STP40NF12
N-channel 120V - 0.028Ω - 40A TO-220
Low gate charge STripFET™ II Power MOSFET
General features
Type
STP40NF12
■
■
■
V
DSS
120V
R
DS(on)
<0.032Ω
I
D
40A
Exceptional dv/dt capability
100% avalanche tested
Application oriented characterization
TO-220
3
1
2
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters for Telecom
and Computer application. It is also intended for
any application with low gate charge drive
requirements.
Internal schematic diagram
Applications
■
Switching application
Order codes
Part number
STP40NF12
Marking
P40NF12
Package
TO-220
Packaging
Tube
January 2007
Rev 3
1/12
www.st.com
12
Contents
STP40NF12
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
............................ 6
3
4
5
Test circuit
................................................ 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STP40NF12
Electrical ratings
1
Electrical ratings
Table 1.
Symbol
V
DS
V
GS
I
D
I
D
I
DM (1)
P
TOT
dv/dt
(2)
E
AS (3)
T
stg
T
j
Absolute maximum ratings
Parameter
Drain-source voltage (v
gs
= 0)
Gate- source voltage
Drain current (continuous) at T
C
= 25°C
Drain current (continuous) at T
C
= 100°C
Drain current (pulsed)
Total dissipation at T
C
= 25°C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
– 55 to 175
Max. operating junction temperature
°C
Value
120
±20
40
28
160
150
1
14
150
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
1. Pulse width limited by safe operating area
2. I
SD
≤
40A, di/dt
≤
600A/µs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX.
3. Starting T
j
= 25°C, I
D
= 40A, V
DD
=50V
Table 2.
R
thj-a
T
l
Thermal data
1
62.5
300
°C/W
°C/W
°C
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
R
thj-case
Thermal resistance junction-case Max
3/12
Electrical characteristics
STP40NF12
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 3.
Symbol
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
On/off states
Parameter
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
GS
= 0)
Gate-body leakage
current (V
DS
= 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
I
D
= 250 µA, V
GS
= 0
V
DS
= Max rating
V
DS
=Max rating,T
C
=125°C
V
GS
= ± 20V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 20A
2
2.8
0.028
Min.
120
1
10
±100
4
0.032
Typ.
Max.
Unit
V
µA
µA
nA
V
Ω
Table 4.
Symbol
g
fs (1)
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
Dynamic
Parameter
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
= 80V, I
D
= 40A,
V
GS
= 10V
V
DS
= 25V, f = 1 MHz,
V
GS
= 0
Test conditions
V
DS
= 25V
,
I
D
=20A
Min.
Typ.
40
1880
265
110
60
11
21
80
Max.
Unit
S
pF
pF
pF
nC
nC
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5.
Table 5.
Symbol
t
d(on)
t
r
t
d(off)
t
f
Switching times
Parameter
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
Test conditions
V
DD
= 50V, I
D
= 20A
R
G
= 4.7Ω V
GS
= 10V
(see Figure 13)
V
DD
= 50V, I
D
= 20A,
R
G
= 4.7Ω, V
GS
= 10V
(see Figure 13)
Min.
Typ.
28
63
84
28
Max.
Unit
ns
ns
ns
ns
4/12
STP40NF12
Table 6.
Symbol
I
SD
I
SDM (1)
V
SD (2)
t
rr
Q
rr
I
RRM
Electrical characteristics
Source drain diode
Parameter
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 40A, V
GS
= 0
I
SD
= 40A, V
DD
= 25V
di/dt = 100A/µs,
T
j
= 150°C
(see Figure 15)
114
456
8
Test conditions
Min.
Typ.
Max
40
160
1.3
Unit
A
A
V
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
5/12
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