PD - 97308C
Applications
l
High Efficiency Synchronous Rectification in
SMPS
l
Uninterruptible Power Supply
l
High Speed Power Switching
l
Hard Switched and High Frequency Circuits
G
IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
HEXFET
®
Power MOSFET
D
Benefits
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche SOA
l
Enhanced body diode dV/dt and dI/dt
Capability
S
V
DSS
R
DS(on)
typ.
max.
I
D
D
75V
7.34m
9.0m
80A
D
:
:
D
G
D
S
G
S
G
D
S
TO-220AB
IRFB3607PbF
D
2
Pak
IRFS3607PbF
TO-262
IRFSL3607PbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
T
J
T
STG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
d
56
80
310
140
Units
A
W
W/°C
V
°C
0.96
± 20
-55 to + 175
300
10lb in (1.1N m)
120
46
14
x
x
Avalanche Characteristics
E
AS (Thermally limited)
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Ã
e
mJ
A
mJ
Repetitive Avalanche Energy
g
Typ.
–––
0.50
–––
–––
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Junction-to-Case
k
Parameter
Max.
1.045
–––
62
40
Units
°C/W
Case-to-Sink, Flat Greased Surface, TO-220
Junction-to-Ambient, TO-220
j
Junction-to-Ambient (PCB Mount) , D Pak
2
jk
www.irf.com
1
01/20/12
IRFB/S/SL3607PbF
Static @ T
J
= 25°C (unless otherwise specified)
Symbol
V
(BR)DSS
V
(BR)DSS
/T
J
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
75
–––
–––
2.0
–––
–––
–––
–––
––– –––
0.096 –––
7.34 9.0
–––
4.0
–––
20
––– 250
––– 100
––– -100
V
V/°C
m
V
μA
nA
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 5mA
V
GS
= 10V, I
D
= 46A
V
DS
= V
GS
, I
D
= 100μA
V
DS
= 75V, V
GS
= 0V
V
DS
= 60V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
g
d
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
gfs
Q
g
Q
gs
Q
gd
Q
sync
R
G(int)
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
eff. (ER)
C
oss
eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
g
- Q
gd
)
Internal Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min. Typ. Max. Units
115
–––
–––
–––
–––
–––
Conditions
V
DS
= 50V, I
D
= 46A
I
D
= 46A
V
DS
= 38V
V
GS
= 10V
I
D
= 46A, V
DS
=0V, V
GS
= 10V
h
j
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
56
13
16
40
0.55
16
110
43
96
3070
280
130
380
610
–––
84
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
nC
g
ns
pF
V
DD
= 49V
I
D
= 46A
R
G
= 6.8
V
GS
= 10V
V
GS
= 0V
V
DS
= 50V
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 60V
V
GS
= 0V, V
DS
= 0V to 60V
g
j
h
D
Diode Characteristics
Symbol
I
S
I
SM
V
SD
dv/dt
t
rr
Q
rr
I
RRM
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
80
Conditions
MOSFET symbol
showing the
integral reverse
G
A
Ãd
310
S
p-n junction diode.
––– –––
1.3
V T
J
= 25°C, I
S
= 46A, V
GS
= 0V
–––
27
––– V/ns T
J
= 175°C, I
S
= 46A, V
DS
= 75V
–––
33
50
ns T
J
= 25°C
V
R
= 64V,
I
F
= 46A
–––
39
59
T
J
= 125°C
di/dt = 100A/μs
–––
32
48
nC T
J
= 25°C
–––
47
71
T
J
= 125°C
–––
1.9
–––
A T
J
= 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
g
f
g
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.12mH
R
G
= 25, I
AS
= 46A, V
GS
=10V. Part not recommended for use
above this value.
I
SD
46A, di/dt
1920A/μs, V
DD
V
(BR)DSS
, T
J
175°C.
Pulse width
400μs; duty cycle
2%.
C
oss
eff. (TR) is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
C
oss
eff. (ER) is a fixed capacitance that gives the same energy as
C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom-
mended footprint and soldering techniques refer to application note #AN-994.
R
is measured at T
J
approximately 90°C.
2
www.irf.com
IRFB/S/SL3607PbF
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
1000
TOP
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
4.5V
4.5V
60μs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
V DS, Drain-to-Source Voltage (V)
10
0.1
1
60μs PULSE WIDTH
Tj = 175°C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
1000
RDS(on) , Drain-to-Source On Resistance
Fig 2.
Typical Output Characteristics
3.0
ID = 80A
2.5
VGS = 10V
ID, Drain-to-Source Current (A)
100
10
T J = 175°C
T J = 25°C
(Normalized)
2.0
1.5
1
VDS = 25V
60μs PULSE WIDTH
0.1
2
3
4
5
6
7
8
1.0
0.5
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
100000
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, C ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Fig 4.
Normalized On-Resistance vs. Temperature
12.0
ID= 46A
VGS , Gate-to-Source Voltage (V)
10.0
8.0
6.0
4.0
2.0
0.0
C, Capacitance (pF)
VDS= 24V
VDS= 15V
10000
Ciss
1000
Coss
Crss
100
1
10
VDS, Drain-to-Source Voltage (V)
100
0
10
20
30
40
50
60
Q G , Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
3
IRFB/S/SL3607PbF
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100μsec
1msec
ISD, Reverse Drain Current (A)
100
T J = 175°C
10
T J = 25°C
1
VGS = 0V
0.1
0.0
0.5
1.0
1.5
2.0
VSD, Source-to-Drain Voltage (V)
100
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10msec
DC
10
VDS, Drain-to-Source Voltage (V)
100
Fig 7.
Typical Source-Drain Diode Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
70
60
ID, Drain Current (A)
Fig 8.
Maximum Safe Operating Area
100
Id = 5mA
95
90
85
80
75
70
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
50
40
30
20
10
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
1.20
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10.
Drain-to-Source Breakdown Voltage
500
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
ID
TOP
5.6A
11A
BOTTOM 46A
1.00
0.80
Energy (μJ)
0.60
0.40
0.20
0.00
-10
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Starting T J , Junction Temperature (°C)
4
Fig 11.
Typical C
OSS
Stored Energy
Fig 12.
Maximum Avalanche Energy vs. DrainCurrent
www.irf.com
IRFB/S/SL3607PbF
10.00
Thermal Response ( Z thJC ) °C/W
1.00
D = 0.50
0.20
0.10
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
J
R
1
R
1
J
1
2
R
2
R
2
R
3
R
3
3
R
4
R
4
C
4
Ri (°C/W)
i
(sec)
0.01109
0.26925
0.49731
0.26766
0.000003
0.000130
0.001301
0.008693
1
2
3
4
0.01
Ci=
iRi
Ci iRi
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
0.00
1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
Avalanche Current (A)
100
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming
j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
1.0E-01
Fig 14.
Typical Avalanche Current vs.Pulsewidth
150
125
100
75
50
25
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 46A
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
jmax
. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
D (ave)
= Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. I
av
= Allowable avalanche current.
7.
T
=
Allowable rise in junction temperature, not to exceed T
jmax
(assumed as
25°C in Figure 14, 15).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche = t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see Figures 13)
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
DT/
Z
thJC
I
av
= 2DT/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 15.
Maximum Avalanche Energy vs. Temperature
www.irf.com
EAR , Avalanche Energy (mJ)
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
