SGC4563Z
SGC4563Z
50MHz to 4000MHz ACTIVE BIAS SILICON
GERMANIUM CASCADABLE GAIN BLOCK
Package: SOT-363
Product Description
RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utiliz-
ing a Darlington configuration with a patented active bias network. The
active bias network provides stable current over temperature and process
Beta variations. Designed to run directly from a 3V supply, the SGC4563Z
does not require a dropping resistor as compared to typical Darlington
amplifiers. The SGC4563Z is designed for high linearity 3V gain block
applications that require small size and minimal external components. It is
internally matched to 50.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
dB
10
Bias Tee Data, ZS = ZL = 50 Ohms, TL = 25C
Features
Single Fixed 3V Supply
No Dropping Resistor
Required
Patented Self-Bias Circuitry
P
1dB
=15.6dBm at 1950MHz
OIP
3
=28.5dBm at 1950MHz
Robust 1000V ESD, Class 1C
HBM
PA Driver Amplifier
Cellular, PCS, GSM, UMTS,
WCDMA
IF Amplifier
Wireless Data, Satellite
Gain and RL versus Frequency
30
20
S21
Applications
S22
0
-10
-20
-30
-40
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
S11
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
Gain
IRL
ORL
Frequency (GHz)
Parameter
Small Signal Gain
Min.
22.5
18.5
Specification
Typ.
Max.
Unit
Condition
26.5
dB
Freq=500MHz
25.5
28.5
dB
Freq=*850MHz
20.5
22.5
dB
Freq=1950MHz
Output Power at 1dB Compression
16.8
dBm
Freq=500MHz
16.5
dBm
Freq=850MHz
14.0
15.6
dBm
Freq=1950MHz
Output Third Order Intercept Point
29.5
dBm
Freq=500MHz
29.5
dBm
Freq=850MHz
26.0
28.5
dBm
Freq=1950MHz
Input Return Loss
14.0
18.0
dB
Freq=1950MHz
Output Return Loss
10.0
14.0
dB
Freq=1950MHz
Noise Figure
1.7
3.0
dB
Freq=1930MHz
Device Operating Voltage
3
V
Device Operating Current
37
48
59
mA
Thermal Resistance
120
°C/W
(R
TH
, j-l) Junction to lead
Test Conditions: V
D
=3.0V, I
D
=48mA, T
L
=25°C, OIP3 Tone Spacing=1MHz. *Bias Tee Data, Z
S
=Z
L
=50P
OUT
per tone=0dBm, Application Circuit Data
Unless Otherwise Noted
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS140527
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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SGC4563Z
Absolute Maximum Ratings
Parameter
Max Device Current (I
CE
)
Max Device Voltage (V
CE
)
Max RF Input Power* (See Note)
Max Junction Temp (T
J
)
Operating Temp Range (T
L
)
Max Storage Temp
ESD Rating - Human Body Model
(HBM)
Moisture Sensitivity Level
*Note: Load condition 1, Z
L
=50;
Rating
110
4
12
+150
-55 to +105
+150
Class 1C
MSL 1
Unit
mA
V
dBm
°C
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Load condition 2, Z
L
=10:1 VSWR
Operation of this device beyond any one of these limits may cause permanent
damage. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
I
D
V
D
<(T
J
-T
L
)/R
TH
, j-l and T
L
=Source Lead Temperature
Typical RF Performance with Application Circuit at Key Operating Frequencies (Bias Tee)
Parameter
Unit
dB
dBm
dBm
dB
dB
dB
dB
*100
MHz
27.5
30.5
16.9
23.0
26.5
28.5
1.3
500
MHz
26.5
29.5
16.8
18.5
19.5
29.0
1.6
850
MHz
25.5
29.5
16.5
29.5
20.5
28.5
1.7
1950
MHz
20.5
28.5
15.6
18.0
14.0
23.5
1.7
*2500
MHz
18.5
25.5
14.0
14.0
12.0
22.5
1.6
*3500
MHz
15.0
22.5
11.6
17.0
9.5
20.0
2.1
Small Signal Gain (G)
Output Third Order Intercept Point (OIP
3
)
Output Power at 1dB Compression (P
1dB
)
Input Return Loss (IRL)
Output Return Loss (ORL)
Reverse Isolation (S
12
)
Noise Figure (NF)
Test Conditions: V
D
=3V, I
D
=48mA, OIP
3
Tone Spacing=1MHz, P
OUT
per tone=0dBm
T
L
=25°C, Z
S
=Z
L
=50, *Bias Tee Data
