VS-10RIA Series
www.vishay.com
Vishay Semiconductors
Medium Power Phase Control Thyristors
(Stud Version), 10 A
FEATURES
• Improved glass passivation for high reliability
and exceptional stability at high temperature
• High dI
F
/dt and dV/dt capabilities
• Standard package
• Low thermal resistance
TO-48 (TO-208AA)
• Metric threads version available
• Types up to 1200 V V
DRM
/V
RRM
• Designed and qualified for industrial and consumer level
10 A
PRIMARY CHARACTERISTICS
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
Package
Circuit configuration
100 V, 200 V, 400 V, 600 V, 800 V,
1000 V, 1200 V
1.75 V
60 mA
-65 °C to +125 °C
TO-48 (TO-208AA)
Single SCR
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
• Medium power switching
• Phase control applications
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
V
DRM
/V
RRM
t
q
T
J
Typical
50 Hz
60 Hz
50 Hz
60 Hz
T
C
TEST CONDITIONS
VALUES
10
85
25
225
240
255
233
100 to 1200
110
-65 to +125
UNITS
A
°C
A
A
A
2
s
V
μs
°C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
10
20
40
VS-10RIA
60
80
100
120
V
DRM
/V
RRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
(1)
V
100
200
400
600
800
1000
1200
V
RSM
, MAXIMUM NON-REPETITIVE
PEAK VOLTAGE
(2)
V
150
300
500
700
900
1100
1300
10
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
20
Notes
(1)
Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/μs
(2)
For voltage pulses with t
5 ms
p
Revision: 21-Sep-17
Document Number: 93689
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10RIA Series
www.vishay.com
Vishay Semiconductors
SYMBOL
I
T(AV)
I
T(RMS)
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
TEST CONDITIONS
180° conduction, half sine wave
VALUES
10
85
25
225
240
190
Sinusoidal half wave,
initial T
J
=T
J
maximum
200
255
233
180
165
2550
1.10
1.39
24.3
m
r
t2
V
TM
I
H
I
L
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 32 A, T
J
= 25 °C, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
16.7
1.75
130
200
V
mA
A
2
s
V
A
2
s
A
UNITS
A
°C
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
Maximum I
2
t for fusing
I
2
t
Maximum
I
2
t
for fusing
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
Low level value of threshold voltage
High level value of threshold voltage
Low level value of
on-state slope resistance
High level value of
on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
SWITCHING
PARAMETER
V
DRM
600 V
Maximum rate of rise V
DRM
800 V
of turned-on current V
DRM
1000 V
V
DRM
1600 V
Typical turn-on time
Typical reverse recovery time
Typical turn-off time
t
gt
t
rr
t
q
dI
F
/dt
SYMBOL
TEST CONDITIONS
T
J
= T
J
maximum, V
DM
= Rated V
DRM
Gate pulse = 20 V, 15
,
t
p
= 6 μs, t
r
= 0.1 μs maximum
I
TM
= (2 x rated dI/dt) A
T
J
= 25 °C, at rated V
DRM
/V
RRM
, T
J
= 125 °C
T
J
= T
J
maximum,
I
TM
= I
T(AV)
, t
p
> 200 μs, dI
F
/dt = - 10 A/μs
T
J
= T
J
maximum, I
TM
= I
T(AV)
, t
p
> 200 μs, V
R
= 100 V,
dI
F
/dt = - 10 A/μs, dV/dt = 20 V/μs linear to 67 % V
DRM
,
gate bias 0 V to 100 W
VALUES
200
180
160
150
0.9
4
μs
110
A/μs
UNITS
Note
• t
q
= 10 μs up to 600 V, t
q
= 30 μs up to 1600 V available on special request
BLOCKING
PARAMETER
Maximum critical rate of rise
of off-state voltage
SYMBOL
dV/dt
TEST CONDITIONS
T
J
= T
J
maximum linear to 100 % rated V
DRM
T
J
= T
J
maximum linear to 67 % rated V
DRM
VALUES
100
300
(1)
UNITS
V/μs
Note
(1)
Available with: dV/dt = 1000 V/μs, to complete code add S90 i.e. 10RIA120S90
Revision: 21-Sep-17
Document Number: 93689
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10RIA Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak negative gate voltage
DC gate current required to trigger
SYMBOL
P
GM
P
G(AV)
I
GM
-V
GM
I
GT
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= T
