N-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
N-Channel
12
R
DS(on)
() MAX.
0.028 at V
GS
= 4.5 V
0.033 at V
GS
= 2.5 V
0.042 at V
GS
= 1.8 V
0.054 at V
GS
= -4.5 V
P-Channel
-20
0.070 at V
GS
= -2.5 V
0.104 at V
GS
= -1.8 V
0.165 at V
GS
= -1.5 V
I
D
(A)
4.5
a
4.5
a
4.5
a
FEATURES
Q
g
(TYP.)
6.2 nC
• TrenchFET
®
Power MOSFETs
• Typical ESD protection: N-channel 2400 V
P-channel 2000 V
• 100 % R
g
tested
• Material categorization: For definitions of
compliance please see
www.vishay.com/doc?99912
-4.5
a
-4.5
a
-4.5
a
-1.5
9.5 nC
APPLICATIONS
• Portable devices such as smart phones, tablet PCs and
mobile computing
- Load switches
- Power management
- DC/DC converters
D
1
S
2
PowerPAK
®
SC-70-6L
Dual
S
2
4
G
2
5
D
1
6
D
1
D
2
1
mm
.05
2
Top View
3
D
2
Bottom View
2
G
1
1
S
1
Marking Code:
EK
Ordering Information:
SiA537EDJ-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
T
C
= 25 °C
Continuous Drain Current (T
J
= 150 °C)
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current (t = 100 μs)
Source Drain Current Diode Current
T
C
= 25 °C
T
A
= 25 °C
T
C
= 25 °C
Maximum Power Dissipation
T
C
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
d,e
T
J
, T
stg
P
D
I
DM
I
S
I
D
SYMBOL
V
DS
V
GS
4.5
a
4.5
a
4.5
a,b,c
4.5
a,b,c
20
4.5
a
1.6
b,c
7.8
5
1.9
b,c
1.2
b,c
-55 to 150
260
N-CHANNEL
12
±8
-4.5
a
-4.5
a
-4.5
a,b,c
-4.5
a,b,c
-15
-4.5
a
-1.6
b,c
7.8
5
1.9
b,c
1.2
b,c
°C
W
A
P-CHANNEL
-20
UNIT
V
S13-2635-Rev. A, 30-Dec-13
2.
2.
05
m
m
m
G
1
G
2
S
1
N-Channel MOSFET
D
2
P-Channel MOSFET
Document Number: 62934
1
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA537EDJ
www.vishay.com
Vishay Siliconix
N-CHANNEL
TYP.
52
12.5
MAX.
65
16
P-CHANNEL
TYP.
52
12.5
MAX.
65
16
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum Junction-to-Ambient
b,f
Maximum Junction-to-Case (Drain)
t
5s
Steady State
SYMBOL
R
thJA
R
thJC
UNIT
°C/W
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 5 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 110 °C/W.
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Static
Drain-Source Breakdown Voltage
V
DS
Temperature Coefficient
V
GS(th)
Temperature Coefficient
Gate Threshold Voltage
V
DS
V
DS
/T
J
V
GS(th)
/T
J
V
GS(th)
V
GS
= 0 V, I
D
= 250 μA
V
GS
= 0 V, I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
I
D
= 250 μA
I
D
= -250 μA
V
DS
= V
GS
, I
D
= 250 μA
V
DS
= V
GS
, I
D
= -250 μA
V
DS
= 0 V, V
GS
= ± 4.5 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
V
DS
= 12 V, V
GS
= 0 V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -20 V, V
GS
= 0 V
V
DS
= 12 V, V
GS
= 0 V, T
J
= 55 °C
V
DS
= -20 V, V
GS
= 0 V, T
J
= 55 °C
On-State Drain Current
b
I
D(on)
V
DS
5 V, V
GS
= 4.5 V
V
DS
-5 V, V
GS
= -4.5 V
V
GS
= 4.5 V, I
D
= 5.2 A
V
GS
= -4.5 V, I
D
= -3.8 A
V
GS
= 2.5 V, I
D
= 4.8 A
Drain-Source On-State Resistance
b
R
DS(on)
V
GS
= -2.5 V, I
D
= -3.3 A
V
GS
= 1.8 V, I
D
= 2.5 A
V
GS
= -1.8 V, I
D
= -1 A
V
GS
= -1.5 V, I
D
= -0.5 A
Forward Transconductance
b
g
fs
V
DS
= 6 V, I
D
= 5.2 A
V
DS
= -6 V, I
D
= -3.6 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
P-Ch
N-Ch
P-Ch
12
-20
-
-
-
-
0.4
-0.4
-
-
-
-
-
-
-
-
10
-10
-
-
-
-
-
-
-
-
-
-
-
8
-15
-2.5
2.5
-
-
-
-
-
-
-
-
-
-
-
-
0.023
0.044
0.027
0.057
0.035
0.075
0.097
23
11
-
-
-
-
-
-
1
-1
± 0.5
±3
±5
± 30
1
-1
10
-10
-
-
0.028
0.054
0.033
0.070
0.042
0.104
0.165
-
-
S
A
μA
V
mV/°C
V
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
2
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA537EDJ
www.vishay.com
SPECIFICATIONS
(T
J
= 25 °C, unless otherwise noted)
PARAMETER
Dynamic
a
Vishay Siliconix
SYMBOL
TEST CONDITIONS
N-Ch
N-Channel
V
DS
= 6 V, V
GS
= 0 V, f = 1 MHz
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
V
DS
= 6 V, V
GS
= 8 V, I
D
= 6.8 A
V
DS
= -10 V, V
GS
= -8 V, I
D
= -4.9 A
N-Channel
V
DS
= 6 V, V
GS
= 4.5 V, I
D
= 6.8 A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.8
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
455
770
190
90
150
81
10.5
16.3
6.2
9.5
0.8
1.4
1.6
2.3
4
5.1
10
15
12
15
25
30
12
10
5
7
10
12
20
25
10
10
-
-
-
-
0.8
-0.9
25
13
10
5.5
13
7.5
12
5.5
MAX.
