AS6C4016A-45ZIN: 产品描述SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM; 产品类别存储; 文件大小2MB，共12页; 制造商Alliance Memory; 标准

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AS6C4016A-45ZIN概述

SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM

AS6C4016A-45ZIN规格参数

参数名称	属性值
Product Attribute	Attribute Value
制造商 Manufacturer	Alliance Memory
产品种类 Product Category	SRAM
RoHS	Details
Memory Size	4 Mbit
Organization	256 k x 16
Access Time	45 ns
接口类型 Interface Type	Parallel
电源电压-最大 Supply Voltage - Max	3.6 V
电源电压-最小 Supply Voltage - Min	2.7 V
Supply Current - Max	30 mA
最小工作温度 Minimum Operating Temperature	- 40 C
最大工作温度 Maximum Operating Temperature	+ 85 C
安装风格 Mounting Style	SMD/SMT
封装 / 箱体 Package / Case	TSOP II-44
系列 Packaging	Tray
Memory Type	SDR
类型 Type	Asynchronous
Moisture Sensitive	Yes
工厂包装数量 Factory Pack Quantity	135

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January 2011

256K X 16 BIT LOW POWER CMOS SRAM

FEATURES

Process Technology : 0.18μm Full CMOS

Organization : 256K x 16 bit

Power Supply Voltage : 2.7V ~ 3.6V

Low Data Retention Voltage : 1.5V(Min.)

Three state output and TTL Compatible

Package Type : VFBGA-48, 44-TSOP2

AS6C4016A

GENERAL DESCRIPTION

The AS6C4016A families are fabricated by Alliance Memory

advanced full CMOS process technology. The families support

industrial temperature range and Chip Scale Package for user

flexibility of system design. The families also support low data

retention voltage for battery back-up operation with low data

retention current.

PRODUCT FAMILY

Product Family

Operating

Temperature

Industrial

(-40 ~ 85°C)

Vcc Range

Speed

Power Dissipation

Standby

Operating

(

SB1

, Typ.)

(

SB1

.Max.)

0.25

μA

PKG Type

KGD

VFBGA-48

44-TSOP2

AS6C4016A

2.7 ~ 3.6V

45 ns

3 mA

Typical values are measured at Vcc=3.3V, TA=25°C and not 100% tested.

Alliance Memory Inc.

Page 1 of 12

AS6C4016A-45ZIN相似产品对比

	AS6C4016A-45ZIN	AS6C4016A-55ZIN	AS6C4016A-55ZINTR	AS6C4016A-55BINTR	AS6C4016A-45BIN	AS6C4016A-45ZINTR	AS6C4016A-55BIN
描述	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 2.7-5.5V, 55ns 256K x 16 Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	SRAM 4M, 3V, 45ns 256Kx16 LP Asyn SRAM	IC SRAM 4M PARALLEL 48TFBGA
Product Attribute	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	Attribute Value	-
制造商 Manufacturer	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	Alliance Memory	-
产品种类 Product Category	SRAM	SRAM	SRAM	SRAM	SRAM	SRAM	-
RoHS	Details	Details	Details	Details	Details	Details	-
Memory Size	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit	4 Mbit	-
Organization	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16	256 k x 16	-
Access Time	45 ns	55 ns	55 ns	55 ns	45 ns	45 ns	-
接口类型 Interface Type	Parallel	Parallel	Parallel	Parallel	Parallel	Parallel	-
电源电压-最大 Supply Voltage - Max	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V	-
电源电压-最小 Supply Voltage - Min	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	2.7 V	-
Supply Current - Max	30 mA	30 mA	30 mA	30 mA	30 mA	30 mA	-
最小工作温度 Minimum Operating Temperature	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	- 40 C	-
最大工作温度 Maximum Operating Temperature	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	+ 85 C	-
安装风格 Mounting Style	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	SMD/SMT	-
封装 / 箱体 Package / Case	TSOP II-44	TSOP II-44	TSOP II-44	TSOP-44	VFBGA-48	TSOP II-44	-
系列 Packaging	Tray	Tray	Reel	Reel	Tray	Reel	-
Memory Type	SDR	SDR	SDR	SDR	SDR	SDR	-
类型 Type	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	Asynchronous	-
Moisture Sensitive	Yes	Yes	Yes	Yes	Yes	Yes	-
工厂包装数量 Factory Pack Quantity	135	135	1000	2000	480	1000	-

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