19-3502; Rev 5; 5/07
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
General Description
The MAX5062/MAX5063/MAX5064 high-frequency,
125V half-bridge, n-channel MOSFET drivers drive high-
and low-side MOSFETs in high-voltage applications.
These drivers are independently controlled and their
35ns typical propagation delay, from input to output, are
matched to within 3ns (typ). The high-voltage operation
with very low and matched propagation delay between
drivers, and high source/sink current capabilities in a
thermally enhanced package make these devices suit-
able for the high-power, high-frequency telecom power
converters. The 125V maximum input voltage range pro-
vides plenty of margin over the 100V input transient
requirement of telecom standards. A reliable on-chip
bootstrap diode connected between V
DD
and BST elimi-
nates the need for an external discrete diode.
The MAX5062A/C and the MAX5063A/C offer both nonin-
verting drivers (see the
Selector Guide).
The
MAX5062B/D and the MAX5063B/D offer a noninverting
high-side driver and an inverting low-side driver. The
MAX5064A/B offer two inputs per driver that can be
either inverting or noninverting. The MAX5062A/B/C/D
and the MAX5064A feature CMOS (V
DD
/ 2) logic inputs.
The MAX5063A/B/C/D and the MAX5064B feature TTL
logic inputs. The MAX5064A/B include a break-before-
make adjustment input that sets the dead time between
drivers from 16ns to 95ns. The drivers are available in the
industry-standard 8-pin SO footprint and pin configura-
tion, and a thermally enhanced 8-pin SO and 12-pin
(4mm x 4mm) thin QFN packages. All devices operate
over the -40°C to +125°C automotive temperature range.
Features
♦
HIP2100/HIP2101 Pin Compatible (MAX5062A/
MAX5063A)
♦
Up to 125V Input Operation
♦
8V to 12.6V V
DD
Input Voltage Range
♦
2A Peak Source and Sink Current Drive Capability
♦
35ns Typical Propagation Delay
♦
Guaranteed 8ns Propagation Delay Matching
Between Drivers
♦
Programmable Break-Before-Make Timing
(MAX5064)
♦
Up to 1MHz Combined Switching Frequency while
Driving 100nC Gate Charge (MAX5064)
♦
Available in CMOS (V
DD
/ 2) or TTL Logic-Level
Inputs with Hysteresis
♦
Up to 15V Logic Inputs Independent of Input
Voltage
♦
Low 2.5pF Input Capacitance
♦
Instant Turn-Off of Drivers During Fault or PWM
Start-Stop Synchronization (MAX5064)
♦
Low 200µA Supply Current
♦
Versions Available With Combination of
Noninverting and Inverting Drivers (MAX5062B/D
and MAX5063B/D)
♦
Available in 8-Pin SO, Thermally Enhanced SO,
and 12-Pin Thin QFN Packages
MAX5062/MAX5063/MAX5064
Ordering Information
PART
TEMP RANGE
PIN-
TOP
PKG
PACKAGE MARK CODE
—
—
—
—
S8-5
S8-5
S8E-14
S8E-14
Applications
Telecom Half-Bridge Power Supplies
Two-Switch Forward Converters
Full-Bridge Converters
Active-Clamp Forward Converters
Power-Supply Modules
Motor Control
MAX5062AASA
-40°C to +125°C 8 SO
MAX5062BASA -40°C to +125°C 8 SO
MAX5062CASA -40°C to +125°C 8 SO-EP*
MAX5062DASA -40°C to +125°C 8 SO-EP*
*EP
= Exposed paddle.
Devices are available in both leaded and lead-free packaging.
Specify lead-free by replacing “-T” with “+T” when ordering.
Ordering Information continued at end of data sheet.
Selector Guide
PART
MAX5062AASA
MAX5062BASA
MAX5062CASA
MAX5062DASA
HIGH-SIDE DRIVER
Noninverting
Noninverting
Noninverting
Noninverting
LOW-SIDE DRIVER
Noninverting
Inverting
Noninverting
Inverting
LOGIC LEVELS
CMOS (V
DD
/ 2)
CMOS (V
DD
/ 2)
CMOS (V
DD
/ 2)
CMOS (V
DD
/ 2)
PIN COMPATIBLE
HIP 2100IB
—
—
—
Selector Guide continued at end of data sheet.
________________________________________________________________
Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX5062/MAX5063/MAX5064
ABSOLUTE MAXIMUM RATINGS
(All voltages referenced to GND, unless otherwise noted.)