-
-
-
-
-
-
16
25
9.5
14.5
-
-
-
-
8
10
15
25
20
25
40
45
20
15
10
16
15
20
30
40
15
15
4.5
-4.5
20
-15
1.2
-1.2
50
25
20
12
-
-
-
-
pF
UNIT
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
iss
C
oss
P-Channel
V
DS
= -10 V, V
GS
= 0 V, f = 1 MHz
C
rss
Total Gate Charge
Q
g
nC
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
a
Q
gs
Q
gd
R
g
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
P-Channel
V
DS
= -10 V, V
GS
= -4.5 V, I
D
= -4.9 A
f = 1 MHz
N-Channel
V
DD
= 6 V, R
L
= 1.1
I
D
5.4 A, V
GEN
= 4.5 V, R
g
= 1
P-Channel
V
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -4.5 V, R
g
= 1
ns
N-Channel
V
DD
= 6 V, R
L
= 1.3
I
D
5.4 A, V
GEN
= 8 V, R
g
= 1
P-Channel
V
DD
= -10 V, R
L
= 2.6
I
D
-3.9 A, V
GEN
= -8 V, R
g
= 1
I
S
I
SM
V
SD
t
rr
Q
rr
t
a
t
b
T
C
= 25 °C
A
I
S
= 4.8 A, V
GS
= 0 V
I
S
= -3.9 A, V
GS
= 0 V
V
ns
nC
N-Channel
I
F
= 5.4 A, dI/dt = 100 A/μs, T
J
= 25 °C
P-Channel
I
F
= -3.9 A, dI/dt = -100 A/μs, T
J
= 25 °C
ns
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width
300 μs, duty cycle
2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-2635-Rev. A, 30-Dec-13
Document Number: 62934
3
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA537EDJ
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
4
10
-2
Vishay Siliconix
T
J
= 25 °C
I
GSS
- Gate Current (mA)
I
GSS
- Gate Current (A)
3
10
-3
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9
T
J
= 25 °C
T
J
= 150 °C
2
1
0
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
10
-10
0
3
6
9
12
15
V
GS
- Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
20
V
GS
= 5 V thru 2 V
16
I
D
- Drain Current (A)
I
D
- Drain Current (A)
10
8
12
V
GS
= 1.5 V
6
8
4
T
C
= 25 °C
2
4
V
GS
= 1 V
0
0.0
T
C
= 125 °C
0
0.0
T
C
= - 55 °C
0.3
0.6
0.9
1.2
V
GS
- Gate-to-Source Voltage (V)
1.5
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
800
Transfer Characteristics
0.08
R
DS(on)
- On-Resistance (Ω)
V
GS
= 1.8 V
0.04
V
GS
= 2.5 V
0.02
C - Capacitance (pF)
0.06
600
C
iss
400
C
oss
200
C
rss
V
GS
= 4.5 V
0.00
0
5
10
15
I
D
- Drain Current (A)
20
0
0
3
6
9
12
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
S13-2635-Rev. A, 30-Dec-13
Capacitance
Document Number: 62934
4
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SiA537EDJ
www.vishay.com
N-CHANNEL TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted)
8
R
DS(on)
- On-Resistance (Normalized)
I
D
= 6.8 A
6
V
DS
= 6 V
4
V
DS
= 3 V
V
DS
= 9.6 V
1.5
1.4
V
GS
= 1.8 V; I
D
= 2.5 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
- 50
V
GS
= 4.5 V, 2.5 V; I
D
= 5.5 A
Vishay Siliconix
V
GS
- Gate-to-Source Voltage (V)
2
0
0
4
8
Q
g
- Total Gate Charge (nC)
12
- 25
0
25
50
75
100
125
150
T
J
- Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
100
0.08
R
DS(on)
- On-Resistance (Ω)
I
S
- Source Current (A)
0.06
I
D
= 2.5 A; T
J
= 125 °C
I
D
= 5.2 A; T
J
= 125 °C
10
T
J
= 150 °C
T
J
= 25 °C
0.04
I
D
= 2.5 A;
T
J
= 25 °C
I
D
= 5.2 A; T
J
= 25 °C
1
0.02
0.1
0.0
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
V
SD
- Source-to-Drain Voltage (V)
1
2
3
4
V
GS
- Gate-to-Source Voltage (V)
5
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.8
20
0.7
I
D
= 250 µA
0.6
V
GS(th)
(V)
Power (W)
15
0.5
10
0.4
5
0.3
0.2
- 50
- 25
0
25
50
75
100
125
150
0
0.001
0.01
0.1
T
J
- Temperature (°C)
1
Pulse (s)
10
100
1000
Threshold Voltage
S13-2635-Rev. A, 30-Dec-13
Single Pulse Power (Junction-to-Ambient)
Document Number: 62934
5
For technical questions, contact:
pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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