
-
V
DD
10V
4
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
2
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
0
TC , CaseTemperature (°C)
Fig 9.
Maximum Drain Current vs.
Ambient Temperature
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
100
D = 0.50
Thermal Response ( Z thJA )
10
0.20
0.10
0.05
0.02
0.01
R
1
R
1
τ
J
τ
1
τ
2
R
2
R
2
R
3
R
3
τ
3
1
τ
J
Ri (°C/W)
τi
(sec)
τ
A
C
0.00474
τ
7.016
26.95
16.04
0.04705
2.3619
0.1
τ
1
τ
2
τ
3
Ci=
τi/Ri
Ci
τi/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = Pdm x Zthja + Ta
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
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