V
DD
, IN_H, IN_L, IN_L+, IN_L-, IN_H+, IN_H-........-0.3V to +15V
DL, BBM .....................................................-0.3V to (V
DD
+ 0.3V)
HS............................................................................-5V to +130V
DH to HS.....................................................-0.3V to (V
DD
+ 0.3V)
BST to HS ...............................................................-0.3V to +15V
AGND to PGND (MAX5064) ..................................-0.3V to +0.3V
dV/dt at HS ........................................................................50V/ns
Continuous Power Dissipation (T
A
= +70°C)
8-Pin SO (derate 5.9mW/°C above +70°C)...............470.6mW
8-Pin SO with Exposed Pad (derate 19.2mW/°C
above +70°C)* ....................................................1538.5mW
12-Pin Thin QFN (derate 24.4mW/°C
above +70°C)* ....................................................1951.2mW
Maximum Junction Temperature .....................................+150°C
Operating Temperature Range .........................-40°C to +125°C
Storage Temperature Range .............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
*Per JEDEC 51 standard multilayer board.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
POWER SUPPLIES
Operating Supply Voltage
V
DD
(Note 2)
IN_H = IN_L = GND
(no switching)
MAX5062_/
MAX5063_
MAX5064_
V
DD
Operating Supply Current
BST Quiescent Supply Current
BST Operating Supply Current
UVLO (V
DD
to GND)
UVLO (BST to HS)
UVLO Hysteresis
LOGIC INPUT
Input-Logic High
V
IH_
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
MAX5063_/MAX5064B, TTL version
Input-Logic Low
V
IL_
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
MAX5063_/MAX5064B, TTL version
Logic-Input Hysteresis
V
HYS
MAX5062_/MAX5064A,
CMOS (V
DD
/ 2) version
MAX5063_/MAX5064B, TTL version
0.67 x
V
DD
2
0.55 x
V
DD
1.65
0.4 x
V
DD
1.4
1.6
0.25
0.33 x
V
DD
0.8
V
V
V
I
DDO
I
BST
I
BSTO
UVLO
VDD
UVLO
BST
f
SW
= 500kHz, V
DD
= +12V
IN_H = IN_L = GND (no switching)
f
SW
= 500kHz, V
DD
= V
BST
= +12V
V
DD
rising
BST rising
6.5
6.0
7.3
6.9
0.5
15
8.0
70
120
12.6
140
µA
260
3
40
3
8.0
7.8
mA
µA
mA
V
V
V
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
DD
Quiescent Supply Current
I
DD
2
_______________________________________________________________________________________
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
CONDITIONS
V
IN_H+
, V
IN_L+
= 0V
Logic-Input Current
I_IN
V
IN_L
= V
DD
for MAX5062B/D, MAX5063B/D
V
IN_H-
, V
IN_L-
, V
IN_H
= V
DD
V
IN_L
= 0V for MAX5062A/C, MAX5063A/C
IN_H+, IN_L+ IN_H, to GND
Input Resistance
R
IN
IN_L to V
DD
for MAX5062B/D,
MAX5063B/D
IN_H-, IN_L-, IN_H, to V
DD
IN_L for MAX5062A/C, MAX5063A/C to GND
Input Capacitance
HIGH-SIDE GATE DRIVER
HS Maximum Voltage
BST Maximum Voltage
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
DH Reverse Current (Latchup
Protection)
Power-Off Pulldown Clamp
Voltage
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
LOW-SIDE GATE DRIVER
Driver Output Resistance
(Sourcing)
Driver Output Resistance
(Sinking)
Reverse Current at DL (Latchup
Protection)
Power-Off Pulldown Clamp
Voltage
Peak Output Current (Sourcing)
Peak Output Current (Sinking)
INTERNAL BOOTSTRAP DIODE
Forward Voltage Drop
Turn-On and Turn-Off Time
V
f
t
R
I
BST
= 100mA
I
BST
= 100mA
0.91
40
1.11
V
ns
I
PK_LP
I
PK_LN
R
ON_LP
R
ON_LN
V
DD
= 12V, I
DL
= 100mA
(sourcing)
V
DD
= 12V, I
DL
= 100mA
(sinking)
(Note 3)
V
DD
= 0V or floating, I
DL
= 1mA (sinking)
C
L
= 10nF, V
DL
= 0V
C
L
= 10nF, V
DL
= 12V
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
400
0.95
2
2
1.16
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
Ω
Ω
mA
V
A
A
I
DH_PEAK
V
HS_MAX
V
BST_MAX
R
ON_HP
R
ON_HN
V
DD
= 12V, I
DH
= 100mA
(sourcing)
V
DD
= 12V, I
DH
= 100mA
(sinking)
(Note 3)
V
BST
= 0V or floating, I
DH
= 1mA (sinking)