Typical Performance with Bias Tee, V
D
=3V, I
D
=48mA
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
-40°C
25°C
85°C
P1dB versus Frequency
20
32
30
28
26
24
22
20
0.0
0.5
18
-40°C
25°C
85°C
P1dB (dBm)
1.0
1.5
2.0
2.5
3.0
3.5
OIP3 (dBm)
16
14
12
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
2 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140527
SGC4563Z
Typical Performance with Bias Tee, V
D
=3V, I
D
=48mA
Noise Figure versus Frequency/Temperature
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
80
120
100
DCIV versus Temperature
Noise Figure (dB)
I
D
(mA)
60
40
25°C
85°C
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-40°C
25°C
85°C
3.5
4.0
Frequency (GHz)
V
CE
(V)
S11 versus Frequency
0
-5
-10
30
S21 versus Frequency
25°C
-40°C
85°C
-40°C
25°C
85°C
28
26
Gain (dB)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
S11 (dB)
24
22
20
18
-15
-20
-25
-30
16
14
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Frequency (GHz)
Frequency (GHz)
S12 versus Frequency
0
-5
-10
0
-5
-10
S22 versus Frequency
S12 (dB)
-15
-20
-25
-30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
S22 (dB)
-15
-20
-40°C
25°C
85°C
-25
-30
0.0
0.5
1.0
1.5
2.0
2.5
-40°C
25°C
85°C
3.0
3.5
Frequency (GHz)
Frequency (GHz)
DS140527
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
3 of 10
SGC4563Z
Typical Performance with 0.5GHz to 1GHz Application Circuit, V
D
=3V, I
D
=48mA
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
P1dB versus Frequency
20
35
33
18
P1dB (dBm)
OIP3 (dBm)
31
16
29
14
27
-40°C
25°C
85°C
0.3
0.5
0.7
0.9
1.1
12
-40°C
25°C
85°C
0.3
0.5
0.7
0.9
1.1
25
10
Frequency (GHz)
Frequency (GHz)
P
OUT
vs P
IN
@ 850MHz
19
17
15
13
11
9
7
5
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
75
70
2.5
65
60
55
3.0
Noise Figure versus Frequency/Temperature
Power Out (dBm)
Noise Figure (dB)
Bias (mA)
2.0
1.5
1.0
0.5
0.0
0.3
0.5
0.7
0.9
1.1
Pout_25°C
Pout_-40°C
Pout_85°C
Bias_25°C
Bias_-40°C
Bias_85°C
50
45
40
25°C
85°C
Power In (dBm)
Frequency (GHz)
S11 versus Frequency
0
-5
-10
30
S21 versus Frequency
-40°C
25°C
85°C
28
26
Gain (dB)
S11 (dB)
24
22
20
18
-15
-20
-25
-30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
16
14
0.0
0.2
0.4
0.6
0.8
1.0
-40°C
25°C
85°C
1.2
Frequency (GHz)
Frequency (GHz)
4 of 10
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS140527
SGC4563Z
Typical Performance with 0.5GHz to 1GHz Application Circuit, V
D
=3V, I
D
=48mA
S12 versus Frequency
0
-5
-10
-15
-20
-25
-30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
S22 versus Frequency
-40°C
25°C
85°C
-5
-10
S22 (dB)
S12 (dB)
-15
-20
-25
-30
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-40°C
25°C
85°C
Frequency (GHz)
Frequency (GHz)
Typical Performance with 1.7GHz to 2.2GHz Application Circuit, V
D
=3V, I
D
=48mA
Noise Figure versus Frequency
3.0
2.5
34
OIP3 versus Frequency
(0dBm/tone, 1MHz spacing)
-40°C
25°C
85°C
32
Noise Figure (dB)
OIP3 (dBm)
25°C
85°C
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.0
1.5
1.0
0.5
0.0
30
28
26
24
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
Frequency (GHz)
Frequency (GHz)
P
OUT
vs P
IN
@ 2140MHz
17
15
13
80
P1dB versus Frequency
20
Power Out (dBm)
Pout_25°C
Pout_-40°C
Pout_85°C
Bias_25°C
Bias_-40°C
Bias_85°C
75
70
18
P1dB (dBm)
Bias (mA)
11
9
7
5
3
1
-20
-18
-16
-14
-12
-10
-8
-6
-4
-2
65
60
55
50
16
14
12
45
40
10
0.8
1.0
1.2
1.4
1.6
1.8
-40°C
25°C
85°C
2.0
2.2
Power In (dBm)
Frequency (GHz)
DS140527
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
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