AUTOMOTIVE GRADE
Features
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
S
D
G
TO-220AB
AUIRF1010Z
AUIRF1010Z
AUIRF1010ZS
AUIRF1010ZL
V
DSS
R
DS(on)
max.
I
D (Silicon Limited)
I
D (Package Limited)
D
D
HEXFET
®
Power MOSFET
55V
7.5m
94A
75A
S
G
D
2
Pak
AUIRF1010ZS
G
S
D
TO-262
AUIRF1010ZL
G
Gate
D
Drain
S
Source
Base part number
AUIRF1010Z
AUIRF1010ZL
AUIRF1010ZS
Package Type
TO-220
TO-262
D
2
-Pak
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
Orderable Part Number
AUIRF1010Z
AUIRF1010ZL
AUIRF1010ZS
AUIRF1010ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
D
@ T
C
= 25°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
E
AS
(tested)
I
AR
E
AR
T
J
T
STG
Parameter
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
Continuous Drain Current, V
GS
@ 10V (Package Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
Repetitive Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Max.
94
66
75
360
140
0.90
± 20
130
180
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
mJ
A
mJ
°C
Thermal Resistance
Symbol
R
JC
R
CS
R
JA
R
JA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient ( PCB Mount, steady state)
Typ.
–––
0.50
–––
Max.
1.11
–––
62
40
Units
°C/W
HEXFET® is a registered trademark of Infineon.
*Qualification
standards can be found at
www.infineon.com
1
2017-09-18
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V
(BR)DSS
V
(BR)DSS
/T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
gfs
Forward Trans conductance
I
DSS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
AUIRF1010Z/S/L
Min. Typ. Max. Units
Conditions
55
––– –––
V V
GS
= 0V, I
D
= 250µA
––– 0.049 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
5.8
7.5
m V
GS
= 10V, I
D
= 75A
2.0
–––
4.0
V V
DS
= V
GS
, I
D
= 250µA
33
––– –––
S V
DS
= 25V, I
D
= 75A
––– –––
20
V
DS
= 55 V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 55V,V
GS
= 0V,T
J
=125°C
––– ––– 200
V
GS
= 20V
nA
––– ––– -200
V
GS
= -20V
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min.
–––
–––
–––
–––
–––
63
19
24
18
150
36
92
4.5
7.5
2840
420
250
1630
360
560
95
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
I
D
= 75A
nC
V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
ns
R
G
= 6.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
nH
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
pF
V
GS
= 0V, V
DS
= 1.0V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 44V ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
Conditions
MOSFET symbol
showing the
A
integral reverse
p-n junction diode.
V T
J
= 25°C,I
S
= 75A,V
GS
= 0V
ns T
J
= 25°C ,I
F
= 75A, V
DD
= 25V
nC di/dt = 100A/µs
Dynamic Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
Effective Output Capacitance
C
oss eff.
Diode Characteristics
Parameter
Continuous Source Current
I
S
(Body Diode)
Pulsed Source Current
I
SM
(Body Diode)
V
SD
Diode Forward Voltage
Reverse Recovery Time
t
rr
Q
rr
Reverse Recovery Charge
t
on
Forward Turn-On Time
Notes:
Typ. Max. Units
–––
–––
–––
22
15
75
360
1.3
33
23
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)
Limited by T
Jmax,
starting T
J
= 25°C, L = 0.05mH, R
G
= 25, I
AS
= 75A, V
GS
=10V. Part not recommended for use above this value.
Pulse width
1.0ms;
duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance.
This value determined from sample failure population, starting T
J
= 25°C, L = 0.05mH, R
G
= 25, I
AS
= 75A, V
GS
=10V.
This is only applied to TO-220AB package.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994
R
is measured at T
J
approximately 90°C.
2
2017-09-18
AUIRF1010Z/S/L
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
10
4.5V
1
0.1
1
20µs PULSE WIDTH
Tj = 25°C
10
100
4.5V
10
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig. 1
Typical Output Characteristics
Fig. 2
Typical Output Characteristics
1000
100
ID , Drain-to-Source Current
A)
T J = 25°C
T J = 175°C
Gfs, Forward Transconductance (S)
80
T J = 175°C
100
60
T J = 25°C
40
10
20
VDS = 10V
20µs PULSE WIDTH
0
0
20
40
60
80
1
4.0
5.0
6.0
7.0
VDS = 25V
20µs PULSE WIDTH
8.0
9.0
10.0
11.0
VGS, Gate-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
Fig. 3
Typical Transfer Characteristics
Fig. 4
Typical Forward Trans conductance
vs. Drain Current
2017-09-18
3
AUIRF1010Z/S/L
5000
4000
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
20
ID= 75A
VDS = 44V
VDS= 28V
16
C, Capacitance (pF)
3000
Ciss
12
2000
8
1000
Coss
Crss
4
0
1
10
100
0
0
20
40
60
80
100
VDS, Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
1000.0
10000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100.0
T J = 175°C
100
100µsec
10
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
10
10msec
10.0
T J = 25°C
1.0
0.1
0.2
0.6
1.0
1.4
VGS = 0V
1.8
0.1
100
1000
VSD , Source-toDrain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig. 7
Typical Source-to-Drain Diode
Forward Voltage
4
Fig 8.
Maximum Safe Operating Area
2017-09-18
AUIRF1010Z/S/L
100
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.5
LIMITED BY PACKAGE
80
ID , Drain Current (A)
ID = 75A
2.0
VGS = 10V
60
1.5
40
20
1.0
0
25
50
75
100
125
150
175
T C , Case Temperature (°C)
0.5
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
T J , Junction Temperature (°C)
Fig 9.
Maximum Drain Current vs. Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
10
Thermal Response ( Z thJC )
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
t1 , Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2017-09-18
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