C
L
= 10nF, V
DH
= 0V
C
L
= 10nF, V
DH
= 12V
T
A
= +25°C
T
A
= +125°C
T
A
= +25°C
T
A
= +125°C
400
0.94
2
2
1.16
125
140
2.5
3.5
2.1
3.2
3.3
4.6
2.8
4.2
V
V
Ω
Ω
mA
V
A
A
C
IN
2.5
pF
1
MΩ
-1
0.001
+1
µA
MIN
TYP
MAX
UNITS
MAX5062/MAX5063/MAX5064
_______________________________________________________________________________________
3
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX5062/MAX5063/MAX5064
ELECTRICAL CHARACTERISTICS (continued)
(V
DD
= V
BST
= +8V to +12.6V, V
HS
= GND = 0V, BBM = open, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at
V
DD
= V
BST
= +12V and T
A
= +25°C.) (Note 1)
PARAMETER
SYMBOL
C
L
= 1000pF
Rise Time
t
R
C
L
= 5000pF
C
L
= 10,000pF
C
L
= 1000pF
Fall Time
t
F
C
L
= 5000pF
C
L
= 10,000pF
Turn-On Propagation Delay Time
Turn-Off Propagation Delay Time
Delay Matching Between
Inverting Input to Output and
Noninverting Input to Output
Delay Matching Between Driver-
Low and Driver-High
Break-Before-Make Accuracy
(MAX5064 Only)
Internal Nonoverlap
Minimum Pulse-Width Input Logic
(High or Low) (Note 5)
t
PW-MIN
V
DD
= V
BST
= 12V
V
DD
= V
BST
= 8V
t
D_ON
t
D_OFF
Figure 1, C
L
= 1000pF
(Note 3)
Figure 1, C
L
= 1000pF
(Note 3)
CMOS
TTL
CMOS
TTL
CONDITIONS
MIN
TYP
7
33
65
7
33
65
30
35
30
35
2
55
63
55
63
8
ns
ns
ns
ns
MAX
UNITS
SWITCHING CHARACTERISTICS FOR HIGH- AND LOW-SIDE DRIVERS (V
DD
= V
BST
= +12V)
t
MATCH1
C
L
= 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
C
L
= 1000pF, BBM open for MAX5064,
Figure 1 (Note 3)
R
BBM
= 10kΩ
R
BBM
= 47kΩ (Notes 3, 4)
R
BBM
= 100kΩ
40
ns
t
MATCH2
2
16
56
95
1
135
170
8
ns
72
ns
ns
ns
Note 1:
Note 2:
Note 3:
Note 4:
Note 5:
All devices are 100% tested at T
A
= +125°C. Limits over temperature are guaranteed by design.
Ensure that the V
DD
-to-GND or BST-to-HS voltage does not exceed 13.2V.
Guaranteed by design, not production tested.
Break-before-make time is calculated by t
BBM
= 8ns x (1 + R
BBM
/ 10kΩ).
See the
Minimum Pulse Width
section.
4
_______________________________________________________________________________________
125V/2A, High-Speed,
Half-Bridge MOSFET Drivers
MAX5062/MAX5063/MAX5064
Typical Operating Characteristics
(Typical values are at V
DD
= V
BST
= +12V and T
A
= +25°C, unless otherwise specified.)
UNDERVOLTAGE LOCKOUT
(V
DD
AND V
BST
RISING) vs. TEMPERATURE
MAX5062/3/4 toc01
V
DD
AND BST UNDERVOLTAGE LOCKOUT
HYSTERESIS vs. TEMPERATURE
MAX5062/3/4 toc02
I
DD
vs. V
DD
MAX5062/3/4 toc03
7.5
7.4
7.3
7.2
UVLO (V)
7.1
7.0
6.9
6.8
6.7
6.6
6.5
UVLO
BST
UVLO
VDD
1.0
0.9
0.8
UVLO HYSTERESIS (V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
UVLO
VDD
HYSTERESIS
UVLO
BST
HYSTERESIS
MAX5064
IN_L-, IN_H- = V
DD
IN_L+, IN_H+ = GND
2V/div
V
DD
0V
500µA/div
0A
I
DD
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
-40 -25 -10 5 20 35 50 65 80 95 110 125
TEMPERATURE (°C)
40µs/div
I
DDO
+ I
BSTO
vs. V
DD
(f
SW
= 250kHz)
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
MAX5062/3/4 toc04
INTERNAL BST DIODE
(I-V) CHARACTERISTICS
180
160
140
I
DIODE
(mA)
120
100
80
60
40
20
0
T
A
= +125°C
T
A
= +25°C
T
A
= 0°C
T
A
= -40°C
MAX5062/3/4 toc05
200
I
DDO
+ I
BSTO
(mA)
0 1 2 3 4 5 6 7 8 9 10 11 12 13
V
DD
(V)
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V
DD
- V
BST
(V)
V
DD
QUIESCENT CURRENT
vs. V
DD
(NO SWITCHING)
MAX5062/3/4 toc06
BST QUIESCENT CURRENT
vs. BST VOLTAGE
18
15
I
BST
(µA)
12
9
6
3
T
A
= -40°C, T
A
= 0°C, T
A
= +25°C
0
T
A
= +125°C
V
BST
= V
DD
+ 1V,
NO SWITCHING
MAX5062/3/4 toc07
160
MAX5064
140
120
100
I
DD
(µA)
80
60
T
A
= -40°C
40
20
0
T
A
= +25°C, T
A
= 0°C
T
A
= +125°C
21
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
DD
(V)
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V
BST
(V)
_______________________________________________________________________________________
5
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