1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
Standard Avalanche Sinterglass Diode
FEATURES
• Glass passivated junction
• Hermetically
envelope
sealed
axial-leaded
glass
• Controlled avalanche characteristics
• Low reverse current
• High surge current loading
949539
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
MECHANICAL DATA
Case:
SOD-57
Terminals:
plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity:
color band denotes cathode end
Mounting position:
any
Weight:
approx. 369 mg
APPLICATIONS
• Rectification diode, general purpose
ORDERING INFORMATION
(Example)
DEVICE NAME
1N5062
1N5062
ORDERING CODE
1N5062TR
1N5062TAP
TAPED UNITS
5000 per 10" tape and reel
5000 per ammopack
MINIMUM ORDER QUANTITY
25 000
25 000
PARTS TABLE
PART
1N5059
1N5060
1N5061
1N5062
TYPE DIFFERENTIATION
V
R
= 200 V; I
F(AV)
= 2 A
V
R
= 400 V; I
F(AV)
= 2 A
V
R
= 600 V; I
F(AV)
= 2 A
V
R
= 800 V; I
F(AV)
= 2 A
PACKAGE
SOD-57
SOD-57
SOD-57
SOD-57
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Reverse voltage = repetitive peak reverse
voltage
Peak forward surge current
Average forward current
Pulse energy in avalanche mode, non
repetitive (inductive load switch off)
Junction and storage temperature range
TEST CONDITION
PART
1N5059
See electrical characteristics
1N5060
1N5061
1N5062
t
p
= 10 ms, half sine wave
T
thJA
= 45 K/W, T
amb
= 50 °C
T
thJA
= 100 K/W, T
amb
= 75 °C
I
(BR)R
= 1 A, inductive load
SYMBOL
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
V
R
= V
RRM
I
FSM
I
F(AV)
I
F(AV)
E
R
T
j
= T
stg
VALUE
200
400
600
800
50
2
0.8
20
- 55 to + 175
UNIT
V
V
V
V
A
A
A
mJ
°C
MAXIMUM THERMAL RESISTANCE
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
TEST CONDITION
Lead length l = 10 mm, T
L
= constant
On PC board with spacing 25 mm
SYMBOL
R
thJA
R
thJA
VALUE
45
100
UNIT
K/W
K/W
Rev. 1.7, 12-Sep-12
Document Number: 86000
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS
(T
amb
= 25 °C, unless otherwise specified)
PARAMETER
Forward voltage
TEST CONDITION
I
F
= 1 A
I
F
= 2.5 A
V
R
= V
RRM
Reverse current
V
R
= V
RRM
, T
j
= 100 °C
V
R
= V
RRM
, T
j
= 150 °C
1N5059
Breakdown voltage
I
R
= 100 μA
1N5060
1N5061
1N5062
Diode capacitance
Reverse recovery time
V
R
= 0 V, f = 1 MHz
I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A
PART
SYMBOL
V
F
V
F
I
R
I
R
I
R
V
(BR)R
V
(BR)R
V
(BR)R
V
(BR)R
C
D
t
rr
MIN.
-
-
-
-
-
225
450
650
900
-
-
TYP.
-
-
-
-
-
-
-
-
-
40
-
MAX
1
1.15
1
10
100
1600
1600
1600
1600
-
4
UNIT
V
V
μA
μA
μA
V
V
V
V
pF
μs
TYPICAL CHARACTERISTICS
(T
amb
= 25
C,
unless otherwise specified)
P - Reverse Power Dissipation ( mW )
R
200
V
R
= V
RRM
160
120
80
40
0
25
R
thJA
=
45 K/W
100 K/W
160 K/W
1N5060
1N5059
1N5062
I
FAV
- Average Forward Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50
75
100
125
150
175
15763_1
V
R
= V
RRM
half sinewave
R
thJA
= 45 K/W
l =10 mm
1N5061
R
thJA
= 100 K/W
PCB: d = 25 mm
0
20
40
60
80 100 120 140 160 180
15764
T
j
- Junction Temperature (
°C
)
T
amb
- Ambient Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1000
I
R
- Reverse Current (
µA
)
V
R
= V
RRM
100
100
I
F
- Forward Current ( A )
10
1
0.1
0.01
0.001
0
T
j
= 175
°C
T
j
= 25°C
10
1
0.1
25
15765
50
75
100
125
150
175
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0
V
F
- Forward Voltage ( V )
T
j
- Junction Temperature (
°C
)
15762
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Fig. 4 - Max. Forward Current vs. Forward Voltage
Rev. 1.7, 12-Sep-12
Document Number: 86000
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5059, 1N5060, 1N5061, 1N5062
www.vishay.com
Vishay Semiconductors
50
C
D
- Diode Capacitance ( pF )
f =1 MHz
40
30
20
10
0
0.1
15766
1
10
100
V
R
- Reverse Voltage ( V )
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS
in millimeters (inches):
SOD-57
0.82 (0.032) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
Rev. 1.7, 12-Sep-12
Document Number: 86000
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
3.6 (0.142) max.
20543
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000
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