J
maximum
T
J
= -65 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= -65 °C
DC gate voltage required to trigger
DC gate current not to trigger
V
GT
I
GD
T
J
= 25 °C
T
J
= 125 °C
T
J
= T
J
maximum, V
DRM
= Rated value
T
J
= T
J
maximum,
V
DRM
= Rated value
Maximum gate current/voltage not
to trigger is the maximum value
which will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate trigger
current/voltage are the lowest value
which will trigger all units 6 V anode
to cathode applied
TEST CONDITIONS
VALUES
8.0
2.0
1.5
10
90
60
35
3.0
2.0
1.0
2.0
mA
V
mA
UNITS
W
A
V
DC gate voltage not to trigger
V
GD
0.2
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction and
storage temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heat sink
SYMBOL
T
J
, T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth, flat and greased
TO NUT
20 (27.5)
Mounting torque
Lubricated threads
(Non-lubricated threads)
0.23 (0.32)
2.3 (3.1)
Approximate weight
Case style
See dimensions - link at the end of datasheet
14
0.49
TO-48 (TO-208AA)
TEST CONDITIONS
VALUES
-65 to +125
1.85
K/W
0.35
TO DEVICE
25
0.29
2.8
lbf
in
kgf · m
N·m
g
oz.
UNITS
°C
R
thJC
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
0.44
0.53
0.68
1.01
1.71
RECTANGULAR CONDUCTION
0.32
0.56
0.75
1.05
1.73
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJC
when devices operate at different conduction angles than DC
Revision: 21-Sep-17
Document Number: 93689
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10RIA Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
Conduction Period
Maximum Allowable Case Temperature (°C)
130
120
110
100
90
80
70
60
50
40
0
2
4
10RIA Series
R
thJC
(DC) = 1.85 K/W
10RIA Series
R
thJC
(DC) = 1.85 K/W
Conduction Angle
30°
80
70
60
50
30°
60°
90°
120°
180°
DC
60°
90°
120°
180°
40
0
5
10
15
20
25
30
Average On-state Current (A)
6
8
10
12 14
16 18
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Maximum Average On-state Power Loss (W)
35
30
25
20
15
10
5
0
0
2
4
6
8
10 12
14 16
0
18
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
Conduction Angle
180°
120°
90°
60°
30°
RMS Limit
SA
R
th
2
K/
W
=
1
W
K/
3K
/W
4K
/W
ta
el
-D
R
5K
/W
7K
/W
10RIA Series
T
J
= 125°C
10 K
/W
Fig. 3 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
45
40
35
30
25
20
15
10
5
0
0
5
10
15
20
25
0
30
25
50
75
100
125
Average On-state Current (A)
Maximum Allowable Ambient Temperature (°C)
RMS Limit
Conduction Period
DC
180°
120°
90°
60°
30°
R
SA
th
=
1
2K
/W
3K
/W
4K
/W
5K
/W
7 K/
W
K/
W
-D
el
ta
R
10RIA Series
T
J
= 125°C
10 K/W
Fig. 4 - On-State Power Loss Characteristics
Revision: 21-Sep-17
Document Number: 93689
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-10RIA Series
www.vishay.com
Vishay Semiconductors
240
Peak Half Sine Wave On-state Current (A)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T
J
= 125°C
No Voltage Reapplied
Rated V
RRM
Reapplied
200
Peak Half Sine Wave On-state Current (A)
190
180
170
160
150
140
130
120
110
100
90
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
Initial T
J
= 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
220
200
180
160
140
120
100
10RIA Series
10
100
10RIA Series
80
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Instantaneous On-state Current (A)
1000
100
T
J
= 25°C
T
J
= 125°C
10
10R S
IA eries
1
0.5
1
1.5
2
2.5
3
3.5
4
Instantaneous On-state Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Transient Thermal Impedance Z
thJC
(K/W)
10
Steady State Value
R
thJC
= 1.85 K/W
(DC Operation)
1
10RIA Series
0.1
0.001
0.01
0.1
Square Wave Pulse Duration (s)
1
10
Fig. 8 - Thermal Impedance Z
thJC
Characteristics
Revision: 21-Sep-17
Document Number: 93689
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
